N-Type Transistor

4,023 results for N-Type Transistor

RoHS · DIP(Dual In-line Package) · Element Semiconductor

82V 140A Nce82h140 Nce82h140d Nce N-Channel Enhancement Mode 220W Mosfet Transistor with to-220

US$ 0.38-0.437 / Piece
1000 Pieces  (MOQ)
Detailed Photos Product Description NCE provides N-channel SGT-I series power MOSFETs with breakdown voltage levels ranging from 30V to 250V. NCE's technology and excellent quality management ensure excellent product performance and reliability, and provide cost-effective solutions while reducing

N-Type Semiconductor · Element Semiconductor · SMD

60V 5A Nce6005as Nce N-Channel Enhancement Mode Power Mosfet Transistor м о п -т р а н з и с т о р

US$ 0.077-0.089 / Piece
5000 Pieces  (MOQ)
Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, reliabi

Discrete Device · N-Type Semiconductor

6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b

US$ 0.01-1.5 / Piece
5000 Pieces  (MOQ)
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed Collector Current ICM 35 A Diode Continuous Forward Current IF @TC = 100 °C

Discrete Device · Power Electronic Components · DIP(Dual In-line Package)

650V 21A N-Channel Super Junction Power Mosfet Transistor Nce65t180t with to-247

US$ 0.27-0.31 / Piece
1000 Pieces  (MOQ)
Detailed Photos Product Description NCE offers N-channel SJ-III series power MOSFETs with breakdown voltage ratings ranging from 500V to 800V, which are ideal for switching power supply applications due to their good on-resistance, very low gate charge, excellent switching speed, and competitive p

Element Semiconductor · Discrete Device · SMD

20V 6.5A Nce3416 Nce N-Channel Enhancement Mode Power Mosfet Transistor

US$ 0.042-0.046 / Piece
3000 Pieces  (MOQ)
Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, reliabi

650V Nce65t360K N-Channel Super Junction Power Mosfet Transistor for Power Factor Correction

US$ 0.342-0.393 / Piece
2500 Pieces  (MOQ)
Detailed Photos Product Description NCE offers N-channel SJ-III series power MOSFETs with breakdown voltage ratings ranging from 500V to 800V, which are ideal for switching power supply applications due to their good on-resistance, very low gate charge, excellent switching speed, and competitiv

Discrete Device · Power Electronic Components · SMD

60V 150A Nce N-Channel Enhancement Mode Power Mosfet Transistor Nce60h15ad

US$ 0.61-0.7 / Piece
2500 Pieces  (MOQ)
Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, reli

Discrete Device · Power Electronic Components · DIP(Dual In-line Package)

100V 108A Ncep01t11 Nce N-Channel Super Trench Power Mosfet Transistor with to-220

US$ 0.001-1.3 / Piece
2500 Pieces  (MOQ)
Detailed Photos Product Description NCE provides N-channel SGT-I series power MOSFETs with breakdown voltage levels ranging from 30V to 250V. NCE's technology and excellent quality management ensure excellent product performance and reliability, and provide cost-effective solutions while reducing

RoHS · SMD · Element Semiconductor

60V 50A Ncep6050aqu Nce N-Channel Super Trench Power Mosfet Transistor

US$ 0.001-0.138 / Piece
5000 Pieces  (MOQ)
Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, reliabi

Discrete Device · Power Electronic Components · SMD

30V 65A Ncep3065qu Nce N-Channel Super Trench Power Mosfet Transistor with Dfn3.3*3.3

US$ 0.001-0.138 / Piece
5000 Pieces  (MOQ)
Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, reliabi
  • QWhat are the typical characteristics of N-Type Transistors?

    N-Type Transistors are known for their high electron mobility and increased electrical conductivity compared to other semiconductors. These unique properties make them valuable in various electronic applications, providing efficiency and dependability in circuit design.

  • QHow can I identify reputable suppliers for N-Type Transistors in China?

