Bcx53-16 Al Screen Print Patch Transistor Sot89 PNP Medium Power Transistor pictures & photos

Bcx53-16 Al Screen Print Patch Transistor Sot89 PNP Medium Power Transistor

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Price

Purchase Qty. Reference FOB Price

1,000-9,999 Pieces US$1.00

10,000+ Pieces US$0.90

Sepcifications

Certification RoHS, CE, ISO
Encapsulation Structure Chip Transistor
Working Frequency Overclocking
Function Photosensitive, Darlington Tube, Power Triode
Structure PNP
Material Germanium
Transport Package Standard Packaging
Installation Style SMD/SMT
Application Area Equipment, Household
Package Outline SMD(So)/Surface Package
Types of Schottky Tube
IGBT Type Transistor
Polarity PNP (Single)
Transistor Polarity PNP
Package / Case Sot89

Product Description

BCX53-16 AL Screen Print Patch Transistor SOT89 PNP Medium Power Transistor Main feature Applications Products are widely used in drones, digital products, communication systems, LED drives, power supplies, chargers, smart homes, Set-top boxes, audio, ...

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Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Since 2016

Audited Supplier

Rating & Reviews： 5.0/5.0

(1 Reviews)

Business Type Trading Company
Main Products Transistor, IC, Rectifier
Number of Employees 18
Year of Establishment 2008-09-17
Plant Area 250 square meters
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays

Chip Comparison

	Bcx53-16 Al Screen Print Patch Transistor Sot89 PNP Medium Power Transistor Contact Now	Bzt52c3V3s Substitute Goods Bzy55b3V3 Rbg Zener Diodes 500MW, 2%, Small Signal Zener Diode Contact Now	Original NTD24n06lt4g N-Channel 60 V 24A (Ta) 1.36W (Ta) , 62.5W (Tj) Mosfet Transistor NTD24n06 Contact Now	Ao4435 Mode Mosfet Sop8 Contact Now	Wholesale Original Infineon IGBT Module Power FF50r12rt4 FF75r12rt4 FF100r12rt4 FF150r12rt4 Contact Now

Transaction Info
	Bcx53-16 Al Screen Print Patch Transistor Sot89 PNP Medium Power Transistor Contact Now	Bzt52c3V3s Substitute Goods Bzy55b3V3 Rbg Zener Diodes 500MW, 2%, Small Signal Zener Diode Contact Now	Original NTD24n06lt4g N-Channel 60 V 24A (Ta) 1.36W (Ta) , 62.5W (Tj) Mosfet Transistor NTD24n06 Contact Now	Ao4435 Mode Mosfet Sop8 Contact Now	Wholesale Original Infineon IGBT Module Power FF50r12rt4 FF75r12rt4 FF100r12rt4 FF150r12rt4 Contact Now
Price	US $ 0.90-1.00/ Piece	US $ 0.90-21.00/ Piece	US $ 0.12/ Piece	US $ 0.03/ Piece	US $ 90.00-100.00/ Piece
Min Order	1000 Pieces	100 Pieces	2500 Pieces	1000 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal	T/T, D/P, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal	T/T	T/T
Quality Control
Product Certification	RoHS, CE, ISO	RoHS	-	RoHS, CE, ISO	CE
Management System Certification	-	ISO 9001	GMP	ISO 9001	ISO 9001, ISO 9000, ISO 14000, IATF16949, GMP, HACCP, GAP, BREEAM, QSR, LEED
Trade Capacity
Export Markets	South America, Europe, Southeast Asia/ Mideast, Others	North America, South America, Eastern Europe, Southeast Asia, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Europe, Southeast Asia/ Mideast	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	-	OEM, ODM	OEM	OEM, Own Brand	OEM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: 1 Month(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Encapsulation Structure: Chip Transistor; Working Frequency: Overclocking; Function: Photosensitive, Darlington Tube, Power Triode; Structure: PNP; Material: Germanium; Installation Style: SMD/SMT; Application Area: Equipment, Household; Package Outline: SMD(So)/Surface Package; Types of: Schottky Tube; IGBT Type: Transistor; Polarity: PNP (Single); Transistor Polarity: PNP; Package / Case: Sot89;	Encapsulation Structure: Gold Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Overclocking; Power Level: 200-500MW; Function: Darlington Tube, Power Triode, Switching Triode; Structure: Planar; Material: Silicon; Packaging: 10000PCS; Use: Electronic Products; Retail: Supply; Other Components: Supply; Electronics Wires: Supply; Diode: Supply; Transistor: Supply; Develoment and Design: Supply; Resistors: Supply; Capacitors: Supply; Connectors: Supply; Sensor: Supply; SMT PCBA: Supply; PCB Board: Supply;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Material: Silicon; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 60 V; Current - Continuous Drain (ID) @ 25c: 24A (Ta); Drive Voltage (Max RDS on, Min RDS on): 5V; RDS on (Max) @ ID, Vgs: 45mohm @ 10A, 5V; Vgs(Th) (Max) @ ID: 2V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 32 Nc @ 5 V; Vgs (Max): ±15V; Input Capacitance (CISS) (Max) @ Vds: 1140 PF @ 25 V; Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj);	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Power Level: High Power; Function: Switching Triode; Structure: Diffusion; Material: Germanium; Name: Ao4435; Type: Mosfet; Color: Black; Package: Sop8;	Working Frequency: High Frequency; Power Level: High Power; Structure: Planar;
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