Igw25t120 Transistor Components Igw25n120h3 Igw20n60h3 to-247-3 pictures & photos

Igw25t120 Transistor Components Igw25n120h3 Igw20n60h3 to-247-3

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Price

Min. Order Reference FOB Price

1 Piece US$0.0001-0.10 / Piece

Sepcifications

Certification RoHS, CE, ISO, CCC
Encapsulation Structure Plastic Sealed Transistor
Installation SMD Triode
Working Frequency High Frequency
Power Level Medium Power
Function Power Triode
Structure PNP
Material Silicon
Transport Package N/a
Specification DIP/SMD
Trademark N/A
Origin Original

Product Description

IGW25T120 transistor components IGW25N120H3 IGW20N60H3 to-247-3 TYPE DESCRIBE IHW30N135R5 IGW25T120 Package Tape and Reel (TR) Part status in stock Type Transistor Supplier device packaging to247-3 Q1: What services do you offer? We provide turnkey solutions including ...

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ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews： 5.0/5.0

(6 Reviews)

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics
Main Products IC, Resistor, Capacitor, Sensor, Transistor, Diode, Triode, Passive Components, Drive IC
Management System Certification GMP
Export Year 2021-08-12
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe

Igw25t120 Comparison

	Igw25t120 Transistor Components Igw25n120h3 Igw20n60h3 to-247-3 Contact Now	Quick View Cyp1837 Integrated Circuit Single Phase Energy Meter IC with Integrated Oscillator Contact Now	G4bc30ud/Irg4bc30ud Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode MOS Field Effect to-220, IC, Electronic Components, Integrated Circuit Contact Now	Quick View Cyp1840 Built-in Clock, Calibration Free, Single Phase Energy Meter IC with Integrated Oscillator Contact Now	G12p Vds 100V ID 12A to-252 P-Channel Power RoHS Compliant Mosfet Contact Now

Transaction Info
	Igw25t120 Transistor Components Igw25n120h3 Igw20n60h3 to-247-3 Contact Now	Quick View Cyp1837 Integrated Circuit Single Phase Energy Meter IC with Integrated Oscillator Contact Now	G4bc30ud/Irg4bc30ud Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode MOS Field Effect to-220, IC, Electronic Components, Integrated Circuit Contact Now	Quick View Cyp1840 Built-in Clock, Calibration Free, Single Phase Energy Meter IC with Integrated Oscillator Contact Now	G12p Vds 100V ID 12A to-252 P-Channel Power RoHS Compliant Mosfet Contact Now
Price	US $ 0.0001-0.10/ Piece	US $ 0.154-0.27/ Piece	Negotiable	US $ 0.326-0.569/ Piece	US $ 0.01-0.40/ Piece
Min Order	1 Pieces	50 Pieces	50 Pieces	50 Pieces	20 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal	T/T	T/T, Paypal	T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS, CE, ISO, CCC	-	RoHS	-	RoHS, ISO
Management System Certification	GMP	ISO 9001	-	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM	OEM, ODM, Own Brand	-	OEM, ODM, Own Brand	Own Brand
Average Lead Time	-	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: 1 Month(s)
Product Attributes
Specification	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: High Frequency; Power Level: Medium Power; Function: Power Triode; Structure: PNP; Material: Silicon;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Power Level: High Power; Function: Power Triode; Package: Sop8;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Standard; Power Level: Standard; Rated Voltage (DC): 600 V; Rated Current: 23.0 a; Parts Series: Irg4bc30ud; Input Capacitance: 1.10 NF; Number of Pins: 3; Rise Time: 21.0 Ns; Working Temperature: -55~150(Celsius ); Package: to-220; Breakdown Voltage (Collector-Emitter): 600V; Reverse Recovery Time: 42 Ns; Rated Power (Max): 100 W; Dissipated Power (Max): 100000 MW; Packing: Tube;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Power Level: High Power; Function: Power Triode; Current: 10mA~35A;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Through Hole; Power Level: Medium Power; Structure: Trench; Material: Silicon; Vdss: 100V; ID: 12A; Pd: 57W; RDS(on) Typical: 170mohm(Vgs=10V); RDS(on)Max: 200mohm(Vgs=10V); Vth (Max): -1.6V; CISS: 1720PF; Crss: 41PF; Spq: 2500PCS/Reel;
Supplier Name	ShenZhen Nova Semiconductor Co., Ltd.	CY Wireless Technology Limited	Yangjiang RUI XIAO Enterprise Co., Ltd.	CY Wireless Technology Limited	Wuxi Goford Semiconductor Co., Ltd.
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