Field Effect Transistor Si2301ds A1shb P-Channel 1.25W 2.5V Mosfet pictures & photos

Field Effect Transistor Si2301ds A1shb P-Channel 1.25W 2.5V Mosfet

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Price

Min. Order Reference FOB Price

100 Pieces US$1.44-2.40 / Piece

Sepcifications

Certification RoHS, CE, ISO, CCC
Encapsulation Structure Chip Transistor
Working Frequency Enhanced
Function Power Triode, Switching Triode, Mosfet
Chip Transistor Code A1shb
Maximum Power Dissipation 450 (MW)
Fet Technology Metal-Oxide Semiconductor
Type Mosfet
Transistor Type Mosfet
Control Channel Type P-Channel
Maximum Power Consumption (Pd) 1.25 W
Shipping by DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
Application Areas Household Appliances, 3c Digit

Product Description

Product Paramenters • High dense cell design for extremely low RDS(ON) • Rugged and reliable • High Speed Switching • SOT-23 Package Company Profile Product packaging FAQ 1.Who are you? We are Manufacturer of High Quality ...

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Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Since 2016

Audited Supplier

Rating & Reviews： 5.0/5.0

(1 Reviews)

Business Type Trading Company
Main Products Transistor, IC, Rectifier
Number of Employees 18
Year of Establishment 2008-09-17
Plant Area 250 square meters
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays

Mosfet Transistor Comparison

	Field Effect Transistor Si2301ds A1shb P-Channel 1.25W 2.5V Mosfet Contact Now	Ceramic High Frequency Oscillator Power Triode Itl2-1 Contact Now	High Frequency Generator Power Tube Itl2-1 Contact Now	Quick View SI2318CDS-T1-GE3 SI2318CDS trans mosfet transistor Contact Now	Quick View Electronic Tube 3cx2500f3, 3cx2500h3, 3cx2500A3 Contact Now

Transaction Info
	Field Effect Transistor Si2301ds A1shb P-Channel 1.25W 2.5V Mosfet Contact Now	Ceramic High Frequency Oscillator Power Triode Itl2-1 Contact Now	High Frequency Generator Power Tube Itl2-1 Contact Now	Quick View SI2318CDS-T1-GE3 SI2318CDS trans mosfet transistor Contact Now	Quick View Electronic Tube 3cx2500f3, 3cx2500h3, 3cx2500A3 Contact Now
Price	US $ 1.44-2.40/ Piece	Negotiable	Negotiable	US $ 0.12-15.00/ Piece	US $ 400.00-500.00/ Piece
Min Order	100 Pieces	1 Pieces	1 Pieces	100 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union
Quality Control
Product Certification	RoHS, CE, ISO, CCC	-	-	RoHS, CE, CCC	-
Management System Certification	-	-	-	ISO 9001, FSC	-
Trade Capacity
Export Markets	South America, Europe, Southeast Asia/ Mideast, Others	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	> US $100 Million	> US $100 Million	-	> US $100 Million
Business Model	-	OEM, ODM	OEM, ODM	OEM	OEM, ODM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Encapsulation Structure: Chip Transistor; Working Frequency: Enhanced; Function: Power Triode, Switching Triode, Mosfet; Chip Transistor Code: A1shb; Maximum Power Dissipation: 450 (MW); Fet Technology: Metal-Oxide Semiconductor; Type: Mosfet; Transistor Type: Mosfet; Control Channel Type: P-Channel; Maximum Power Consumption (Pd): 1.25 W; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post; Application Areas: Household Appliances, 3c Digit;	Encapsulation Structure: Foam Packing; Installation: Vertical; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Structure: Vacuum; Material: Metal Ceramic; Filament Voltage: 6.3V; Filament Current: 35A; Amplifcation Factor: 21; Max Power: 5kw; Working Position: Vertical; Max Height: 190.5mm; Max Diameter: 66mm; Max Weight: 1.1kg; Cooling: Forced Air;	Encapsulation Structure: Foam Packing; Installation: Vertical; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Structure: Vacuum; Material: Metal Ceramic; Filament Voltage: 6.3V; Filament Current: 35A; Amplifcation Factor: 21; Max Power: 5kw; Working Position: Vertical; Max Height: 190.5mm; Max Diameter: 66mm; Max Weight: 1.1kg; Cooling: Forced Air;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Diffusion; Material: Silicon; MFG.: VISHAY; Quality: Genuine New Original; Package: SOT-23; D/C: 18+;	Encapsulation Structure: Other; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Material: Metal Ceramic; Filament Voltage: 7.5V; Filament Current: 51.5A; Amplifcation Factor: 22; Working Position: Vertical; Power: 4000W; Max Height: 228.68mm; Max Diameter: 105.7mm; Max Weight: 3.4kg; Cooling: Forced Air;
Supplier Name	Shenzhen Jin Da Peng Technology Co., Ltd.	Ningbo Setec Electron Co., Ltd.	Ningbo Setec Electron Co., Ltd.	Shenzhen Semilotec Co., Ltd.	Ningbo Setec Electron Co., Ltd.
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