G1002 2A to-92 100V N Channel Mosfet Transistor for LED Lighting pictures & photos

G1002 2A to-92 100V N Channel Mosfet Transistor for LED Lighting

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Price

Min. Order Reference FOB Price

20 Pieces US$0.042-0.059 / Piece

Sepcifications

Certification RoHS, ISO, SGS
Function Switch Transistor
Structure Planar
Encapsulation Structure Plastic Sealed Transistor
Power Level Medium Power
Material Plastic
Transport Package Carton
Specification TO-92 package
Trademark GOFORD
Origin China
Spq 1000PCS/Bag
Lead Time 4~6 Weeks

Product Description

G1002 2A TO-92 100V N channel Mosfet Transistor for LED Lighting General Description The G1002 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. General Features High power and ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

100V N Channel Mosfet Comparison

	G1002 2A to-92 100V N Channel Mosfet Transistor for LED Lighting Contact Now	Quick View 30V/6A 26mΩ Ru3400b N-Channel Advanced Power Mosfet Contact Now	Quick View 100V/100A 3.9mΩ DG100N02Q N-Channel Advanced Power Mosfet Contact Now	Quick View HCFL65R210 DFN8*8 650V N-Channel Super Junction MOSFET COOLMOS Contact Now	Quick View 80V/85A 5.7mΩ DG80N02Q N-Channel Advanced Power Mosfet Contact Now

Transaction Info
	G1002 2A to-92 100V N Channel Mosfet Transistor for LED Lighting Contact Now	Quick View 30V/6A 26mΩ Ru3400b N-Channel Advanced Power Mosfet Contact Now	Quick View 100V/100A 3.9mΩ DG100N02Q N-Channel Advanced Power Mosfet Contact Now	Quick View HCFL65R210 DFN8*8 650V N-Channel Super Junction MOSFET COOLMOS Contact Now	Quick View 80V/85A 5.7mΩ DG80N02Q N-Channel Advanced Power Mosfet Contact Now
Price	US $ 0.042-0.059/ Piece	US $ 0.02-0.023/ Piece	US $ 0.30-0.33/ Piece	US $ 0.88-0.90/ Piece	US $ 0.20-0.22/ Piece
Min Order	20 Pieces	3000 Pieces	3000 Pieces	1000 Pieces	3000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS, ISO, SGS	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	ISO 9001	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	OEM, ODM	OEM, ODM	OEM, ODM	OEM, ODM
Average Lead Time	Off-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Function: Switch Transistor; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Plastic; Spq: 1000PCS/Bag; Lead Time: 4~6 Weeks;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application3: Power Factor Correction (Pfc); Application4: Uninterruptible Power Supply (UPS); Application5: AC to DC Converters; Application6: Telecom, Solar;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application3: Power Factor Correction (Pfc); Application4: Uninterruptible Power Supply (UPS); Application5: AC to DC Converters; Application6: Telecom, Solar;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application3: Power Factor Correction (Pfc); Application4: Uninterruptible Power Supply (UPS); Application5: AC to DC Converters; Application6: Telecom, Solar;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application3: Power Factor Correction (Pfc); Application4: Uninterruptible Power Supply (UPS); Application5: AC to DC Converters; Application6: Telecom, Solar;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.
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