2"/3"/4" Vgf Indopant Indium Phosphide (InP) Substrates Wafers
| FOB Price: | US$100.00 / Piece |
|---|---|
| Min. Order: | 1 Piece |
| Min. Order | FOB Price |
|---|---|
| 1 Piece | US$100.00/ Piece |
| Port: | Qingdao, China |
|---|---|
| Payment Terms: | T/T, Western Union, Money Gram |
Product Description
Company Info
Product Description
| Product | Diameter (inch) | Type | Carrier concentration(cm-3) | Mobility (cm2 V-1s-1) | Resistivity (W.cm) | E.P.D. (cm-2) | ||||
| Undopant InP | 2/3 | N | (0.8-2)´1016 | (3.5- 4) ´103 | < 5´104 | |||||
| S-InP | 2 | N | (0.8-3)´1018 | (2.0-2.4) ´103 | < 3´104 | |||||
| (4-8)´1018 | (1.0-1.6) ´103 | <6´103 <1´103 | ||||||||
| 3/4 | (0.8-3)´1018 | (2.0-2.4) ´103 | < 5´104 | |||||||
| (4-8)´1018 | (1.0-1.6) ´103 | <6´103 <1´103 | ||||||||
| Zn-InP | 2/3 | P | (0.6-2) ´1018 | 70-90 | < 5´104 | |||||
| (3-6)´1018 | 50-70 | <5´103 | ||||||||
| Fe-InP | 2/3/4 | SI | >2000 | >1´107 | < 5´104 | |||||
| >2000 | >1´107 | < 1´104 | ||||||||
| others | ||||||||||
| Orientation | (100)/(111)±0.5° | Flatness(μm) | ||||||||
| TTV | Bow | Warp | ||||||||
| ≤12 | ≤12 | ≤15 | ||||||||
| 2" | 3" | 4" | ||||||||
| Thickness(mm) | 350±25/2 | 600±25/3" | 1000±25/4" | |||||||
| Primary flat length (mm) (mm) | 16±2 | 22±2 | 32.5±2.5 | |||||||
| Secondary flat length (mm) (mm) | 8±1 | 11±1 | 32.5±2.5 | |||||||
| Single or double polish, open and use, customer's request is accepted. | ||||||||||
We are one of largest manufacturers of InP wafer in China.
Contact us for more detail.
Address:
Cross in Jingjiu Street, Xinxiang, Henan, China
Business Type:
Manufacturer/Factory
Business Range:
Lights & Lighting, Metallurgy, Mineral & Energy
Management System Certification:
ISO 9001
Main Products:
GaAs, GaAs Wafer, GaAs Ingot
Company Introduction:
Shenzhou Crystal is founded in 1970, manufacturer of GaAs material with 100 highly skilled and dedicated employees, covers an area of 450 acres. We designs, develops, manufactures and distributes high-performance compound semiconductor substrates.
With the development of semiconductor material in the two generation and the three generation of semiconductor materials, Shenzhou aimed at high-end products, the use of new technologies, new processes, engaged in GaAs (GaAs) wafer, silicon carbide (SiC) wafer and other semiconductor materials production and processing, which is widely used in the field of Microelectronics (mobile communications, radar, satellite communications, precision guidance), optoelectronic field (laser, light-emitting diode), and solar energy fields, etc., mainly exported to Southeast Asia and Europe and the United States market.
With the development of semiconductor material in the two generation and the three generation of semiconductor materials, Shenzhou aimed at high-end products, the use of new technologies, new processes, engaged in GaAs (GaAs) wafer, silicon carbide (SiC) wafer and other semiconductor materials production and processing, which is widely used in the field of Microelectronics (mobile communications, radar, satellite communications, precision guidance), optoelectronic field (laser, light-emitting diode), and solar energy fields, etc., mainly exported to Southeast Asia and Europe and the United States market.
