1002 100V 2A Semiconductor Materials Silicon Power Mosfet for LED Lighting pictures & photos

1002 100V 2A Semiconductor Materials Silicon Power Mosfet for LED Lighting

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Price

Min. Order Reference FOB Price

100 Pieces Negotiable

Sepcifications

Certification RoHS, ISO
Shape SMD
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Small Power
Material Silicon
Transport Package Carton
Trademark GOFORD
Origin China
Vdss 100V
ID 2A
RDS 185mr
Pd 1.1W
Package Sot-23
Stock in Stock
Sample Available
Lead Free Status Pb-Free
Spq 3000PCS/Reel

Product Description

Product Description 1002 100V 2A semiconductor materials silicon power mosfet for LED lighting Part Number 1002 VDSS 100V ID 2A RDS 180mΩ @ vgs=10V Vth 2V Package SOT-23 Ciss 190 pF Crss 13 pF Datasheet You may like For more products details, please contact us ! ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Electronic Component Comparison

	1002 100V 2A Semiconductor Materials Silicon Power Mosfet for LED Lighting Contact Now	Quick View Low Collector - Emitter Saturation Voltage Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now	Quick View Highly Reliable General Inverter of Automotive and Industrial IGBT Contact Now	Quick View Igbts Insulated Gate Bipolar Transistors Contact Now	Quick View Trident-Gate Bipolar Transistor Automotive Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now

Transaction Info
	1002 100V 2A Semiconductor Materials Silicon Power Mosfet for LED Lighting Contact Now	Quick View Low Collector - Emitter Saturation Voltage Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now	Quick View Highly Reliable General Inverter of Automotive and Industrial IGBT Contact Now	Quick View Igbts Insulated Gate Bipolar Transistors Contact Now	Quick View Trident-Gate Bipolar Transistor Automotive Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now
Price	Negotiable	US $ 0.10-0.60/ Piece	US $ 0.10-0.60/ Piece	US $ 0.10-0.60/ Piece	US $ 0.10-0.60/ Piece
Min Order	100 Pieces	1000 Pieces	1000 Pieces	1000 Pieces	1000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T
Quality Control
Product Certification	RoHS, ISO	RoHS, ISO	RoHS, ISO	RoHS, ISO	RoHS, ISO
Management System Certification	ISO 9001	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Shape: SMD; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: 100V; ID: 2A; RDS: 185mr; Pd: 1.1W; Package: Sot-23; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 3000PCS/Reel;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Microwave Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Microwave Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Microwave Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Microwave Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.
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