Factory Directly N-Channel Trench Mosfet of Sot-23-3L 100V 3A

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

20 Pieces US$0.029-0.039 / Piece

Sepcifications

  • Certification RoHS, ISO
  • Function Switch Transistor
  • Structure Trench
  • Encapsulation Structure Plastic Sealed Transistor
  • Power Level Medium Power
  • Material Plastic
  • Transport Package Carton
  • Specification SOT-23-3L package
  • Trademark GOFORD
  • Origin China
  • Spq 3000 PCS/ Reel
  • Lead Time 4~6 Weeks

Product Description

Factory Directly N-Channel Trench Mosfet of Sot-23-3L 100V 3A General Description The G1006LE uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. General Features High power and current ...

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100V Mosfet Comparison
Transaction Info
Price US $ 0.029-0.039/ Piece US $ 0.0099-0.0168/ Piece US $ 0.0099-0.0168/ Piece US $ 0.0099-0.0168/ Piece US $ 0.0099-0.0168/ Piece
Min Order 20 Pieces 5000 Pieces 5000 Pieces 5000 Pieces 5000 Pieces
Trade Terms - - - - -
Payment Terms T/T, Paypal T/T, D/P, Western Union, Paypal, Money Gram T/T, D/P, Western Union, Paypal, Money Gram T/T, D/P, Western Union, Paypal, Money Gram T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification RoHS, ISO RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC
Management System Certification ISO 9001 - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe Domestic Domestic Domestic Domestic
Annual Export Revenue - - - - -
Business Model Own Brand - - - -
Average Lead Time Off-season: 1 Month(s) - - - -
Product Attributes
Specification
Function: Switch Transistor;
Structure: Trench;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Material: Plastic;
Spq: 3000 PCS/ Reel;
Lead Time: 4~6 Weeks;
Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Pppm: 400W;
Ifsm(Uni): 60A;
Case: SMA;
Stand-off Voltage: 54V;
Maximum Peak Pulse Current: 4.6A;
Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Pppm: 400W;
Ifsm(Uni): 60A;
Case: SMA;
Stand-off Voltage: 45V;
Maximum Peak Pulse Current: 5.5A;
Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Pppm: 400W;
Ifsm(Uni): 60A;
Case: SMA;
Stand-off Voltage: 48V;
Maximum Peak Pulse Current: 5.2A;
Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Pppm: 400W;
Ifsm(Uni): 60A;
Case: SMA;
Stand-off Voltage: 58V;
Maximum Peak Pulse Current: 4.3A;
Supplier Name

Wuxi Goford Semiconductor Co., Ltd.

China Supplier - Gold Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier