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To263 Sfs280n10kf Vds-100 ID-800A RDS (ON) -2.1milliohm Qg-245nc Switching Voltage Regulator Power Mosfet pictures & photos

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What is To263 Sfs280n10kf Vds-100 ID-800A RDS (ON) -2.1milliohm Qg-245nc Switching Voltage Regulator Power Mosfet

Name: To263 Sfs280n10kf Vds-100 ID-800A RDS (ON) -2.1milliohm Qg-245nc Switching Voltage Regulator Power Mosfet
Uploaded: 2023-05-07T16:50:24+08:00
Description: General Description FSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics.

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About this Item

Price

Min. Order Reference FOB Price

800 Pieces US$0.30-0.50 / Piece

Sepcifications

Certification RoHS, ISO
Shape Metal Porcelain Tube
Shielding Type Sharp Cutoff Shielding Tube
Cooling Method Air Cooled Tube
Function High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency High Frequency
Structure Diffusion
Encapsulation Structure Chip Transistor
Power Level High Power
Material Silicon
Transport Package Air
Specification 35x37x30cm
Trademark Orientalsemi
Origin China

Product Description

General Description FSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially designed to use in motor control systems with driving voltage of ...

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Shanghai Winture Electric Co., Ltd.

Gold Member Since 2022

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Main Products Mosfet Transistor Power Semi Conductor, EV Charger Power Mosfet Transistor Power Semi Co, High Voltage Super Junction Mosfet Trans Istor, New Energy Vehicle DC Charging Mosfet Transistor, 5g Base Station Power Supply Mosfet Transistor, Photovoltaic Inverter Mosfet Transistor, Energy Storage Mosfet Transistor, Data Center Server Mosfet Transistor, Industrial Lighting Power Mosfet, DC Charging Power Mosfet Tansistor
Registered Capital 10000000 RMB
Plant Area 501~1000 square meters
Management System Certification ISO 9001, ISO 14001
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: 3-6 months

Mosfet Comparison

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Transaction Info
	Quick View To263 Sfs280n10kf Vds-100 ID-800A RDS (ON) -2.1milliohm Qg-245nc Switching Voltage Regulator Power Mosfet Contact Now	Quick View Hjl 1n5822 Schottky Diode Manufacturer 3A 45V SMA Ss34 K34 Transistors Factory in Stock Contact Now	Quick View Hjl Sr2100 Schottky Diode Manufacturer 2A 100V Ss210 K210 Transistors Factory in Stock Contact Now	Quick View Original Mosfet Irf7416trpbf P-Channel 30V 10A 2.5W 8-So Transistors Irf7416 Electronic Component Contact Now	Quick View Original Irf4905strlpbf Mosfet P-Channel 55V 42A 170W D2pak Transistors Irf4905 Electronic Component Contact Now
Price	US $ 0.30-0.50/ Piece	US $ 0.006-0.01/ Piece	US $ 0.006-0.01/ Piece	US $ 0.39-0.44/ Piece	US $ 0.78-0.95/ Piece
Min Order	800 Pieces	10 Pieces	10 Pieces	10 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Product Certification	RoHS, ISO	RoHS, CE, ISO	RoHS, CE, ISO	RoHS	RoHS
Management System Certification	ISO 9001, ISO 14001	ISO 9001	ISO 9001	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	-	-	-	-
Average Lead Time	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	-	-	-	-
Product Attributes
Specification	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Diffusion; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: -; Shielding Type: -; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: -; Power Level: -; Material: -;	Shape: -; Shielding Type: -; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: -; Power Level: -; Material: -;
Supplier Name	Shanghai Winture Electric Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.
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