What is High Frequency Vacuum Ceramic Electron Tube (CTK15-2)

Name: High Frequency Vacuum Ceramic Electron Tube (CTK15-2)
Uploaded: 2023-12-14T15:41:07+08:00
Description: CTK15-2, it is coaxial structure metal ceramic triode. Directly heated thorium tungsten cathode. The stem is cooled by forced air and the anode is cooled by water. Max work frequency 120MHz. Max anode

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Price

Min. Order Reference FOB Price

1 Piece US$2,500.00-3,500.00 / Piece

Sepcifications

Shape Metal Ceramic
Cooling Method Water Cooled Tube
Working Frequency High Frequency
Encapsulation Structure Other
Power Level High Power
Material Metal Ceramic
Transport Package Foam Packing
Trademark SETEC
Origin China
Filament Voltage 7.2V
Filament Current 180A
Amplifcation Factor 200
Power 45kw
Working Position Vertical
Max Height 338mm
Max Diameter 135mm
Max Weight 3.8kg
Cooling Water

Product Description

CTK15-2, it is coaxial structure metal ceramic triode. Directly heated thorium tungsten cathode. The stem is cooled by forced air and the anode is cooled by water. Max work frequency 120MHz. Max anode dissipation power 20kW. Max anode voltage 13kV. Max output power 45kW. the tube is mainly used in ...

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Ningbo Setec Electron Co., Ltd.

Gold Member Since 2015

Audited Supplier

Main Products Oscillator Tube, High Frequency Heating Tube, Power Gride Tube, Electronic Tube, Vacuum Tube, Electron Tube, High Power Ceramic Capacitor, Electron Products, Electronic Components, Transmitting Tube
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Terms of Payment LC, T/T, Western Union
International Commercial Terms(Incoterms) FOB, EXW, CIF
OEM/ODM Availability Yes

Electron Tube Comparison

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Transaction Info
	Quick View High Frequency Vacuum Ceramic Electron Tube (CTK15-2) Contact Now	Quick View Power Conditioner Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now	Quick View Automotive Industry Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now	Quick View Nce6080 Nce N-Channel 60V 80A to-252 Enhancement Mode Power Mosfet Transistor Nce6080K Contact Now	Res Thick Film Array 220 Ohm 5% ± 200ppm/C Isol Molded 8-Pin 12 Contact Now
Price	US $ 2,500.00-3,500.00/ Piece	US $ 0.10-0.60/ Piece	US $ 0.10-0.60/ Piece	US $ 0.1/ Piece	US $ 0.10-0.50/ Piece
Min Order	1 Pieces	1000 Pieces	1000 Pieces	1 Pieces	1 Pieces
Trade Terms	FOB, CIF, EXW	-	-	-	-
Payment Terms	T/T, Western Union, Paypal	L/C, T/T	L/C, T/T	T/T, Western Union, Paypal	T/T, Western Union, Paypal
Quality Control
Product Certification	-	RoHS, ISO	RoHS, ISO	RoHS	-
Management System Certification	-	ISO 9001, ISO 14001	ISO 9001, ISO 14001	GMP	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	> US $100 Million	-	-	-	-
Business Model	OEM, ODM	Own Brand	Own Brand	OEM	OEM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	-	-
Product Attributes
Specification	Shape: Metal Ceramic; Cooling Method: Water Cooled Tube; Working Frequency: High Frequency; Encapsulation Structure: Other; Power Level: High Power; Material: Metal Ceramic; Filament Voltage: 7.2V; Filament Current: 180A; Amplifcation Factor: 200; Power: 45kw; Working Position: Vertical; Max Height: 338mm; Max Diameter: 135mm; Max Weight: 3.8kg; Cooling: Water;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Microwave Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Microwave Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Cooling Method: Naturally Cooled Tube; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Drain Source Voltage (Vdss): 60V; Continuous Drain Current (ID): 80A; Power Dissipation (Pd): 110W; Drain Source on Resistance (RDS(on)@Vgs,: 8.5mΩ@10V,20A; Gate Threshold Voltage (Vgs(Th)@ID): 4V@250ua; Type: N Channel;	Shielding Type: Remote Cut-Off Shielding Tube; Brand: No Brand;
Supplier Name	Ningbo Setec Electron Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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