Sira52dp Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter pictures & photos

Sira52dp Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter

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Price

Min. Order Reference FOB Price

20 Pieces US$0.129-0.3219 / Piece

Sepcifications

Certification RoHS, ISO, SGS
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Small Power
Transport Package Carton
Specification DFN package
Trademark GOFORD
Origin China
Spq 2500PCS/Reel
Lead Time 4~6 Weeks

Product Description

SIRA52DP Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter General Description The GT55N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features General Features VDS 60V ID (at ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Sira52dp Comparison

	Sira52dp Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter Contact Now	Irfp250npbf N-Channel Mosfet Transistor 200 V 30A (Tc) 214W (Tc) DIP to-247AC Irfp250 Stw40NF20 Irfp250pbf Irfp250npbf Irfp250mpbf Contact Now	New and Original Power Distribution Switches TPS2551qdbvrct Contact Now	Original Electronic Components Attiny13A-Sh Attiny13V-10ssu Attiny1607-Mnr Integrated Circuit Bom List Service Contact Now	New and Original Hydra 35 Mohm Otp a IC TPS2hb35aqpwprq1 Hydra 35 Contact Now

Transaction Info
	Sira52dp Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter Contact Now	Irfp250npbf N-Channel Mosfet Transistor 200 V 30A (Tc) 214W (Tc) DIP to-247AC Irfp250 Stw40NF20 Irfp250pbf Irfp250npbf Irfp250mpbf Contact Now	New and Original Power Distribution Switches TPS2551qdbvrct Contact Now	Original Electronic Components Attiny13A-Sh Attiny13V-10ssu Attiny1607-Mnr Integrated Circuit Bom List Service Contact Now	New and Original Hydra 35 Mohm Otp a IC TPS2hb35aqpwprq1 Hydra 35 Contact Now
Price	US $ 0.129-0.3219/ Piece	US $ 0.01-1.00/ Piece	US $ 0.10-0.50/ Piece	US $ 0.10-0.50/ Piece	US $ 0.10-0.50/ Piece
Min Order	20 Pieces	1 Pieces	1 Pieces	1 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal
Quality Control
Product Certification	RoHS, ISO, SGS	-	-	-	-
Management System Certification	ISO 9001	GMP	GMP	GMP	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	OEM	OEM	OEM	OEM
Average Lead Time	Off-season: 1 Month(s)	-	-	-	-
Product Attributes
Specification	Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Spq: 2500PCS/Reel; Lead Time: 4~6 Weeks;	Shape: DIP; Function: Mosfet; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 200 V; Continuous Drain (ID) @ 25°c: 30A (Tc); Drive Voltage (Max RDS on, Min RDS on): 10V; RDS on (Max) @ ID, Vgs: 75mohm @ 18A, 10V; Vgs(Th) (Max) @ ID: 4V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 123 Nc @ 10 V; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 2159 PF @ 25 V; Power Dissipation (Max): 214W (Tc); Operating Temperature: -55°c ~ 175°c (Tj); Mounting Type: Through Hole; Supplier Device Package: to-247AC; Base Product Number: to-247-3;	Shape: DIP/SMD; Shielding Type: N/a; Cooling Method: N/a; Function: N/a; Working Frequency: N/a; Structure: N/a; Encapsulation Structure: DIP/SMD; Power Level: N/a; Material: N/a; 12: 12;	Shape: DIP/SMD; Shielding Type: N/a; Cooling Method: N/a; Function: N/a; Working Frequency: N/a; Structure: N/a; Encapsulation Structure: DIP/SMD; Power Level: N/a; Material: N/a;	Shape: DIP/SMD; Shielding Type: N/a; Cooling Method: N/a; Function: N/a; Working Frequency: N/a; Structure: N/a; Encapsulation Structure: DIP/SMD; Power Level: N/a; Material: N/a; 12: 12;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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