    Identifying reputable suppliers involves researching company backgrounds, validating certifications, and requesting product samples for quality testing. Look for established partnerships, transparent communications, and adherence to industry standards to ensure a reliable supply chain.

  • QWhat advantages does wholesale purchase of N-Type Transistors offer?

    Buyers gain cost efficiencies through bulk purchasing of N-Type Transistors, benefiting from discounted prices and scale of production. Wholesale transactions also provide flexibility in meeting specific demands and enable customization opportunities for tailored semiconductor solutions.

Discrete Device · N-Type Semiconductor

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2

US$ 0.01-1.5 / Piece
5000 Pieces  (MOQ)
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 60 A Collector Current (TJ=100ºC) 30 A Pulsed Collector Current ICM 180 A Diode Continuous Forward Current IF @TJ = 100 °

100V 135A New Original Ncep039n10m Nce N-Channel Super Trench II Power Mosfet Transistor with to-220

US$ 0.43-0.48 / Piece
2500 Pieces  (MOQ)
Detailed Photos Product Description NCE offers N-Channel SGT-II series power MOSFETs with breakdown voltage ratings ranging from 30V to 120V. The ultra-low on-resistance ( RDS(on)) and ultra-low gate charge ( Qg ) features of the products, combined with advanced lightweight and compact packa

Discrete Device · N-Type Semiconductor

40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn40f65m2 to-3pn

US$ 0.01-1.5 / Piece
5000 Pieces  (MOQ)
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed Collector Current ICM 160 A Diode Continuous Forward Current IF @TC = 100 °C

N-Type Semiconductor · Element Semiconductor · SMD

150V 40A Nce1540K Nce N-Channel Enhancement Mode Power Mosfet Transistor

US$ 0.3-0.345 / Piece
2500 Pieces  (MOQ)
Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r

Discrete Device · Power Electronic Components · SMD

85V 320A Nce N-Channel Super Trench II Power Mosfet Transistor Ncep018n85ll with to-252

US$ 0.001-0.668 / Piece
5000 Pieces  (MOQ)
Detailed Photos Product Description NCE offers N-Channel SGT-II series power MOSFETs with breakdown voltage ratings ranging from 30V to 120V. The ultra-low on-resistance ( RDS(on)) and ultra-low gate charge ( Qg ) features of the products, combined with advanced lightweight and compact packages, f

Discrete Device · Power Electronic Components · SMD

120V 150A Ncep040n12D Nce N-Channel Super Trench II Power Mosfet Transistor with to-263

US$ 0.01-1.2 / Piece
800 Pieces  (MOQ)
Detailed Photos Product Description NCE offers N-Channel SGT-II series power MOSFETs with breakdown voltage ratings ranging from 30V to 120V. The ultra-low on-resistance ( RDS(on)) and ultra-low gate charge ( Qg ) features of the products, combined with advanced lightweight and compact packages

Discrete Device · Power Electronic Components · DIP(Dual In-line Package)

650V 4A Nce65t1K2f N-Channel Super Junction Power Mosfet Transistor with to-220f

US$ 0.483-0.559 / Piece
1000 Pieces  (MOQ)
Detailed Photos Product Description NCE offers N-channel SJ-III series power MOSFETs with breakdown voltage ratings ranging from 500V to 800V, which are ideal for switching power supply applications due to their good on-resistance, very low gate charge, excellent switching speed, and competi

N-Type Semiconductor · Element Semiconductor · DIP(Dual In-line Package)

China Suppliers 650V 11.5A to-263 to-220 to-220f Nce65t360f Integrated Circuit Electronic Componets Nce N-Channel Super Junction Power Mosfet Transistor

US$ 0.483-0.559 / Piece
1000 Pieces  (MOQ)
Detailed Photos Product Description NCE offers N-channel SJ-III series power MOSFETs with breakdown voltage ratings ranging from 500V to 800V, which are ideal for switching power supply applications due to their good on-resistance, very low gate charge, excellent switching speed, and competi

Discrete Device · Power Electronic Components · SMD

60V 100A Nce60h10K Nce N-Channel Enhancement Mode Power Mosfet Transistor

US$ 0.001-0.125 / Piece
2500 Pieces  (MOQ)
Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, reliabi

Discrete Device · N-Type Semiconductor

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn30f65m2 to-3pn

US$ 0.01-1.5 / Piece
5000 Pieces  (MOQ)
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed Collector Current ICM 180 A Diode Continuous Forward Current IF @TC = 100 °C

Discrete Device · Power Electronic Components · SMD

40V 110A Ncep40t11g Nce N-Channel Super Trench Power Mosfet Transistor with Dfn5*6

US$ 0.001-1.2 / Piece
5000 Pieces  (MOQ)
Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r

Discrete Device · Power Electronic Components · SMD

100V 35A DC/DC Converter Nce N-Channel Super Trench Power Mosfet Transistor Ncep0135ak with to-252

US$ 0.001-1.2 / Piece
2500 Pieces  (MOQ)
Detailed Photos Product Description NCE provides N-channel SGT-I series power MOSFETs with breakdown voltage levels ranging from 30V to 250V. NCE's technology and excellent quality management ensure excellent product performance and reliability, and provide cost-effective solutions while red

Discrete Device · Power Electronic Components · SMD

100V 35A Nce N-Channel Super Trench Power Mosfet Transistor Ncep01ND35AG with Dfn5*6

US$ 0.001-0.5 / Piece
5000 Pieces  (MOQ)
Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r

Discrete Device · N-Type Semiconductor

50A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg50t65dlbbw

US$ 0.01-1.5 / Piece
5000 Pieces  (MOQ)
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 50 A Pulsed Collector Current ICM 150 A Diode Continuous Forward Current IF @TJ = 100 °C 100 A Diode Pulsed Current IFM 160 A

Discrete Device · Power Electronic Components · SMD

20V 5A Nce8205I Nce N-Channel Enhancement Mode Power Mosfet Transistor with Tssop-8

US$ 0.001-0.092 / Piece
4000 Pieces  (MOQ)
Detailed Photos Product Description NCE provides P-type 20V~60V and N-type 18V~100V Dual (Dual) MOSFET products, by integrating two P-type or N-type power MOSFETs into a single package in parallel package, it greatly optimizes the product structure and provides new options for designers to s

Discrete Device · Power Electronic Components · SMD

30V 290A Nce30h29d Nce N-Channel Enhancement Mode Power Mosfet Transistor with to-263

US$ 0.001-0.125 / Piece
2500 Pieces  (MOQ)
Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, reliabi

Discrete Device · Power Electronic Components · SMD

40V 60A Nce4060K Nce N-Channel Enhancement Mode Power Mosfet Transistor

US$ 0.001-0.125 / Piece
2500 Pieces  (MOQ)
Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, reliabi

Discrete Device · Power Electronic Components · SMD

20V 30A Nce N-Channel Enhancement Mode Power Mosfet Transistor Nce2030K with to-252

US$ 0.01-0.345 / Piece
2500 Pieces  (MOQ)
Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize on-resistance, switching characteristics, r

Discrete Device · N-Type Semiconductor

15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220

US$ 0.01-1.5 / Piece
5000 Pieces  (MOQ)
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 15 A Pulsed Collector Current ICM 60 A Diode Continuous Forward Current IF @TJ = 100 °C 20 A Diode Pulsed Current IFM 80 A T

Discrete Device · Power Electronic Components · SMD

150V 170A Nce N-Channel Super Trench Power Mosfet Transistor Ncep15t14ll with Toll

US$ 0.001-0.668 / Piece
5000 Pieces  (MOQ)
Detailed Photos Product Description NCE offers N-Channel SGT-II series power MOSFETs with breakdown voltage ratings ranging from 30V to 120V. The ultra-low on-resistance ( RDS(on)) and ultra-low gate charge ( Qg ) features of the products, combined with advanced lightweight and compact packages, f
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