RF Metal Ceramic Electronic Tube (3CPX800A7) pictures & photos

RF Metal Ceramic Electronic Tube (3CPX800A7)

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About this Item

Price

Min. Order Reference FOB Price

1 Piece Negotiable

Sepcifications

Encapsulation Structure Other
Working Frequency High Frequency
Power Level High Power
Function Power Triode
Material Metal Ceramic
Transport Package Foam Packing
Trademark SETEC
Origin China
Filament Voltage 13.5V
Filament Current 1.5A
Amplifcation Factor 200
Power 800W
Working Position Vertical
Max Height 64mm
Max Diameter 64.3mm
Max Weight 340g
Cooling Forced Air

Product Description

3CPX800A7 is a metal ceramic RF power supply triode tube designed specifically for industrial applications. This tube uses a coaxial design and metal-ceramic technology. This tetrode may be operated in CW or pulse modes. For operation in pulse mode, the parameters depend on each equipment ...

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Ningbo Setec Electron Co., Ltd.

Gold Member Since 2015

Audited Supplier

Main Products Oscillator Tube, High Frequency Heating Tube, Power Gride Tube, Electronic Tube, Vacuum Tube, Electron Tube, High Power Ceramic Capacitor, Electron Products, Electronic Components, Transmitting Tube
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Terms of Payment LC, T/T, Western Union
International Commercial Terms(Incoterms) FOB, EXW, CIF
OEM/ODM Availability Yes

Ceramic Vacuum Tube Comparison

	RF Metal Ceramic Electronic Tube (3CPX800A7) Contact Now	Darlington Transistor Array Chip Sop-16 Kid65004af-Elp Kid65004af Contact Now	Quick View Electronic Components 1200V 64A IGBT Transistor Fgl40n120and 40n120 Contact Now	New and Original 2sk2611 K2611 Transistor Contact Now	Quick View Original Mosfet Transistor 23A 500V Fmh23n50e 23n50e in Stock Contact Now

Transaction Info
	RF Metal Ceramic Electronic Tube (3CPX800A7) Contact Now	Darlington Transistor Array Chip Sop-16 Kid65004af-Elp Kid65004af Contact Now	Quick View Electronic Components 1200V 64A IGBT Transistor Fgl40n120and 40n120 Contact Now	New and Original 2sk2611 K2611 Transistor Contact Now	Quick View Original Mosfet Transistor 23A 500V Fmh23n50e 23n50e in Stock Contact Now
Price	Negotiable	US $ 0.12-0.13/ Piece	US $ 3.00-5.00/ Piece	US $ 0.50-0.58/ Piece	US $ 0.70-1.07/ Piece
Min Order	1 Pieces	10 Pieces	100 Pieces	10 Pieces	1000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Western Union	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	-	RoHS	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	-	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	> US $100 Million	-	-	-	-
Business Model	OEM, ODM	-	-	-	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Encapsulation Structure: Other; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Material: Metal Ceramic; Filament Voltage: 13.5V; Filament Current: 1.5A; Amplifcation Factor: 200; Power: 800W; Working Position: Vertical; Max Height: 64mm; Max Diameter: 64.3mm; Max Weight: 340g; Cooling: Forced Air;	Encapsulation Structure: Chip Transistor; Function: Power Triode, Switching Triode; Material: Plastic and Copper; Brand Name: Original; Lead Free Status: RoHS Compliant; Operating Temperature: Standard; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post; Condition: Brand Newand Original; Use: Computer;	Encapsulation Structure: Plug-in Transistor; Installation: Through Hole; Working Frequency: Overclocking; Power Level: High Power; Function: Photosensitive, Switching Triode; Structure: NPN; Brand Name: Original; Product Number: Fgl40n120; Product: Transistor; Category: IGBT; IGBT Type: NPT; Mounting Type: Through Hole; Base Product Number: Fgl40n120and;	Encapsulation Structure: Plug-in Transistor; Installation: Plug-in Triode; Working Frequency: Overclocking; Power Level: High Power; Function: Photosensitive, Switching Triode; Structure: NPN; Material: Silicon; Brand Name: Original; Lead Free Status: RoHS Compliant; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post; Condition: Brand Newand Original; Conductive Mode: Enhanced; Diode Use: Power Tube; Use: MW/Microwave;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Working Frequency: /; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: /; Material: Germanium; Brand Name: Original; Mounting Type: Through Hole; Pulsed Drain Current-Max (Idm): 92 a; Ds Breakdown Voltage-Min: 500 V; Fet Technology: Metal-Oxide Semiconductor; Power Dissipation-Max (ABS): 315 W; Transistor Application: Switching;
Supplier Name	Ningbo Setec Electron Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.
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