China Mosfet Manufacturer 40V 13A P Mosfet for Mobile Fast Charger pictures & photos

China Mosfet Manufacturer 40V 13A P Mosfet for Mobile Fast Charger

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Price

Min. Order Reference FOB Price

20 Pieces US$0.07-0.10 / Piece

Sepcifications

Certification RoHS, ISO, SGS
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Small Power
Material Plastic
Transport Package Carton
Specification sop-8 package
Trademark GOFORD
Origin China
Spq 4000 PCS/Reel
Lead Time 4~6 Weeks

Product Description

China MOSFET Manufacturer 40V 13A P MOSFET for Mobile Fast Charger General Description The G13P04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. General Features High power and ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

40V Mosfet Comparison

	China Mosfet Manufacturer 40V 13A P Mosfet for Mobile Fast Charger Contact Now	Electronic Components 900V 60A IGBT Transistor Rjh60f7 Contact Now	High Quality Transisotor Mosfet N-CH 200V 20A Irfp240 Contact Now	Ss8050 Ss8550 Y1 1.5A/25V SMD Transistor Contact Now	Quick View IGBT Transistor Fgh40n60sfd Fgh40n60 40A 600V to-247 Contact Now

Transaction Info
	China Mosfet Manufacturer 40V 13A P Mosfet for Mobile Fast Charger Contact Now	Electronic Components 900V 60A IGBT Transistor Rjh60f7 Contact Now	High Quality Transisotor Mosfet N-CH 200V 20A Irfp240 Contact Now	Ss8050 Ss8550 Y1 1.5A/25V SMD Transistor Contact Now	Quick View IGBT Transistor Fgh40n60sfd Fgh40n60 40A 600V to-247 Contact Now
Price	US $ 0.07-0.10/ Piece	US $ 1.00-2.00/ Piece	US $ 0.50-3.00/ Piece	US $ 0.05/ Piece	US $ 0.01-0.10/ Piece
Min Order	20 Pieces	10 Pieces	5 Pieces	3000 Pieces	100 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	RoHS, ISO, SGS	-	RoHS, CE, ISO	-	-
Management System Certification	ISO 9001	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	-	-	-	-
Average Lead Time	Off-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Plastic; Spq: 4000 PCS/Reel; Lead Time: 4~6 Weeks;	Shape: DIP; Shielding Type: /; Cooling Method: /; Working Frequency: High Frequency; Structure: /; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Plastic with Copper; Description: IGBT 600V 90A 328.9W To247; Detailed Description: /; Operating Temperature: Standard; Category: IGBT; Base Product Number: Rjh60f7; Fet Type: IGBT;	Shape: DIP; Working Frequency: Overclocking; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Germanium; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post; Product Number: Irfp240; Description: Mosfet N-CH 200V 20A; Detailed Description: N-Channel 200 V 20A (Tc) 150W (Tc) Through Hole; Uses: Transistor;	Shape: ST; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: Overclocking; Encapsulation Structure: Surface Package; Material: Silicon; Installation Style: Through Hole; Transistor Polarity: NPN; Lead Free Status: RoHS Compliant; Package / Box: to-92; Transistor Type: Bipolar Transistor (Bjt); Characteristic Frequency: 100MHz; Collector Current-Max (IC): 1.5 a; Package Shape: Rectangular; Collector-Emitter Voltage-Max: 25V; Surface Mount: Yes;	Function: IGBT Transistor; Structure: Diffusion; Power Level: High Power; Name: Fgh40n60sfdtu; Product Category: IGBT Transistor; Polarity/Channel Type: N-Channel; Transistor Application: Power Control; Subcategory: Insulated Gate Bip Transistors; Series: Fgh40n60sfd; Product Type: IGBT; Detailed Description: IGBT Field Stop 600V 80A 290W Through Hole; IGBT Type: Field Stop; Base Product Number: Fgh40n60;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.
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