What is To247-4L Ost60n65h4ewf Vces-650V Maximum Junction Temperature175 Power IGBT

Name: To247-4L Ost60n65h4ewf Vces-650V Maximum Junction Temperature175 Power IGBT
Uploaded: 2023-05-07T16:50:56+08:00
Description: General Description OST60N65H4EWF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent sw

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Price

Min. Order Reference FOB Price

450 Pieces US$0.20-0.60 / Piece

Sepcifications

Certification RoHS, ISO
Shape ST
Shielding Type Remote Cut-Off Shielding Tube
Cooling Method Air Cooled Tube
Function Switch Transistor
Working Frequency High Frequency
Structure Planar
Encapsulation Structure Chip Transistor
Power Level High Power
Material Silicon
Transport Package Carton
Specification 35x30x37cm
Trademark Orientalsemi
Origin China

Product Description

General Description OST60N65H4EWF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters. ...

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Shanghai Winture Electric Co., Ltd.

Gold Member Since 2022

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Main Products Mosfet Transistor Power Semi Conductor, EV Charger Power Mosfet Transistor Power Semi Co, High Voltage Super Junction Mosfet Trans Istor, New Energy Vehicle DC Charging Mosfet Transistor, 5g Base Station Power Supply Mosfet Transistor, Photovoltaic Inverter Mosfet Transistor, Energy Storage Mosfet Transistor, Data Center Server Mosfet Transistor, Industrial Lighting Power Mosfet, DC Charging Power Mosfet Tansistor
Registered Capital 10000000 RMB
Plant Area 501~1000 square meters
Management System Certification ISO 9001, ISO 14001
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: 3-6 months

IGBT Comparison

	Quick View To247-4L Ost60n65h4ewf Vces-650V Maximum Junction Temperature175 Power IGBT Contact Now	Sqj951ep-T1_Be3 Mosfet Transistor Array 2 P-Channel (Dual) 30V 30A (Tc) 56W (Tc) SMD Powerpak® So-8 Dual Sqj951ep Sqj990 Sqj910 Sqj912 Sqj914 Series Contact Now	Good Price Irf3205pbf N-Channel Transistor 55 V 110A (Tc) 200W (Tc) DIP to-220ab Irf3710 Irf3205 Irf3710 Irf3415 Irf341 Series Contact Now	Quick View 100V N-Channel Power MOSFET Fully Characterized Capacitance and Avalanche PDFN 5x6-8L / Fetures Applications Silicongear-DG100N14Q Contact Now	Quick View 120V N-Channel Power MOSFET Low Miller Capacitance Fully Characterized Capacitance TO-220AB / Fetures Applications Silicongear-DG120N02P Contact Now

Transaction Info
	Quick View To247-4L Ost60n65h4ewf Vces-650V Maximum Junction Temperature175 Power IGBT Contact Now	Sqj951ep-T1_Be3 Mosfet Transistor Array 2 P-Channel (Dual) 30V 30A (Tc) 56W (Tc) SMD Powerpak® So-8 Dual Sqj951ep Sqj990 Sqj910 Sqj912 Sqj914 Series Contact Now	Good Price Irf3205pbf N-Channel Transistor 55 V 110A (Tc) 200W (Tc) DIP to-220ab Irf3710 Irf3205 Irf3710 Irf3415 Irf341 Series Contact Now	Quick View 100V N-Channel Power MOSFET Fully Characterized Capacitance and Avalanche PDFN 5x6-8L / Fetures Applications Silicongear-DG100N14Q Contact Now	Quick View 120V N-Channel Power MOSFET Low Miller Capacitance Fully Characterized Capacitance TO-220AB / Fetures Applications Silicongear-DG120N02P Contact Now
Price	US $ 0.20-0.60/ Piece	US $ 0.01-1.00/ Piece	US $ 0.10-0.30/ Piece	US $ 0.13-1.00/ Piece	US $ 0.16-1.00/ Piece
Min Order	450 Pieces	1 Pieces	1 Pieces	1 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T	T/T, Western Union, Paypal	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS, ISO	RoHS, CE	-	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	ISO 9001, ISO 14001	GMP	GMP	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	OEM	OEM	OEM, ODM	OEM, ODM
Average Lead Time	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	-	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Function: Mosfet; Fet Type: 2 P-Channel (Dual); Fet Feature: Standard; Drain to Source Voltage (Vdss): 30V; Current - Continuous Drain (ID): 30A (Tc); RDS on (Max) @ ID, Vgs: 17mohm @ 7.5A, 10V; Vgs(Th) (Max) @ ID: 2.5V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 50nc @ 10V; Input Capacitance (CISS) (Max) @ Vds: 1680PF @ 10V; Power - Max: 56W (Tc); Operating Temperature: -55°c ~ 175°c (Tj); Mounting Type: Surface Mount; Supplier Device Package: Powerpak® So-8 Dual; Base Product Number: Sqj951;	Shape: DIP; Function: Mosfet; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 55 V; Continuous Drain (ID) @ 25°c: 110A (Tc); Drive Voltage (Max RDS on, Min RDS on): 10V; RDS on (Max) @ ID, Vgs: 8mohm @ 62A, 10V; Vgs(Th) (Max) @ ID: 4V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 146 Nc @ 10 V; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 3247 PF @ 25 V; Power Dissipation (Max): 200W (Tc); Operating Temperature: -55°c ~ 175°c (Tj); Mounting Type: Through Hole; Supplier Device Package: to-220-3;	Function: Microwave Transistor, Switch Transistor; Working Frequency: Low Frequency; Structure: Planar; Encapsulation Structure: PDFN 5x6-8L; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Function: Microwave Transistor, Switch Transistor; Working Frequency: Low Frequency; Structure: Planar; Encapsulation Structure: TO-220AB; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;
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