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US$15.00-20.00 / Piece

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1200V 600A 62mm IGBT Module Dgb600h120L2t pictures & photos

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What is 1200V 600A 62mm IGBT Module Dgb600h120L2t

Name: 1200V 600A 62mm IGBT Module Dgb600h120L2t
Uploaded: 2023-12-08T14:24:45+08:00
Description: 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the R

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Price

Min. Order Reference FOB Price

240 Pieces US$15.00-20.00 / Piece

Sepcifications

Manufacturing Technology Discrete Device
Material Metal-Oxide Semiconductor
Type N-type Semiconductor
Package Module
Application Welding, UPS, Three-Leve Inverter
Model Dgb600h120L2t
Batch Number 2022
Brand Wxdh
Transport Package 62mm
Trademark WXDH
Origin Wuxi, China

Product Description

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard Features FS Trench Technology, Positive temperature coefficient Low saturation ...

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Jiangsu Donghai Semiconductor Co.,Ltd

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products Mosfets, Diodes, IGBT, Transistor, Thyristor, IC.
Number of Employees 156
Year of Establishment 2004-12-07
Management System Certification ISO9001:2015, ISO14001:2015, IATF16949
Average Lead Time Peak Season Lead Time: 1-3 months
Off Season Lead Time: one month

IGBT Comparison

	Quick View 1200V 600A 62mm IGBT Module Dgb600h120L2t Contact Now	Quick View 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88 to-220c Contact Now	Quick View 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p28 to-220c Contact Now	Quick View 30A 400V Fast Recovery Diode Mur3040ncs to-3pn Contact Now	100A 40V N-Channel Enhancement Mode Power Mosfet Dhs008n04p Dfn5X6 Contact Now

Transaction Info
	Quick View 1200V 600A 62mm IGBT Module Dgb600h120L2t Contact Now	Quick View 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88 to-220c Contact Now	Quick View 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p28 to-220c Contact Now	Quick View 30A 400V Fast Recovery Diode Mur3040ncs to-3pn Contact Now	100A 40V N-Channel Enhancement Mode Power Mosfet Dhs008n04p Dfn5X6 Contact Now
Price	US $ 15.00-20.00/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.5/ Piece
Min Order	240 Pieces	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T
Quality Control
Management System Certification	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949
Trade Capacity
Export Markets	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: N-type Semiconductor; Package: Module; Application: Welding, UPS, Three-Leve Inverter; Model: Dgb600h120L2t; Batch Number: 2022; Brand: Wxdh;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: P-type Semiconductor; Package: to-220c; Application: Power Switching,Converters, Full Bridge Control; Model: Dhs045n88; Batch Number: 2021; Brand: Wxdh; Voltage: 85V; Current: 120A;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: P-type Semiconductor; Package: to-220c; Application: Power Switching, Converters, Full Bridge Control; Model: Dh100p28; Batch Number: 2021; Brand: Wxdh; Voltage: 100V; Current: 30A;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-3pn; Application: Switching Power Supply; Model: Mur3040ncs; Batch Number: 2021; Brand: Wxdh; Voltage: 400V; Current: 30A;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: N-type Semiconductor; Package: Dfn5X6; Application: Power Switching,Converters, Full Bridge Control; Model: Dhs008n04p; Batch Number: 2021; Brand: Wxdh; Voltage: 40V; Current: 100A;
Supplier Name	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd
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