Discrete Device · N-Type Semiconductor
30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn30f65m2 to-3pn
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
60
A
Collector Current
(Tc=100ºC)
30
A
Pulsed Collector Current
ICM
180
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40h65m2 to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
80
A
Collector Current
(Tc=100ºC)
40
A
Pulsed Collector Current
ICM
160
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±20
V
Collector Current
IC(T=25ºC)
120
A
Collector Current
(Tc=100ºC)
60
A
Pulsed Collector Current
ICM
180
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
40
A
Collector Current
(Tc=100ºC)
20
A
Pulsed Collector Current
ICM
60
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
40A 650V Trenchstop Insulated Gate Bipolar Transistor G40t65lbbn to-3pn
US$ 0.22
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum Drian-Source DC Voltage
VDS
650
V
Maximum Gate-Drain Voltage
VGS
±20
V
Drain Current(continuous)
ID(T=25ºC)
80
A
(T=100ºC)
40
A
Drain Current(Pulsed)
IDM
120
A
Single Pulse Avalanche Energy
EAS
90
mJ
Total Dissipation
T
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
2A 600V original factory power mosfet transistor
US$ 0.05-0.15
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Why choose us?
* Specilaze in IC for around 14 years
* 100% Tested before sale
* Cooperate with over 35 famous brands from domestic and international market
* Competitive and reasonable price
* Abundant inventory and short lead time about 3-7 days
* 1 Year warranty
* 24hrs supports from o
Discrete Device · N-Type Semiconductor
80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
160
A
Collector Current
(Tc=100ºC)
80
A
Pulsed Collector Current
ICM
240
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
12
A
Collector Current
(Tc=100ºC)
6
A
Pulsed Collector Current
ICM
35
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
1200
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
80
A
Collector Current
(Tc=100ºC)
40
A
Pulsed Collector Current
ICM
160
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
75A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc75f120m2 to-247plus
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
1200
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
150
A
Collector Current
(Tc=100ºC)
75
A
Pulsed Collector Current
ICM
300
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
-
What are the typical characteristics of N-Type Transistors?
N-Type Transistors are known for their high electron mobility and increased electrical conductivity compared to other semiconductors. These unique properties make them valuable in various electronic applications, providing efficiency and dependability in circuit design.
-
How can I identify reputable suppliers for N-Type Transistors in China?
Identifying reputable suppliers involves researching company backgrounds, validating certifications, and requesting product samples for quality testing. Look for established partnerships, transparent communications, and adherence to industry standards to ensure a reliable supply chain.
-
What advantages does wholesale purchase of N-Type Transistors offer?
Buyers gain cost efficiencies through bulk purchasing of N-Type Transistors, benefiting from discounted prices and scale of production. Wholesale transactions also provide flexibility in meeting specific demands and enable customization opportunities for tailored semiconductor solutions.
Discrete Device · N-Type Semiconductor
40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40f65m2 to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
80
A
Collector Current
(Tc=100ºC)
40
A
Pulsed Collector Current
ICM
160
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
LM317 · SMD · Integrated Circuits Device
Excellent Stability and Uniformity To247-P 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor
US$ 2.5-3
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
General Description
OST75N65HSMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.
Featu
- Shanghai Winture Electric Co., Ltd.
-
- Shanghai, China
- Contact Now
Discrete Device · N-Type Semiconductor
30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(TJ=25ºC)
60
A
Collector Current
(TJ=100ºC)
30
A
Pulsed Collector Current
ICM
180
A
Diode Continuous Forward Current
IF @TJ = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Manufacturer 4A 600V SVF4N60 plastic seal N-channel Transistor ST MCU
US$ 0.05-0.15
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Why choose us?
* Specilaze in IC for around 14 years
* 100% Tested before sale
* Cooperate with over 35 famous brands from domestic and international market
* Competitive and reasonable price
* Abundant inventory and short lead time about 3-7 days
* 1 Year warranty
* 24hrs supports from o
- CTC Technology Co., Ltd.
-
5(5.0)
"Fast Dispatch"Fast Dispatch - Guangdong, China
- Contact Now
Discrete Device · N-Type Semiconductor
15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
(TJ=100ºC)
15
A
Pulsed Collector Current
ICM
60
A
Diode Continuous Forward Current
IF @TJ = 100 °C
20
A
Diode Pulsed Current
IFM
80
A
T
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
High Voltage N-Channel Super Junction Power Mosfet Transistor
US$ 0.05-0.15
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
4A,650V N-CHANNEL MOSFET
General Description
SVF4N65T/F/M/MJ/D/K is an N-CHANNEL enhancement mode power MOS field effect transistor which is produced using Silan proprietary structure VDMOS technology.
