IC Transistor 3400 30V 5.6A Power Mosfet Module pictures & photos

IC Transistor 3400 30V 5.6A Power Mosfet Module

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Price

Min. Order Reference FOB Price

100 Pieces Negotiable

Sepcifications

Certification RoHS, ISO
Shape SMD
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Small Power
Material Silicon
Transport Package Reel, with Antistatic Alluminum Foil Bag
Trademark GOFORD
Origin China
Vdss 30V
ID 5.6A
RDS 23 Mr
Pd 1.4W
Package Sot-23
Stock in Stock
Sample Available
Lead Free Status Pb-Free
Spq 3000PCS/Reel

Product Description

Product Description IC Transistor 3400 30V 5.6A POWER MOSFET Module Part Number 3400 VDSS 30V ID 5.6A RDS 23 mΩ @ vgs=4.5V Vth 0.95V Package SOT-23 Ciss 820 pF Crss 77 pF Datasheet You may like For more products details, please contact us ! Packaging &...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

3400 Mosfet Comparison

	IC Transistor 3400 30V 5.6A Power Mosfet Module Contact Now	P80NF55-08 STP80NF55-08 80NF55 Transistor Mosfet Contact Now	Uln2803adwr Sop-18 500mA Transistor Darlington Uln2803A Contact Now	Irf540 New Original Offer to-220 33A 100V Irf540npbf Mosfet Irf540n Contact Now	Quick View Field Effect Transistor Hy4008W to-247 80V200A N-Channel Enhancement Mode Mosfet Contact Now

Transaction Info
	IC Transistor 3400 30V 5.6A Power Mosfet Module Contact Now	P80NF55-08 STP80NF55-08 80NF55 Transistor Mosfet Contact Now	Uln2803adwr Sop-18 500mA Transistor Darlington Uln2803A Contact Now	Irf540 New Original Offer to-220 33A 100V Irf540npbf Mosfet Irf540n Contact Now	Quick View Field Effect Transistor Hy4008W to-247 80V200A N-Channel Enhancement Mode Mosfet Contact Now
Price	Negotiable	US $ 2.595-3.21/ Piece	US $ 0.07-0.08/ Piece	US $ 0.30-0.40/ Piece	US $ 0.75/ Piece
Min Order	100 Pieces	500 Pieces	500 Pieces	100 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	RoHS, ISO	RoHS	RoHS, CE	RoHS	RoHS
Management System Certification	ISO 9001	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	-	-	-	-
Average Lead Time	Off-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Shape: SMD; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: 30V; ID: 5.6A; RDS: 23 Mr; Pd: 1.4W; Package: Sot-23; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 3000PCS/Reel;	Shape: ST; Function: Switch Transistor; Working Frequency: High Frequency; Encapsulation Structure: Chip Transistor; Material: Germanium; Channel Type: N-Channel; Package Shape: Cer-DIP/Ceramic in-Line; Product Number: STP80NF55; Configuration: Single with Built-in Diode; Samacsys Description: STP80NF55-06 N-Channel Mosfet Transistor, 80 a; Fet Technology: Metal-Oxide Semiconductor; Power Dissipation-Max (ABS): 210 W; Subcategory: Fet General Purpose Power; Polarity/Channel Type: N-Channel; Product: STP80n;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor; Working Frequency: Overclocking; Structure: Alloy; Encapsulation Structure: Glass Sealed Transistor; Power Level: Medium Power; Material: Iron and Plastic; Brand Name: Original; Product Number: Uln2803adwr; Detailed Description: Bipolar (Bjt) Transistor Array 8 NPN Darlington; Transistor Type: 8 NPN Darlington;	Shape: ST; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: Enhanced; Encapsulation Structure: Chip Transistor; Material: Germanium; Quality: Good; Operating Temperature: Standard; Lead Free Status: RoHS Compliant; Installation Type: Through Hole; Channel Type: N-Channel; Applications: Lighting Electronics, Medical Elect; Mounting Type: Insert Plate Welding; Fet Type: Mosfet N-Channel, Metal Oxide;	Shape: ST; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: Depletion Type; Encapsulation Structure: Chip Transistor; Material: Germanium; Quality: Good; Operating Temperature: Standard; Lead Free Status: RoHS Compliant; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post; Channel Type: N-Channel; Package Shape: Cer-DIP/Ceramic in-Line; Use: a / Wide Band Amplification;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.
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