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US$0.165-0.21 / Piece

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G110n06K 55V 110A Ceu6056 Alternative Part Transistor Mosfet with RoHS Certificate pictures & photos

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What is G110n06K 55V 110A Ceu6056 Alternative Part Transistor Mosfet with RoHS Certificate

Name: G110n06K 55V 110A Ceu6056 Alternative Part Transistor Mosfet with RoHS Certificate
Uploaded: 2022-01-17T14:42:49+08:00
Description: Product Description G110N06 55V 110A CEU6056 alternative part transistor mosfet Part Number G110N06 VDSS 55V ID 110A RDS 5.2mΩ @ vgs=10V Vth 1~2V Package TO-252 Ciss 5538pF Crss 304 pF Datasheet

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About this Item

Price

Min. Order Reference FOB Price

20 Pieces US$0.165-0.21 / Piece

Sepcifications

Certification RoHS, ISO
Shape SMD
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level High Power
Material Silicon
Transport Package Carton
Trademark GOFORD
Origin China
Vdss 55V
ID 110A
RDS 5.2 Mr
Pd 120W
Package to-252
Stock in Stock
Sample Available
Lead Free Status Pb-Free
Spq 2500PCS/Reel

Product Description

Product Description G110N06 55V 110A CEU6056 alternative part transistor mosfet Part Number G110N06 VDSS 55V ID 110A RDS 5.2mΩ @ vgs=10V Vth 1~2V Package TO-252 Ciss 5538pF Crss 304 pF Datasheet You may like For more products details, please contact us ! ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Electronic Component Comparison

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Transaction Info
	Quick View G110n06K 55V 110A Ceu6056 Alternative Part Transistor Mosfet with RoHS Certificate Contact Now	Electronic Tube Itk5-1 for Hf-Huttinger Machine Contact Now	Hf Valve Itl5-1 for Dielectric Heating Machine Contact Now	Power Triode Yu108/ Yu-108 for RF Welding Machine Contact Now	Quick View Ihw20n120r2 Induction Cooker Power Transistor 20A/1200V H20r1202 Contact Now
Price	US $ 0.165-0.21/ Piece	US $ 800.00-1,500.00/ Piece	US $ 800.00-1,500.00/ Piece	US $ 500.00-2,000.00/ Piece	US $ 0.30-0.66/ Piece
Min Order	20 Pieces	1 Pieces	1 Pieces	1 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T, Western Union, Money Gram	L/C, T/T, Western Union, Money Gram	L/C, T/T, Western Union, Money Gram	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	RoHS, ISO	-	-	-	RoHS
Management System Certification	ISO 9001	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	-	-	-	-
Average Lead Time	Off-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Shape: SMD; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: High Power; Material: Silicon; Vdss: 55V; ID: 110A; RDS: 5.2 Mr; Pd: 120W; Package: to-252; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 2500PCS/Reel;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Water Cooled Tube; Function: High Frequency Generator for Oscillator; Working Frequency: High Frequency; Structure: Metal- Ceramic; Encapsulation Structure: Metal- Ceramic; Power Level: High Power; Material: Metal- Ceramic;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: High Frequency Generator for Oscillator; Working Frequency: High Frequency; Structure: Metal- Ceramic; Encapsulation Structure: Metal- Ceramic; Power Level: High Power; Material: Metal- Ceramic;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: High Frequency Generator for Oscillator; Working Frequency: High Frequency; Structure: Metal- Ceramic; Encapsulation Structure: Metal- Ceramic; Power Level: High Power; Material: Metal- Ceramic;	Shape: ST; Function: Switch Transistor, IGBT; Working Frequency: High Frequency; Structure: Diffusion; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; D/C: 20+; Installation Style: Through Hole; Subcategory: IGBT; Package: Tube; Product Category: IGBT Transistor; Description: IGBT Transistors Reverse Conduct IGBT 1200V 20A; Product Type: IGBT Transistor; Polarity/Channel Type: N-Channel;
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