| Specification |
Encapsulation Structure: Other;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Power Triode;
Material: Metal Ceramic;
Filament Voltage: 6.3V;
Filament Current: 32A;
Amplifcation Factor: 25;
Power: 3.4kw;
Working Position: Vertical;
Max Height: 183mm;
Max Diameter: 101mm;
Max Weight: 1.5kg;
Cooling: Forced Air;
Cooling Method: Air Cooled Tube;
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Encapsulation Structure: Ceramic Packaged Transistor;
Installation: SMD Triode;
Working Frequency: Overclocking;
Power Level: High Power;
Function: Power Triode;
Structure: Alloy;
Material: Silicon;
Package: Tube;
Product Status: Active;
Transistor Type: 8 NPN Darlington;
Current - Collector (IC) (Max): 500mA;
Vce Saturation (Max) @ Ib, IC: 1.6V @ 500µa, 350mA;
DC Current Gain (Hfe) (Min) @ IC, Vce: 1000 @ 350mA, 2V;
Power - Max: 2.25W;
Operating Temperature: -20°c ~ 150°c (Tj);
Mounting Type: Through Hole;
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Encapsulation Structure: Chip Transistor;
Installation: Plug-in Triode;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Photosensitive, Power Triode, Switching Triode;
Structure: Alloy;
Material: Silicon;
Operating Temperature: -55~ 150(Celsius);
Maximum Allowable Collector Current: 10A;
Maximum Collector Current (Icm): 500mA;
Maximum Power: 300MW;
Transistor Polarity: NPN Transistor;
Collector Breakdown Voltage (Vceo): 25V;
Ultrasonic Electronic Circuit Machine EQ: Ultrasonic Electronic Circuit Machine Equipment;
Supplier Type: Original Manufacturer;
DC Current Gain (Hfe) (Min) @ IC, Vce: DC Current Gain (Hfe) (Min) @ IC, Vce;
Mounting Type: Through Hole;
Type: 2sc3998;
|
Encapsulation Structure: Chip Transistor;
Installation: Plug-in Triode;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Photosensitive, Power Triode, Switching Triode;
Structure: Alloy;
Material: Silicon;
Operating Temperature: -55~ 150(Celsius);
Maximum Allowable Collector Current: 10A;
Maximum Collector Current (Icm): 500mA;
Maximum Power: 300MW;
Transistor Polarity: NPN Transistor;
Collector Breakdown Voltage (Vceo): 25V;
Ultrasonic Electronic Circuit Machine EQ: Ultrasonic Electronic Circuit Machine Equipment;
Supplier Type: Original Manufacturer;
DC Current Gain (Hfe) (Min) @ IC, Vce: DC Current Gain (Hfe) (Min) @ IC, Vce;
Mounting Type: Through Hole;
Type: 2sc3998;
|
Encapsulation Structure: Chip Transistor;
Installation: Plug-in Triode;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Photosensitive, Power Triode, Switching Triode;
Structure: Alloy;
Material: Silicon;
Operating Temperature: -55~ 150(Celsius);
Maximum Allowable Collector Current: 10A;
Maximum Collector Current (Icm): 500mA;
Maximum Power: 300MW;
Transistor Polarity: NPN Transistor;
Collector Breakdown Voltage (Vceo): 25V;
Ultrasonic Electronic Circuit Machine EQ: Ultrasonic Electronic Circuit Machine Equipment;
Supplier Type: Original Manufacturer;
DC Current Gain (Hfe) (Min) @ IC, Vce: DC Current Gain (Hfe) (Min) @ IC, Vce;
Mounting Type: Through Hole;
Type: 2sc3998;
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