G3035 Mosfet P-CH 30V 4.1A Dissipation Rate 1.4W Sot23 (TRANSISTOR) pictures & photos

G3035 Mosfet P-CH 30V 4.1A Dissipation Rate 1.4W Sot23 (TRANSISTOR)

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Price

Min. Order Reference FOB Price

20 Pieces US$0.08-0.09 / Piece

Sepcifications

Certification RoHS, ISO
Shape SMD
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Small Power
Material Silicon
Transport Package Carton
Trademark GOFORD
Origin China
Vdss -30V
ID -4.1A
RDS 59ohm(Vgs=-4.5V)
Pd 1.4W
Package Sot-23,Sot-23-3L
Stock in Stock
Sample Available
Lead Free Status Pb-Free
Packaging 3000PCS/Reel

Product Description

Product Description G3035 MOSFET P-CH 30V 4.1A Dissipation Rate 1.4W SOT23 (TRANSISTOR) Part Number G3035 VDSS -30V ID -4.1A RDS 59mΩ @ vgs=-4.5V Vth -1.45V Package SOT-23 Ciss 650 pF Crss 65 pF Datasheet You may like For more products details, please contact us ! ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Mosfet Transistor Comparison

	G3035 Mosfet P-CH 30V 4.1A Dissipation Rate 1.4W Sot23 (TRANSISTOR) Contact Now	Quick View Original Integrated Circuits Szmm3z9V1st1g ± 2% Single 8.85V~9.23V 300MW 9.1V SOD-323 Zener Diodes RoHS Bom Service Contact Now	Quick View Original Integrated Circuits S3K 3A Single 1.2V@3A 800V Do-214ab Diodes - General Purpose RoHS Bom Service Contact Now	Quick View Original Integrated Circuits Bas1602vh6327xtsa1 80V Single 1.25V@150mA 4ns 200mA Sc-79-2 Switching Diode RoHS Bom Service Contact Now	Quick View Original Integrated Circuits Sb01-05c-Tb-E 50V 100mA 550mv@100mA Sc-59-3 Schottky Barrier Diodes (SBD) RoHS Bom Service Contact Now

Transaction Info
	G3035 Mosfet P-CH 30V 4.1A Dissipation Rate 1.4W Sot23 (TRANSISTOR) Contact Now	Quick View Original Integrated Circuits Szmm3z9V1st1g ± 2% Single 8.85V~9.23V 300MW 9.1V SOD-323 Zener Diodes RoHS Bom Service Contact Now	Quick View Original Integrated Circuits S3K 3A Single 1.2V@3A 800V Do-214ab Diodes - General Purpose RoHS Bom Service Contact Now	Quick View Original Integrated Circuits Bas1602vh6327xtsa1 80V Single 1.25V@150mA 4ns 200mA Sc-79-2 Switching Diode RoHS Bom Service Contact Now	Quick View Original Integrated Circuits Sb01-05c-Tb-E 50V 100mA 550mv@100mA Sc-59-3 Schottky Barrier Diodes (SBD) RoHS Bom Service Contact Now
Price	US $ 0.08-0.09/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece
Min Order	20 Pieces	10 Pieces	10 Pieces	10 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Product Certification	RoHS, ISO	RoHS, CE, ISO	RoHS, CE, ISO	RoHS, CE, ISO	RoHS, CE, ISO
Management System Certification	ISO 9001	ISO 9001	ISO 9001	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	-	-	-	-
Average Lead Time	Off-season: 1 Month(s)	-	-	-	-
Product Attributes
Specification	Shape: SMD; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: -30V; ID: -4.1A; RDS: 59ohm(Vgs=-4.5V); Pd: 1.4W; Package: Sot-23,Sot-23-3L; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Packaging: 3000PCS/Reel;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.
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