Fast Delivery Stock Mosfet Field Effect Transistor 30V 50A pictures & photos

Fast Delivery Stock Mosfet Field Effect Transistor 30V 50A

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Price

Min. Order Reference FOB Price

20 Pieces US$0.07-0.08 / Piece

Sepcifications

Certification RoHS, ISO, SGS
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Medium Power
Material Plastic
Transport Package Carton
Specification TO-252 package
Trademark GOFORD
Origin China
Spq 2500/Reel
Lead Time 4~6 Weeks

Product Description

Fast Delivery Stock Mosfet Field Effect Transistor 30V 50A General Description The G50N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features VDS 30V ID (at VGS = -10V) 50A RDS(ON) (at ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Stock Mosfet Comparison

	Fast Delivery Stock Mosfet Field Effect Transistor 30V 50A Contact Now	Quick View Original Transistor Bsc093n04lsg 40V 13A 9.3mΩ @10V, 40A 2.5W N Channel Tdson-8 (6X5) Mosfets RoHS Bom Service Contact Now	Quick View Original Transistor Bsc014n04LSI Tdson-8 (5.1X5.9) Mosfets RoHS Bom Service Contact Now	Quick View Original Transistor Irfts9342trpbf 30V 5.8A 32mΩ @10V, 5.8A 2W P Channel Tsop-6-1.5mm Mosfets RoHS Bom Service Contact Now	Quick View Original Transistor Irlts2242trpbf 20V 6.9A 26mΩ @4.5V, 6.9A 2W P Channel Tsop-6-1.5mm Mosfets RoHS Bom Service Contact Now

Transaction Info
	Fast Delivery Stock Mosfet Field Effect Transistor 30V 50A Contact Now	Quick View Original Transistor Bsc093n04lsg 40V 13A 9.3mΩ @10V, 40A 2.5W N Channel Tdson-8 (6X5) Mosfets RoHS Bom Service Contact Now	Quick View Original Transistor Bsc014n04LSI Tdson-8 (5.1X5.9) Mosfets RoHS Bom Service Contact Now	Quick View Original Transistor Irfts9342trpbf 30V 5.8A 32mΩ @10V, 5.8A 2W P Channel Tsop-6-1.5mm Mosfets RoHS Bom Service Contact Now	Quick View Original Transistor Irlts2242trpbf 20V 6.9A 26mΩ @4.5V, 6.9A 2W P Channel Tsop-6-1.5mm Mosfets RoHS Bom Service Contact Now
Price	US $ 0.07-0.08/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece
Min Order	20 Pieces	10 Pieces	10 Pieces	10 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Product Certification	RoHS, ISO, SGS	RoHS, CE, ISO	RoHS, CE, ISO	RoHS, CE, ISO	RoHS, CE, ISO
Management System Certification	ISO 9001	ISO 9001	ISO 9001	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	-	-	-	-
Average Lead Time	Off-season: 1 Month(s)	-	-	-	-
Product Attributes
Specification	Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Plastic; Spq: 2500/Reel; Lead Time: 4~6 Weeks;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.
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