Low Price Good Quality Sgt Mosfet Gt52n10t 100V Transistor for Solar Energy pictures & photos

Low Price Good Quality Sgt Mosfet Gt52n10t 100V Transistor for Solar Energy

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About this Item

Price

Min. Order Reference FOB Price

20 Pieces US$0.223-0.377 / Piece

Sepcifications

Certification RoHS, ISO
Shape Through Hole
Function Switch Transistor
Structure Sgt
Encapsulation Structure Plastic Sealed Transistor
Power Level High Power
Material Silicon
Transport Package Carton
Trademark GOFORD
Origin China
Vdss 100V
ID 80A
RDS 7.5 Mr
Pd 227W
Package to-220
Stock in Stock
Sample Available
Lead Free Status Pb-Free
Spq 50PCS/Tube

Product Description

Product Description Low Price Good Quality SGT MOSFET GT52N10T 100V Transistor for Solar Energy Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, smaller chip size and better Rdson. Part Number GT52N10T VDSS 100V ID 80A RDS ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Solar Energy Comparison

	Low Price Good Quality Sgt Mosfet Gt52n10t 100V Transistor for Solar Energy Contact Now	Quick View Original Integrated Circuits Mmbd355lt1g 7V 1 Pair Common Anode Sot-23-3 Schottky Barrier Diodes (SBD) RoHS Bom Service Contact Now	Quick View Original Integrated Circuits Bat1704e6327htsa1 Sot-23 Schottky Barrier Diodes (SBD) RoHS Bom Service Contact Now	Quick View Original Integrated Circuits Bzx84c22lt1g ± 6% Single 20.8V~23.3V 225MW 22V Sot-23 Zener Diodes RoHS Bom Service Contact Now	Quick View Original Integrated Circuits Bav99rwt1g 100V 300MW Dual 1.25V@150mA 6ns 215mA Sot-323 Switching Diode RoHS Bom Service Contact Now

Transaction Info
	Low Price Good Quality Sgt Mosfet Gt52n10t 100V Transistor for Solar Energy Contact Now	Quick View Original Integrated Circuits Mmbd355lt1g 7V 1 Pair Common Anode Sot-23-3 Schottky Barrier Diodes (SBD) RoHS Bom Service Contact Now	Quick View Original Integrated Circuits Bat1704e6327htsa1 Sot-23 Schottky Barrier Diodes (SBD) RoHS Bom Service Contact Now	Quick View Original Integrated Circuits Bzx84c22lt1g ± 6% Single 20.8V~23.3V 225MW 22V Sot-23 Zener Diodes RoHS Bom Service Contact Now	Quick View Original Integrated Circuits Bav99rwt1g 100V 300MW Dual 1.25V@150mA 6ns 215mA Sot-323 Switching Diode RoHS Bom Service Contact Now
Price	US $ 0.223-0.377/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece
Min Order	20 Pieces	10 Pieces	10 Pieces	10 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Product Certification	RoHS, ISO	RoHS, CE, ISO	RoHS, CE, ISO	RoHS, CE, ISO	RoHS, CE, ISO
Management System Certification	ISO 9001	ISO 9001	ISO 9001	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	-	-	-	-
Average Lead Time	Off-season: 1 Month(s)	-	-	-	-
Product Attributes
Specification	Shape: Through Hole; Function: Switch Transistor; Structure: Sgt; Encapsulation Structure: Plastic Sealed Transistor; Power Level: High Power; Material: Silicon; Vdss: 100V; ID: 80A; RDS: 7.5 Mr; Pd: 227W; Package: to-220; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 50PCS/Tube;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.
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