ISO9001 Certificate 20V 14A Dfn Package Mosfet Transistor pictures & photos

ISO9001 Certificate 20V 14A Dfn Package Mosfet Transistor

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Price

Min. Order Reference FOB Price

20 Pieces US$0.015-0.229 / Piece

Sepcifications

Certification RoHS, ISO, SGS
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Medium Power
Transport Package Carton
Specification DFN package
Trademark GOFORD
Origin China
Spq 3000PCS/Reel

Product Description

ISO9001 Certificate 20V 14A DFN Package Mosfet Transistor General Description The G2014 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features General Features VDS 20V ID (at VGS =10V) 14A ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Mosfet Comparison

	ISO9001 Certificate 20V 14A Dfn Package Mosfet Transistor Contact Now	Quick View Original Irf3205 Mosfet Original Transistor Irf 3205 Power Mosfet Transistor N-Channel Irf3205pbf Contact Now	Quick View 2sc2078 C2078 in-Line to-220 NPN High-Frequency Power Transistor Contact Now	Uln2804A Uln2804APG Transistor Array 8 NPN Darlington Contact Now	Quick View Audio Frequency Power Amplifier Transistor 3A, 60V D2012 2SD2012 Contact Now

Transaction Info
	ISO9001 Certificate 20V 14A Dfn Package Mosfet Transistor Contact Now	Quick View Original Irf3205 Mosfet Original Transistor Irf 3205 Power Mosfet Transistor N-Channel Irf3205pbf Contact Now	Quick View 2sc2078 C2078 in-Line to-220 NPN High-Frequency Power Transistor Contact Now	Uln2804A Uln2804APG Transistor Array 8 NPN Darlington Contact Now	Quick View Audio Frequency Power Amplifier Transistor 3A, 60V D2012 2SD2012 Contact Now
Price	US $ 0.015-0.229/ Piece	US $ 0.27-0.30/ Piece	US $ 0.10-0.25/ Piece	US $ 0.10-0.13/ Piece	US $ 0.115-0.13/ Piece
Min Order	20 Pieces	100 Pieces	100 Pieces	1000 Pieces	1000 Pieces
Trade Terms	-	FOB, CIF, EXW	FOB	FOB	FOB, CIF, EXW
Payment Terms	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	RoHS, ISO, SGS	-	-	RoHS	RoHS
Management System Certification	ISO 9001	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	-	-	-	-
Average Lead Time	Off-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Spq: 3000PCS/Reel;	Function: Transistor; Transistor Polarity: N-Channel; Operating Temperature: Standard; Vgs-Gate-Source Breakdown Voltage: 20 V; Samacsys Description: Mosfet N-Channel 55V 110A; Installation Style: Through Hole; Product Number: Irf3205; Description: Mosfet N-CH 55V 110A; Category: Transistors; Drain to Source Voltage (Vdss): 55V;	Function: Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Diffusion; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Iron and Plastic; Transistor Application: Amplifier; Polarity/Channel Type: NPN; DC Current Gain-Min (Hfe): 100; Collector Current-Max (IC): 3 a;	Shape: ST; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor; Encapsulation Structure: Chip Transistor; Power Level: High Power; Transistor Type Product Parament: 8 NPN Darlington; Detailed Description: Transistor Array 8 NPN Darlington 50V 500mA 2.25W; Product Number: Uln2804A; Collector- Emitter Voltage Vceo Max: 50 V; Transistor Polarity: NPN; Product Category: Darlington Transistor; Description: Darlington Transistors Eight NPN Array;	Shape: ST; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: Medium Power Tube; Structure: NPN; Encapsulation Structure: Chip Transistor; Material: Silicon; Transistor Type: NPN; Product Type: Switching Diode; Package: Plug-in Transistor; Installation Type: Through Hole; Family: Transistor (Bjt) - Single; Collector-Emitter Voltage-Max: 60 V; Transistor Application: Amplifier; Product Number: 2SD2012; Category: Transistor; Package Style: Flange Mount; Current - Collector (IC) (Max): 3A;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.
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