Metal Ceramic Oscillactor Amplifier Vacuum Tube (YC-179)

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

1 Piece Negotiable

Sepcifications

  • Encapsulation Structure Foam Packing
  • Installation Vertical
  • Working Frequency 110MHz
  • Power Level High Power
  • Function Power Triode
  • Material Metal Ceramic
  • Transport Package Foam Packing
  • Trademark SETEC
  • Origin China
  • Filament Voltage 15V
  • Filament Current 13A
  • Amplifcation Factor 200
  • Power 5000W
  • Max Height 209.6mm
  • Max Diameter 125.5mm
  • Cooling Forced Air
  • Cooling Method Air Cooled Tube
  • Function and Usage High Frequency Electron Tube for RF Power Supply
  • Current Capacity 13A

Product Description

3CPX5000A7,YC-179 is a metal ceramic RF power supply triode tube designed specifically for industrial applications. This tube uses a coaxial design and metal-ceramic technology. This tetrode may be operated in CW or pulse modes. For operation in pulse mode, the parameters depend on each equipment ...

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Ceramic Vacuum Tube Comparison
Transaction Info
Price Negotiable US $ 0.05-0.10/ Piece US $ 0.1/ Piece US $ 0.01/ Piece US $ 0.2/ Piece
Min Order 1 Pieces 10 Pieces 100 Pieces 1 Pieces 10 Pieces
Trade Terms - - - - -
Payment Terms T/T, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal, Money Gram T/T, Western Union, Paypal T/T, Western Union, Paypal T/T, Western Union, Paypal
Quality Control
Product Certification - RoHS, CE, ISO, CCC RoHS RoHS RoHS
Management System Certification - GMP GMP GMP GMP
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue > US $100 Million - - - -
Business Model OEM, ODM OEM OEM OEM OEM
Average Lead Time Off-season: within 15 Day(s)
Peak-season: 1 Month(s)
- - - -
Product Attributes
Specification
Encapsulation Structure: Foam Packing;
Installation: Vertical;
Working Frequency: 110MHz;
Power Level: High Power;
Function: Power Triode;
Material: Metal Ceramic;
Filament Voltage: 15V;
Filament Current: 13A;
Amplifcation Factor: 200;
Power: 5000W;
Max Height: 209.6mm;
Max Diameter: 125.5mm;
Cooling: Forced Air;
Cooling Method: Air Cooled Tube;
Function and Usage: High Frequency Electron Tube for RF Power Supply;
Current Capacity: 13A;
Encapsulation Structure: Ceramic Packaged Transistor;
Installation: Plug-in Triode;
Working Frequency: N/a;
Power Level: N/a;
Structure: N/a;
Material: N/a;
Encapsulation Structure: Chip Transistor;
Installation: SMD Triode;
Power Level: Medium Power;
Structure: Mosfet;
Material: Silicon;
Fet Type: P-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 30 V;
Current - Continuous Drain (ID) @ 25: 10A (Ta);
Drive Voltage (Max RDS on, Min RDS on): 4.5V, 10V;
RDS on (Max) @ ID, Vgs: 20mohm @ 5.6A, 10V;
Vgs(Th) (Max) @ ID: 1V @ 250µa;
Gate Charge (Qg) (Max) @ Vgs: 92 Nc @ 10 V;
Vgs (Max): ±20V;
Input Capacitance (CISS) (Max) @ Vds: 1700 PF @ 25 V;
Operating Temperature: -55°c ~ 150°c (Tj);
Mounting Type: Surface Mount;
Package / Case: 8-So;
Power Dissipation (Max): 2.5W (Ta);
Supplier Device Package: 8-Soic;
Encapsulation Structure: Chip Transistor;
Installation: Plug-in Triode;
Power Level: Medium Power;
Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode;
Material: Aluminum;
Color: Customised;
Product Name: Connector;
Quality: High;
Size: Customised;
Encapsulation Structure: Chip Transistor;
Installation: Plug-in Triode;
Power Level: Medium Power;
Structure: Mosfet;
Material: Silicon;
Fet Feature: N-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 600 V;
Current - Continuous Drain (ID) @ 25: 48A (Tc);
RDS on (Max) @ ID, Vgs: 60mohm @ 15.9A, 10V;
Vgs(Th) (Max) @ ID: 4V @ 800µa;
Gate Charge (Qg) (Max) @ Vgs: 67 Nc @ 10 V;
Input Capacitance (CISS) (Max) @ Vds: 2895 PF @ 400 V;
Operating Temperature: -55°c ~ 150°c (Tj);
Mounting Type: Through Hole;
Package / Case: to-247-3;
Supplier Name

Ningbo Setec Electron Co., Ltd.

China Supplier - Gold Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier