High Frequency Ceramic Vauum Electron Valve (3CW20000A7) pictures & photos

High Frequency Ceramic Vauum Electron Valve (3CW20000A7)

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Price

Min. Order Reference FOB Price

1 Piece Negotiable

Sepcifications

Encapsulation Structure Other
Working Frequency High Frequency
Power Level High Power
Function Power Triode
Material Metal Ceramic
Transport Package Foam Packing
Trademark SETEC
Origin China
Filament Voltage 7.5V
Filament Current 104A
Amplifcation Factor 200
Power 20kw
Working Position Vertical
Max Height 525.8mm
Max Diameter 171.4mm
Max Weight 5.5kg
Cooling Water and Forced Air

Product Description

3CW20000A7 is a metal ceramic RF power supply triode tube designed specifically for industrial applications. This tube uses a coaxial design and metal-ceramic technology. This tetrode may be operated in CW or pulse modes. For operation in pulse mode, the parameters depend on each equipment ...

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Ningbo Setec Electron Co., Ltd.

Gold Member Since 2015

Audited Supplier

Main Products Oscillator Tube, High Frequency Heating Tube, Power Gride Tube, Electronic Tube, Vacuum Tube, Electron Tube, High Power Ceramic Capacitor, Electron Products, Electronic Components, Transmitting Tube
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Terms of Payment LC, T/T, Western Union
International Commercial Terms(Incoterms) FOB, EXW, CIF
OEM/ODM Availability Yes

Electron Valve Comparison

	High Frequency Ceramic Vauum Electron Valve (3CW20000A7) Contact Now	Tt160n16sof Tt160n16sofhpsa1 Hot Transistor Components Contact Now	2sk3878 Field Effect Transistor Silicon N-Channel Mosfet Type to-3p Integrated Circuit, Electronic Components Contact Now	Chip Microcontroller Integrated Circuit SMD Transistors Triode Contact Now	Pmeg4005ejf SMD Diode Mega Schottky Barrier Rectifiers 40V 500mA SOD-323f Contact Now

Transaction Info
	High Frequency Ceramic Vauum Electron Valve (3CW20000A7) Contact Now	Tt160n16sof Tt160n16sofhpsa1 Hot Transistor Components Contact Now	2sk3878 Field Effect Transistor Silicon N-Channel Mosfet Type to-3p Integrated Circuit, Electronic Components Contact Now	Chip Microcontroller Integrated Circuit SMD Transistors Triode Contact Now	Pmeg4005ejf SMD Diode Mega Schottky Barrier Rectifiers 40V 500mA SOD-323f Contact Now
Price	Negotiable	US $ 0.0001-0.10/ Piece	US $ 0.192-0.607/ Piece	US $ 0.02/ Piece	US $ 0.14-0.16/ Piece
Min Order	1 Pieces	1 Pieces	100 Pieces	200 Pieces	10 Pieces
Trade Terms	FOB, CIF, EXW	-	-	-	-
Payment Terms	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T	L/C, T/T, Paypal	T/T, Western Union, Paypal
Quality Control
Product Certification	-	RoHS, CE, ISO, CCC	RoHS	-	RoHS, ISO
Management System Certification	-	GMP	-	-	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	-	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	> US $100 Million	-	-	-	-
Business Model	OEM, ODM	OEM	-	-	OEM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-
Product Attributes
Specification	Encapsulation Structure: Other; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Material: Metal Ceramic; Filament Voltage: 7.5V; Filament Current: 104A; Amplifcation Factor: 200; Power: 20kw; Working Position: Vertical; Max Height: 525.8mm; Max Diameter: 171.4mm; Max Weight: 5.5kg; Cooling: Water and Forced Air;	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: High Frequency; Power Level: Medium Power; Structure: PNP; Material: Silicon;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Power Level: Medium and High Power; Function: Power Triode, Switching Triode; Structure: NPN; Material: Silicon; Threshold Voltage: 4 V; Number of Pins: 3; Operating Temperature: -55~ 150(Celsius); Drain-Source Resistance: 1.3 Ω; Polarity: N-Channel; Power Dissipation: 150 W; Drain-Source Voltage (Vds): 900 V; Continuous Drain Current (IDS): 9.00 a; Input Capacitance (CISS): 2200PF @25V(Vds); Encapsulation: to-3p; Packing: Tube;	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: High Frequency; Power Level: Medium Power; Structure: NPN; OEM: Yes; Mqq: 10000;	Encapsulation Structure: SMD; Installation: SMD Triode; Working Frequency: Standard; Power Level: Standard; Function: Standard; Structure: Standard; Material: Silicon; Package: Sc-90, SOD-323f; Mounting Type: Surface Mount; Base Product Number: Pmeg4005; Technology: Schottky;
Supplier Name	Ningbo Setec Electron Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	Yangjiang RUI XIAO Enterprise Co., Ltd.	Jinjiang Chaote Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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