What is 8inch Customization Size Si Substrate Silicon Wafer

Name: 8inch Customization Size Si Substrate Silicon Wafer
Uploaded: 2024-04-19T09:15:06+08:00
Description: Product Description Product Parameters Use reference value Item Specification Diameter 150mm 200mm 300mm Type P/N P/N P/N Notch SEMI/JEIDA Notch/OF Notch Thickness(μm) 675±25/625±2

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Price

Min. Order Reference FOB Price

50 pc US$20.00 / pc

Sepcifications

Manufacturing Technology Integrated Circuits Device
Material Compound Semiconductor
Type P-type Semiconductor
Package Semi Standard
Signal Processing Na
Application Equipment
Model Custimize
Batch Number Na
Brand Fsm
Transport Package Semi Standard
Specification TBD
Trademark FSM
Origin China
Growth Method CZ
Crystal Orientation 100
Dopant Boron
Resistivity 1-100Ω
Frront Side Polished
Edge Polished

Product Description

Product Description Product Parameters Use reference value Item Specification Diameter 150mm 200mm 300mm Type P/N P/N P/N Notch SEMI/JEIDA Notch/OF Notch Thickness(μm) 675±25/625±25 725±25 725±25 Surface Polished Polished Polished Inside ...

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Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Since 2024

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products Silicon Wafer, Test Wafer, Dummy Wafer
Number of Employees 34
Year of Establishment 2013-10-29
Management System Certification ISO 29001
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Silicon Wafer Comparison

	Quick View 8inch Customization Size Si Substrate Silicon Wafer Contact Now	8A 700V N-Channel Enhancement Mode Power Mosfet F8n70 to-220f Contact Now	80A 200V Fast Recovery Diode Mur8020CT to-3pn Contact Now	50A 650V Trenchstop Insulated Gate Bipolar Transistor G50t65ds to-247s Contact Now	Fixed Inductor 1.5mh 430mA 3.8 Ohm Th - Rlb9012-152kl Contact Now

Transaction Info
	Quick View 8inch Customization Size Si Substrate Silicon Wafer Contact Now	8A 700V N-Channel Enhancement Mode Power Mosfet F8n70 to-220f Contact Now	80A 200V Fast Recovery Diode Mur8020CT to-3pn Contact Now	50A 650V Trenchstop Insulated Gate Bipolar Transistor G50t65ds to-247s Contact Now	Fixed Inductor 1.5mh 430mA 3.8 Ohm Th - Rlb9012-152kl Contact Now
Price	US $ 20/ pc	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	Negotiable
Min Order	50 pc	5000 Pieces	5000 Pieces	5000 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T	L/C, T/T	L/C, T/T	T/T
Quality Control
Management System Certification	ISO 29001	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 9000, ISO 14000, ISO 20000
Trade Capacity
Export Markets	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	North America, South America, Europe, Southeast Asia/ Mideast
Annual Export Revenue	-	-	-	-	-
Business Model	-	Own Brand	Own Brand	Own Brand	-
Average Lead Time	-	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	-
Product Attributes
Specification	Manufacturing Technology: Integrated Circuits Device; Material: Compound Semiconductor; Type: P-type Semiconductor; Package: Semi Standard; Signal Processing: Na; Application: Equipment; Model: Custimize; Batch Number: Na; Brand: Fsm; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: N-type Semiconductor; Package: to-220f; Application: Power Supply; Model: F8n70; Batch Number: 2021; Brand: Wxdh; Voltage: 700V; Current: 8A;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-3pn; Application: Switching Power Supply; Model: Mur8020CT; Batch Number: 2021; Brand: Wxdh; Voltage: 200V; Current: 80A;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-247s; Application: Inverter Welding Machine, UPS; Model: G50t65ds; Batch Number: 2021; Brand: Wxdh; Voltage: 650V; Current: 50A;	Manufacturing Technology: Inducotr; Material: Mega; Type: Power Inductor; Package: DIP; Signal Processing: Analog Digital Composite and Function; Application: Radio; Model: Power Inductor; Batch Number: 2023+; Brand: Bourns;
Supplier Name	Fine Silicon Manufacturing(Shanghai)Ltd.	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Simentor Electronic Limited
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