Mosfet

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UPS Energy Converter Fast Switched Modevds-80V ID-840A RDS (ON) -2.6milliohm Qg-148.1nc Sfgmos To263 Sfg280n08kf Enhancemenn-Channel Mosfet pictures & photos

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What is UPS Energy Converter Fast Switched Modevds-80V ID-840A RDS (ON) -2.6milliohm Qg-148.1nc Sfgmos To263 Sfg280n08kf Enhancemenn-Channel Mosfet

Name: UPS Energy Converter Fast Switched Modevds-80V ID-840A RDS (ON) -2.6milliohm Qg-148.1nc Sfgmos To263 Sfg280n08kf Enhancemenn-Channel Mosfet
Uploaded: 2024-05-17T09:50:39+08:00
Description: General Description SFGMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The h

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Price

Min. Order Reference FOB Price

800 Pieces US$0.10-0.60 / Piece

Sepcifications

Certification RoHS, ISO
Shape ST
Shielding Type Remote Cut-Off Shielding Tube
Cooling Method Air Cooled Tube
Function Switch Transistor
Working Frequency High Frequency
Structure Planar
Encapsulation Structure Chip Transistor
Power Level High Power
Material Germanium
Transport Package Air
Trademark Orientalsemi

Product Description

General Description SFGMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially optimized for high systems with gate driving voltage greater than 10V. ...

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Shanghai Winture Electric Co., Ltd.

Gold Member Since 2022

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Main Products Mosfet Transistor Power Semi Conductor, EV Charger Power Mosfet Transistor Power Semi Co, High Voltage Super Junction Mosfet Trans Istor, New Energy Vehicle DC Charging Mosfet Transistor, 5g Base Station Power Supply Mosfet Transistor, Photovoltaic Inverter Mosfet Transistor, Energy Storage Mosfet Transistor, Data Center Server Mosfet Transistor, Industrial Lighting Power Mosfet, DC Charging Power Mosfet Tansistor
Registered Capital 10000000 RMB
Plant Area 501~1000 square meters
Management System Certification ISO 9001, ISO 14001
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: 3-6 months

Mosfet Comparison

	Quick View UPS Energy Converter Fast Switched Modevds-80V ID-840A RDS (ON) -2.6milliohm Qg-148.1nc Sfgmos To263 Sfg280n08kf Enhancemenn-Channel Mosfet Contact Now	Quick View Silicon Carbide Power MOSFET(N-Channel Enhancement) Halogen free, RoHS compliant TO-247-4L Fetures Applications YJD212040NCFGHQ Contact Now	Quick View Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 63A RDS(on) 40mΩ TO-247AB Fetures Applications YJD212040NCTG1Q Contact Now	CSD19537q3t N-Channel 100 V 50A (Ta) 2.8W (Ta) , 83W (Tc) SMD Mosfet Transistor 8-Vson CSD19537q3 CSD19537 Contact Now	Quick View High blocking voltage Silicon Carbide Power MOSFET(N-Channel Enhancement) TO-247-4L Fetures Applications YJD212060NCFGHQ Contact Now

Transaction Info
	Quick View UPS Energy Converter Fast Switched Modevds-80V ID-840A RDS (ON) -2.6milliohm Qg-148.1nc Sfgmos To263 Sfg280n08kf Enhancemenn-Channel Mosfet Contact Now	Quick View Silicon Carbide Power MOSFET(N-Channel Enhancement) Halogen free, RoHS compliant TO-247-4L Fetures Applications YJD212040NCFGHQ Contact Now	Quick View Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 63A RDS(on) 40mΩ TO-247AB Fetures Applications YJD212040NCTG1Q Contact Now	CSD19537q3t N-Channel 100 V 50A (Ta) 2.8W (Ta) , 83W (Tc) SMD Mosfet Transistor 8-Vson CSD19537q3 CSD19537 Contact Now	Quick View High blocking voltage Silicon Carbide Power MOSFET(N-Channel Enhancement) TO-247-4L Fetures Applications YJD212060NCFGHQ Contact Now
Price	US $ 0.10-0.60/ Piece	US $ 0.82/ Piece	US $ 0.78/ Piece	US $ 0.01-1.00/ Piece	US $ 0.81/ Piece
Min Order	800 Pieces	1000 Pieces	1000 Pieces	1 Pieces	1000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS, ISO	RoHS	RoHS	-	RoHS
Management System Certification	ISO 9001, ISO 14001	-	-	GMP	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	OEM, ODM	OEM, ODM	OEM	OEM, ODM
Average Lead Time	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Germanium;	Function: Switch Transistor; Encapsulation Structure: TO247-4L; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Function: Switch Transistor; Encapsulation Structure: TO-247AB; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Shape: SMD; Cooling Method: N/a; Function: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 100 V; Current - Continuous Drain (ID) @ 25c: 50A (Ta); Drive Voltage (Max RDS on, Min RDS on): 6V, 10V; RDS on (Max) @ ID, Vgs: 14.5mohm @ 10A, 10V; Vgs(Th) (Max) @ ID: 3.6V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 21 Nc @ 10 V; Vgs (Max): ±20V; Mounting Type: Surface Mount; Package / Case: 8-Vson; Supplier Device Package: 8-Powervdfn; Input Capacitance (CISS) (Max) @ Vds: 1680 PF @ 50 V; Power Dissipation (Max): 2.8W (Ta), 83W (Tc); Base Product Number: CSD19537q3; Operating Temperature: -55°c ~ 150°c (Tj);	Function: Switch Transistor; Encapsulation Structure: TO247-4L; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;
Supplier Name	Shanghai Winture Electric Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	Dongguan Merry Electronic Co., Ltd.
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