Gt060n04D3 40V 40A Dfn3X3-8L Power Transistor N Mosfet pictures & photos

Gt060n04D3 40V 40A Dfn3X3-8L Power Transistor N Mosfet

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About this Item

Price

Min. Order Reference FOB Price

100 Pieces Negotiable

Sepcifications

Transport Package Carton
Trademark Goford
Origin China
Leading Time 4~6 Weeks
Manufacturing Technology Discrete Device
Material Element Semiconductor
Type N-type Semiconductor
Brand Goford

Product Description

New Original Transistor GT060N04D3 40V 40A N-Channnel DFN3X3-8L Mosfet General Description The GT060N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Part Number GT060N04D3 VDSS ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

ISO9001 Comparison

	Gt060n04D3 40V 40A Dfn3X3-8L Power Transistor N Mosfet Contact Now	Quick View Customized Kp Soft Start Module Kp High Voltage Thyristors Outline T12 Contact Now	Quick View 1200V / 450A 2mbi450vn-170-50 FUJI Electronic Component Rectifier Diode Contact Now	Quick View 2mbi450vn-170-50 FUJI Electric IGBT Module (V series) 1200V / 450A Contact Now	Quick View High Speed Switching 2mbi450vn-170-50 FUJI IGBT Module Contact Now

Transaction Info
	Gt060n04D3 40V 40A Dfn3X3-8L Power Transistor N Mosfet Contact Now	Quick View Customized Kp Soft Start Module Kp High Voltage Thyristors Outline T12 Contact Now	Quick View 1200V / 450A 2mbi450vn-170-50 FUJI Electronic Component Rectifier Diode Contact Now	Quick View 2mbi450vn-170-50 FUJI Electric IGBT Module (V series) 1200V / 450A Contact Now	Quick View High Speed Switching 2mbi450vn-170-50 FUJI IGBT Module Contact Now
Price	Negotiable	US $ 1/ Piece	US $ 115.00-125.00/ Piece	US $ 115.00-125.00/ Piece	US $ 115.00-125.00/ Piece
Min Order	100 Pieces	5 Pieces	10 Pieces	10 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram, Xtransfer	L/C, T/T, D/P, Western Union, Paypal, Money Gram, Xtransfer	L/C, T/T, D/P, Western Union, Paypal, Money Gram, Xtransfer
Quality Control
Management System Certification	ISO 9001	ISO 9001	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	North America, South America, Eastern Europe, Southeast Asia, Africa, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	OEM, ODM, Own Brand	OEM, ODM	OEM, ODM	OEM, ODM
Average Lead Time	Off-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Leading Time: 4~6 Weeks; Manufacturing Technology: Discrete Device; Material: Element Semiconductor; Type: N-type Semiconductor; Brand: Goford;	Application: Design for High Power Industrial; Batch Number: 2023+; Manufacturing Technology: Discrete Device; Material: Compound Semiconductor; Model: Outline T12; Package: Housing; Signal Processing: Analog Digital Composite and Function; Type: N-Type Semiconductor; Install: Parallel, Series; Chip Type: Silicon Controlled Chip; Feature: High Current Density; Outline Size: T12; Shape: Round; Color: White; Cooling: Double-Side Cooling; Price Term: Fob/CPT/CIF; Brand: Sailton/Sti;	Voltage: 1200V; Configuration: Single; IC(Nom) / If(Nom): 450 a; Technology: IGBT3; Manufacturing Technology: Optoelectronic Semiconductor; Material: Element Semiconductor; Type: N-type Semiconductor; Package: PGA(Pin Grid Array Package); Signal Processing: Analog Digital Composite and Function; Application: Inverter for Motoe Drive; Model: 2mbi450vn-170-50; Batch Number: 2022+; Brand: FUJI Electric;	Voltage: 1200V; Configuration: Single; IC(Nom) / If(Nom): 450 a; Technology: IGBT3; Manufacturing Technology: Optoelectronic Semiconductor; Material: Element Semiconductor; Type: N-type Semiconductor; Package: PGA(Pin Grid Array Package); Signal Processing: Analog Digital Composite and Function; Application: Inverter for Motoe Drive; Model: 2mbi450vn-170-50; Batch Number: 2022+; Brand: FUJI Electric;	Voltage: 1200V; Configuration: Single; IC(Nom) / If(Nom): 450 a; Technology: IGBT3; Manufacturing Technology: Optoelectronic Semiconductor; Material: Element Semiconductor; Type: N-type Semiconductor; Package: PGA(Pin Grid Array Package); Signal Processing: Analog Digital Composite and Function; Application: Inverter for Motoe Drive; Model: 2mbi450vn-170-50; Batch Number: 2022+; Brand: FUJI Electric;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Sailing Commercial (Tianjin) Co., Ltd.	Shenzhen Botong Electric Co., Ltd.	Shenzhen Botong Electric Co., Ltd.	Shenzhen Botong Electric Co., Ltd.
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