Mosfet 200V

US$0.042-0.052 / Piece

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Discrete Component G01n20L 200V 2A Sot-23-3L Mosfet for Pd pictures & photos

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What is Discrete Component G01n20L 200V 2A Sot-23-3L Mosfet for Pd

Name: Discrete Component G01n20L 200V 2A Sot-23-3L Mosfet for Pd
Uploaded: 2022-05-21T00:37:54+08:00
Description: Discrete Component G01N20L 200V 2A SOT-23-3L Mosfet for Pd General Description The G01N20L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable f

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Price

Min. Order Reference FOB Price

20 Pieces US$0.042-0.052 / Piece

Sepcifications

Certification RoHS, ISO
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Medium Power
Material Plastic
Transport Package Carton
Specification SOT-23 package
Trademark GOFORD
Origin China
Spq 3000/Reel

Product Description

Discrete Component G01N20L 200V 2A SOT-23-3L Mosfet for Pd General Description The G01N20L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. General Features High power and current ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Mosfet 200V Comparison

	Quick View Discrete Component G01n20L 200V 2A Sot-23-3L Mosfet for Pd Contact Now	CSD19537q3t N-Channel 100 V 50A (Ta) 2.8W (Ta) , 83W (Tc) SMD Mosfet Transistor 8-Vson CSD19537q3 CSD19537 Contact Now	Quick View High blocking voltage Silicon Carbide Power MOSFET(N-Channel Enhancement) TO-247-4L Fetures Applications YJD212060NCFGHQ Contact Now	Quick View Silicon Carbide Power MOSFET(N-Channel Enhancement) High speed switching TO-263-7L Fetures Applications YJD212060B7GHQ Contact Now	Quick View Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 78A RDS(on) 40mΩ TO-247AB Fetures Applications YJD212040NCTGH2Q Contact Now

Transaction Info
	Quick View Discrete Component G01n20L 200V 2A Sot-23-3L Mosfet for Pd Contact Now	CSD19537q3t N-Channel 100 V 50A (Ta) 2.8W (Ta) , 83W (Tc) SMD Mosfet Transistor 8-Vson CSD19537q3 CSD19537 Contact Now	Quick View High blocking voltage Silicon Carbide Power MOSFET(N-Channel Enhancement) TO-247-4L Fetures Applications YJD212060NCFGHQ Contact Now	Quick View Silicon Carbide Power MOSFET(N-Channel Enhancement) High speed switching TO-263-7L Fetures Applications YJD212060B7GHQ Contact Now	Quick View Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 78A RDS(on) 40mΩ TO-247AB Fetures Applications YJD212040NCTGH2Q Contact Now
Price	US $ 0.042-0.052/ Piece	US $ 0.01-1.00/ Piece	US $ 0.81/ Piece	US $ 0.76/ Piece	US $ 0.791/ Piece
Min Order	20 Pieces	1 Pieces	1000 Pieces	1000 Pieces	1000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS, ISO	-	RoHS	RoHS	RoHS
Management System Certification	ISO 9001	GMP	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	OEM	OEM, ODM	OEM, ODM	OEM, ODM
Average Lead Time	Off-season: 1 Month(s)	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Plastic; Spq: 3000/Reel;	Shape: SMD; Cooling Method: N/a; Function: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 100 V; Current - Continuous Drain (ID) @ 25c: 50A (Ta); Drive Voltage (Max RDS on, Min RDS on): 6V, 10V; RDS on (Max) @ ID, Vgs: 14.5mohm @ 10A, 10V; Vgs(Th) (Max) @ ID: 3.6V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 21 Nc @ 10 V; Vgs (Max): ±20V; Mounting Type: Surface Mount; Package / Case: 8-Vson; Supplier Device Package: 8-Powervdfn; Input Capacitance (CISS) (Max) @ Vds: 1680 PF @ 50 V; Power Dissipation (Max): 2.8W (Ta), 83W (Tc); Base Product Number: CSD19537q3; Operating Temperature: -55°c ~ 150°c (Tj);	Function: Switch Transistor; Encapsulation Structure: TO247-4L; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Function: Switch Transistor; Encapsulation Structure: TO-263-7L; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Function: Switch Transistor; Encapsulation Structure: TO-247AB; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;
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