These devices are widely used in AC-DC power suppliers,DC-DC converters and H-Bridge PWM
Discrete Device · N-Type Semiconductor
50A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg50t65dlbbw
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
(TJ=100ºC)
50
A
Pulsed Collector Current
ICM
150
A
Diode Continuous Forward Current
IF @TJ = 100 °C
100
A
Diode Pulsed Current
IFM
160
A
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
factory original 2A 650V adaptor mosfet transistor
US$ 0.05-0.15
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
Why choose us?
* Specilaze in electronic components for around 14 years
* 100% Tested before sale
* Cooperate with over 35 famous brands from domestic and international market
* Competitive and reasonable price
* Abundant inventory and short lead time about 3-7 days
* 1 Year warranty
* 24
- CTC Technology Co., Ltd.
-
5(5.0)
"Fast Delivery"Fast Delivery - Guangdong, China
- Contact Now
LM317 · SMD · Discrete Device
To220f 800W Osg80r650FF Single/Dual N Channel 30V PC Power Transistor
US$ 0.12-0.15
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
General Description
The high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The Generic series is optimized for
- Shanghai Winture Electric Co., Ltd.
-
- Shanghai, China
- Contact Now
Discrete Device · N-Type Semiconductor
Silicon NPN Triple Diffused Transistor 5200 to-3pl **%off
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
230
V
Collector- Emitter Voltage
VCEO
230
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
Ic
15
A
Base Current
IB
1.5
A
3PN Collector Dissipation
TC=25ºC
PC
120
W
3PL Collector Dissipation
TC=25ºC
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
ST · SMD · Integrated Circuits Device
Excellent Conduction and Switching Loss To247-F 800W Ost75n65hsmf 30V Manufacturer Trident Gate Bipolar Transistor
US$ 2.5-3
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
General Description
OST75N65HSMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.
Featu
- Shanghai Winture Electric Co., Ltd.
-
- Shanghai, China
- Contact Now
Discrete Device · N-Type Semiconductor
40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
1200
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
80
A
Collector Current
(Tc=100ºC)
40
A
Pulsed Collector Current
ICM
160
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±20
V
Collector Current
(TJ=100ºC)
60
A
Pulsed Collector Current
ICM
180
A
Diode Continuous Forward Current
IF @TJ = 100 °C
30
A
Diode Pulsed Current
IFM
180
A
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
160A 650V Trenchstop Insulated Gate Bipolar Transistor Dgcp160h65L2 to-247plus
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
240
A
Collector Current
(Tc=100ºC)
160
A
Pulsed Collector Current
ICM
480
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn40f65m2 to-3pn
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
80
A
Collector Current
(Tc=100ºC)
40
A
Pulsed Collector Current
ICM
160
A
Diode Continuous Forward Current
IF @TC = 100 °C
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
RoHS · N-Type Semiconductor · Discrete Device
Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor G50t65ds to-247s
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
650
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(T=25ºC)
100
A
Collector Current
(Tc=100ºC)
50
A
Pulsed Collector Current
ICM
200
A
Diode Continuous Forward Current
IF @TC = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Discrete Device · N-Type Semiconductor
40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d
US$ 0.01-1.5
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
1200
V
Gate- Emitter Voltage
VGES
±30
V
Collector Current
IC(TJ=25ºC)
80
A
Collector Current
(TJ=100ºC)
40
A
Pulsed Collector Current
ICM
160
A
Diode Continuous Forward Current
IF @TJ = 100 °
- Jiangsu Donghai Semiconductor Co.,Ltd
-
- Jiangsu, China
- IATF16949
- Contact Now
Optoelectronic Semiconductor · 2023+ · N-Type Semiconductor
Capsule Disc Type Phase Control Thyristor Kp Ordinary Series Kp1600A 2000V SCR Transistor
US$ 100
/ Piece
10 Pieces (MOQ)
10 Pieces (MOQ)
Capsule Disc Type Phase Control Thyristor Kp Ordinary Series Kp1600A 2000V SCR Transistor
Phase Control Thyristor
Introduction:
Phase control thyristor is a low loss switch semiconductor device.It has a wide voltage range,from 1000V-8000V,Current range 100A-5000A.As a high power electro
ULN2003 · DIP(Dual In-line Package) · Discrete Device
Uninterruptible Power Supplies To247-F 800W Ost75n65hsmf 30V Manufacturer Trident Gate Bipolar Transistor
US$ 2.5-3
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
General Description
OST75N65HSMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.
Featu
- Shanghai Winture Electric Co., Ltd.
-
- Shanghai, China
- Contact Now
PC817 · PGA(Pin Grid Array Package) · Discrete Device
Induction Converters To247-P 800W Ost75n65hsmf 30V Manufacturer Trident Gate Bipolar Transistor
US$ 2.5-3
/ Piece
5000 Pieces (MOQ)
5000 Pieces (MOQ)
General Description
OST75N65HSMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.
Featu
- Shanghai Winture Electric Co., Ltd.
-
- Shanghai, China
- Contact Now
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