High Voltage Semiconductor Mosfet
US$0.20 / Piece
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What is Extral Fast Charging Staition Aux Flyback Convert High Voltage Power Mosfet

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

660 Pieces US$0.20 / Piece

Sepcifications

  • Certification RoHS, ISO
  • Shape Metal Porcelain Tube
  • Shielding Type Sharp Cutoff Shielding Tube
  • Cooling Method Air Cooled Tube
  • Function Switch Transistor
  • Working Frequency High Frequency
  • Structure Planar
  • Encapsulation Structure Plastic Sealed Transistor
  • Power Level Medium Power
  • Material Silicon
  • Transport Package Carton
  • Specification 37*37*29CM
  • Trademark Orientalsemiconductor
  • Origin China
  • Description Extremely Low Switching Loss
  • Characteristics Excellent Stability and Uniformity
  • Applications PC Power
  • Industries LED Lighting
  • Type Fast EV Charging Station
  • Warranty 24 Months

Product Description

Product Description General Description OSG90R1K2xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications. ...

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High Voltage Semiconductor Mosfet Comparison
Transaction Info
Price US $ 0.2/ Piece US $ 0.3546-0.4123/ Piece US $ 0.0001-0.011/ Piece US $ 0.001-0.10/ Piece US $ 0.0069-0.0258/ Piece
Min Order 660 Pieces 3000000 Pieces 1 Pieces 10 Pieces 3000 Pieces
Trade Terms - - - - -
Payment Terms T/T T/T, D/P, Western Union, Paypal, Money Gram T/T, Western Union, Paypal T/T, Western Union, Paypal, Money Gram T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification RoHS, ISO RoHS, CE, ISO, CCC, UL RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC
Management System Certification ISO 9001, ISO 14001 - GMP GMP -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe Domestic North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe Domestic
Annual Export Revenue - - - - -
Business Model Own Brand - OEM OEM -
Average Lead Time Off-season: 3-6 Month(s)
Peak-season: 1 Month(s)
- - - -
Product Attributes
Specification
Shape: Metal Porcelain Tube;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Air Cooled Tube;
Function: Switch Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Material: Silicon;
Description: Extremely Low Switching Loss;
Characteristics: Excellent Stability and Uniformity;
Applications: PC Power;
Industries: LED Lighting;
Type: Fast EV Charging Station;
Warranty: 24 Months;
Shape: Metal Porcelain Tube;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Switch Transistor;
Working Frequency: Low Frequency;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Small Power;
Material: Silicon;
Maximum Repetitive Peak Reverse Voltage: 45V;
Maximum RMS Voltage: 32V;
Maximum DC Blocking Voltage: 45V;
Maximum Average Forward Rectified Curren: 30A;
Case: QC3q, Molded Plastic Body Molding Compound;
Terminal: Solderable Per Jesd22-B102;
Weight: 4.86g;
Shape: Subminiature;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor;
Working Frequency: High Frequency;
Structure: Alloy;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
Mounting Type: Through Hole;
Package / Case: to-226-3, to-92-3 (to-226AA);
Supplier Device Package: to-92;
Base Product Number: 2n39;
Description: Bjt to-92 40V 200mA;
Shape: Metal Porcelain Tube;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Material: Germanium;
Mfr: Standard;
Package: SMD DIP;
Product Status: Active;
Detailed Description: Zener Diode;
Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Pppm: 200W;
Ifsm(Uni): 20A;
Case: SOD-123FL;
Maximum Clamping Voltage: 93.6V;
Maximum Peak Pulse Current: 2.1A;
Supplier Name

Shanghai Winture Electric Co., Ltd.

China Supplier - Gold Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier