Wholesale of New Original Power IGBT Modules Skm100GB12t4g Skm150GB12t4g Skm450GB12t4 Skm600GB12t pictures & photos

Wholesale of New Original Power IGBT Modules Skm100GB12t4g Skm150GB12t4g Skm450GB12t4 Skm600GB12t

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Price

Purchase Qty. Reference FOB Price

1-9 Pieces US$100.00

10+ Pieces US$90.00

Sepcifications

Certification RoHS, CE, ISO, CCC
Working Frequency High Frequency
Power Level High Power
Structure Planar
Transport Package Original Packaging
Specification Standard specifications
Origin Germany

Product Description

Product Description Product Description Quality:100% New Original Condition: 100% Original Selling Units:Single item 1. Note: Due to price changes, please refer to the latest price 2. Delivery terms: Within 4-35DAYS 3. Payment terms: 100% in advance by T/T. 4. Shipping terms: ...

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Xiamen Swill Intelligence Technology Co., Ltd.

Diamond Member Since 2023

Audited Supplier

Rating & Reviews： 5.0/5.0

(2 Reviews)

Business Type Manufacturer/Factory, Trading Company
Main Products PLC Module, Servo Motor, Frequency Converter, Step Motor, Circuit Breaker, Sensor, Transformer
Registered Capital 5880000 RMB
Plant Area 101~500 square meters
Management System Certification ISO 9001, ISO 9000, ISO 14000, IATF16949, GMP, HACCP, GAP, BREEAM, QSR, LEED
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: one month

IGBT Module Comparison

	Wholesale of New Original Power IGBT Modules Skm100GB12t4g Skm150GB12t4g Skm450GB12t4 Skm600GB12t Contact Now	2sk3878 Field Effect Transistor Silicon N-Channel Mosfet Type to-3p Integrated Circuit, Electronic Components Contact Now	Chip Microcontroller Integrated Circuit SMD Transistors Triode Contact Now	Pmeg4005ejf SMD Diode Mega Schottky Barrier Rectifiers 40V 500mA SOD-323f Contact Now	Original Pdtd113ztvl Pre-Biased Bipolar Transistor (BJT) NPN to-236ab Contact Now

Transaction Info
	Wholesale of New Original Power IGBT Modules Skm100GB12t4g Skm150GB12t4g Skm450GB12t4 Skm600GB12t Contact Now	2sk3878 Field Effect Transistor Silicon N-Channel Mosfet Type to-3p Integrated Circuit, Electronic Components Contact Now	Chip Microcontroller Integrated Circuit SMD Transistors Triode Contact Now	Pmeg4005ejf SMD Diode Mega Schottky Barrier Rectifiers 40V 500mA SOD-323f Contact Now	Original Pdtd113ztvl Pre-Biased Bipolar Transistor (BJT) NPN to-236ab Contact Now
Price	US $ 90.00-100.00/ Piece	US $ 0.192-0.607/ Piece	US $ 0.02/ Piece	US $ 0.14-0.16/ Piece	US $ 0.019-0.025/ Piece
Min Order	1 Pieces	100 Pieces	200 Pieces	10 Pieces	100 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T	T/T	L/C, T/T, Paypal	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS, CE, ISO, CCC	RoHS	-	RoHS, ISO	RoHS, ISO
Management System Certification	ISO 9001, ISO 9000, ISO 14000, IATF16949, GMP, HACCP, GAP, BREEAM, QSR, LEED	-	-	GMP	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	-	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM	-	-	OEM	OEM
Average Lead Time	Off-season: 1 Month(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	-
Product Attributes
Specification	Working Frequency: High Frequency; Power Level: High Power; Structure: Planar;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Power Level: Medium and High Power; Function: Power Triode, Switching Triode; Structure: NPN; Material: Silicon; Threshold Voltage: 4 V; Number of Pins: 3; Operating Temperature: -55~ 150(Celsius); Drain-Source Resistance: 1.3 Ω; Polarity: N-Channel; Power Dissipation: 150 W; Drain-Source Voltage (Vds): 900 V; Continuous Drain Current (IDS): 9.00 a; Input Capacitance (CISS): 2200PF @25V(Vds); Encapsulation: to-3p; Packing: Tube;	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: High Frequency; Power Level: Medium Power; Structure: NPN; OEM: Yes; Mqq: 10000;	Encapsulation Structure: SMD; Installation: SMD Triode; Working Frequency: Standard; Power Level: Standard; Function: Standard; Structure: Standard; Material: Silicon; Package: Sc-90, SOD-323f; Mounting Type: Surface Mount; Base Product Number: Pmeg4005; Technology: Schottky;	Encapsulation Structure: Standard; Installation: SMD Triode; Working Frequency: Standard; Power Level: Standard; Function: Standard; Structure: Standard; Material: Silicon; Package: to-236ab,to-236-3, Sc-59, Sot-23-3; Transistor Type: NPN - Pre-Biased; Base Product Number: Pdtd113; Current: 500mA;
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