Bc817-40 Bc817-40r13 Bipolar (BJT) Transistor NPN 45 V 800 Ma 100MHz 310 MW SMD Sot-23-3 (TO-236) Bc817 Series

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Price

Purchase Qty. Reference FOB Price

1-9 Pieces US$1.00

10-99 Pieces US$0.10

100+ Pieces US$0.01

Sepcifications

  • Certification RoHS, CE
  • Function NPN
  • Transport Package Standard
  • Specification Standard
  • Origin Original
  • Fet Typecurrent - Collector (IC) (Max) 800 Ma
  • Voltage - Collector Emitter Breakdown (M 45 V
  • Vce Saturation (Max) @ Ib, IC 700mv @ 50mA, 500mA
  • Current - Collector Cutoff (Max) 100na (Icbo)
  • DC Current Gain (Hfe) (Min) @ IC, Vce 250 @ 100mA, 1V
  • Power - Max 310 MW
  • Operating Temperature -55°c ~ 150°c (Tj)
  • Mounting Type Surface Mount
  • Package / Case to-236-3, Sc-59, Sot-23-3
  • Supplier Device Package Sot-23-3 (to-236)
  • Frequency - Transition 100MHz

Product Description

BC817-40 BC817-40R13 Bipolar (BJT) Transistor NPN 45 V 800 mA 100MHz 310 mW SMD SOT-23-3 (TO-236) BC817 series Provide Bom services/More than 100,000 types of electronic components TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Package ...

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Transaction Info
Price US $ 0.01-1.00/ Piece US $ 0.10-0.60/ Piece US $ 0.10-0.60/ Piece US $ 0.10-0.60/ Piece US $ 0.10-0.60/ Piece
Min Order 1 Pieces 1000 Pieces 1000 Pieces 1000 Pieces 1000 Pieces
Trade Terms - - - - -
Payment Terms T/T, Western Union, Paypal L/C, T/T L/C, T/T L/C, T/T L/C, T/T
Quality Control
Product Certification RoHS, CE RoHS, ISO RoHS, ISO RoHS, ISO RoHS, ISO
Management System Certification GMP ISO 9001, ISO 14001 ISO 9001, ISO 14001 ISO 9001, ISO 14001 ISO 9001, ISO 14001
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - - - - -
Business Model OEM Own Brand Own Brand Own Brand Own Brand
Average Lead Time - Off-season: 3-6 Month(s)
Peak-season: 1 Month(s)
Off-season: 3-6 Month(s)
Peak-season: 1 Month(s)
Off-season: 3-6 Month(s)
Peak-season: 1 Month(s)
Off-season: 3-6 Month(s)
Peak-season: 1 Month(s)
Product Attributes
Specification
Function: NPN;
Fet Typecurrent - Collector (IC) (Max): 800 Ma;
Voltage - Collector Emitter Breakdown (M: 45 V;
Vce Saturation (Max) @ Ib, IC: 700mv @ 50mA, 500mA;
Current - Collector Cutoff (Max): 100na (Icbo);
DC Current Gain (Hfe) (Min) @ IC, Vce: 250 @ 100mA, 1V;
Power - Max: 310 MW;
Operating Temperature: -55°c ~ 150°c (Tj);
Mounting Type: Surface Mount;
Package / Case: to-236-3, Sc-59, Sot-23-3;
Supplier Device Package: Sot-23-3 (to-236);
Frequency - Transition: 100MHz;
Shape: ST;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Air Cooled Tube;
Function: Microwave Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
Shape: ST;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Air Cooled Tube;
Function: Microwave Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
Shape: ST;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Air Cooled Tube;
Function: Microwave Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
Shape: ST;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Air Cooled Tube;
Function: Microwave Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
Supplier Name

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shanghai Winture Electric Co., Ltd.

China Supplier - Gold Member Audited Supplier

Shanghai Winture Electric Co., Ltd.

China Supplier - Gold Member Audited Supplier

Shanghai Winture Electric Co., Ltd.

China Supplier - Gold Member Audited Supplier

Shanghai Winture Electric Co., Ltd.

China Supplier - Gold Member Audited Supplier