Sgt75t65sdm1p7 Silan Microagent Original 75A 650V IGBT pictures & photos

Sgt75t65sdm1p7 Silan Microagent Original 75A 650V IGBT

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Price

Min. Order Reference FOB Price

100 Pieces US$1.19-2.28 / Piece

Sepcifications

Certification RoHS
Encapsulation Structure Chip Transistor
Installation Plug-in Triode
Working Frequency High Frequency
Power Level High Power
Structure Planar
Material Silicon
Transport Package by Sea(Carton)
Origin China

Product Description

Insulated gate bipolar transistor Describe the main features Technical documentation related package drawings The SGT75T65SDM1P7 insulated gate bipolar transistor is manufactured using the third-generation Field Stop III process of Silla Microelectronics, which has low conduction and switching ...

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Pharm-Genics (Jiangsu) Pharmaceutical Equipment Trading Co., Ltd.

Diamond Member Since 2018

Audited Supplier

Business Type Trading Company
Main Products Plastic Products, Purified Water Equipment, Stainless Steel Pipe Fittings
Year of Establishment 2017-12-29
Management System Certification ISO 9001, GMP
Export Year 2017-12-30
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Silan Comparison

	Sgt75t65sdm1p7 Silan Microagent Original 75A 650V IGBT Contact Now	N-Channel Enhancement Mode Power Mosfet G06n02h Contact Now	Irf9530n P-Channel Hexfet Power Mosfet to-220ab Transistor, Electronic Components, Integrated Circuits Contact Now	Fqp12n60c/Fqpf12n60c N-Channel Mosfet to-220f for Switch Mode Power Supply, Electronic Lamp Ballast Contact Now	Irf630n Mosfet Transistor N-Channel 200V 9.3A 3pin (3+Tab) to-220ab Integrated Circuit, Electronic Components Contact Now

Transaction Info
	Sgt75t65sdm1p7 Silan Microagent Original 75A 650V IGBT Contact Now	N-Channel Enhancement Mode Power Mosfet G06n02h Contact Now	Irf9530n P-Channel Hexfet Power Mosfet to-220ab Transistor, Electronic Components, Integrated Circuits Contact Now	Fqp12n60c/Fqpf12n60c N-Channel Mosfet to-220f for Switch Mode Power Supply, Electronic Lamp Ballast Contact Now	Irf630n Mosfet Transistor N-Channel 200V 9.3A 3pin (3+Tab) to-220ab Integrated Circuit, Electronic Components Contact Now
Price	US $ 1.19-2.28/ Piece	US $ 0.42-0.52/ Piece	US $ 0.13-0.20/ Piece	US $ 0.15-0.20/ Piece	US $ 0.13-0.23/ Piece
Min Order	100 Pieces	20 Pieces	100 Pieces	100 Pieces	100 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal	T/T, D/P, Western Union, Paypal, Money Gram	T/T	T/T	T/T
Quality Control
Product Certification	RoHS	RoHS, ISO	RoHS	RoHS	RoHS
Management System Certification	ISO 9001, GMP	ISO 9001	-	-	-
Trade Capacity
Export Markets	North America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM	Own Brand	-	-	-
Average Lead Time	Off-season: 1 Month(s) Peak-season: within 15 Day(s)	Off-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Power Level: High Power; Structure: Planar; Material: Silicon;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Surface Mount; Power Level: Small Power; Function: Switch Transistor; Structure: Trench; Material: Silicon; Vdss: 20V; ID: 6A; Pd: 1.8W; RDS: 11.4;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Standard; Power Level: Standard; Function: Power Triode, Switching Triode; Structure: IC; Material: Plastic, Iron; Rated Voltage (DC): -100V; Rated Current: -14.0 a; Drain Source Resistance: 200 M Ω; Polar: P-Channel; Dissipated Power: 79.0 W; Number of Pins: 3; Operating Temperature: -55~175(Celsius); Package: to-220; Packaging: Tube;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Function: Power Triode, Switching Triode; Structure: NPN; Material: Silicon; Polarity: N-Channel; Installation Method: Through Hole; Rated Voltage (DC): 600V; Rated Current: 12.0 a; Rated Power: 51 W; Number of Pins: 3; Operating Temperature: -55~150(Celsius); Packaging: Tube;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Solder; Working Frequency: Standard; Power Level: Standard; Structure: IC; Material: Plastic, Iron; Rated Voltage (DC): 200 V; Rated Current: 9.30 a; Dissipated Power: 82 W; Rise Time: 14.0 Ns; Operating Temperature: -55~175(Celsius); Packaging: Tube;
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