New Original G4PC40ud Transistor Irg4PC40ud pictures & photos

New Original G4PC40ud Transistor Irg4PC40ud

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Price

Min. Order Reference FOB Price

1 Piece US$0.10-0.20 / Piece

Sepcifications

Shape DIP
Shielding Type Sharp Cutoff Shielding Tube
Cooling Method Air Cooled Tube
Working Frequency High Frequency
Structure Alloy
Encapsulation Structure Ceramic Packaged Transistor
Power Level High Power
Material Iron and Plastic
Transport Package Tube
Specification iron and plastic
Origin Chn
Brand Name Original
Product Transistor
Subcategory Igbts
Product Category IGBT Transistors
Product Type IGBT Transistor
Shipping by DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post

Product Description

Product Paramenters Mounting Style: Through Hole Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.15 V Maximum Gate Emitter Voltage: 20 V Continuous Collector Current at 25 C: 40 A Pd - Power Dissipation: 160 W Minimum Operating ...

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Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Since 2016

Audited Supplier

Rating & Reviews： 5.0/5.0

(1 Reviews)

Business Type Trading Company
Main Products Transistor, IC, Rectifier
Number of Employees 18
Year of Establishment 2008-09-17
Plant Area 250 square meters
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays

Transistor Comparison

	New Original G4PC40ud Transistor Irg4PC40ud Contact Now	Quick View G26n02K to-252 N-Channel Power Rectifiers Electronic Components Transistor Mosfet with RoHS Contact Now	Quick View Gt52n10d5 Dfn5*6-8L Power Transistor Substitute of Bsc070n10ns5 100V N-Channel Mosfet Contact Now	Quick View Gt095n10K Substitute of Dmt10h010lk3 100V, to-252, D-Park, Power Transistor, Mosfet Contact Now	Quick View Gc11n65D5 Dfn5*6-8L 650V 11A 78W N-Channel Vgs (th) Max 4V Semiconductor Power Transistor Mosfet Contact Now

Transaction Info
	New Original G4PC40ud Transistor Irg4PC40ud Contact Now	Quick View G26n02K to-252 N-Channel Power Rectifiers Electronic Components Transistor Mosfet with RoHS Contact Now	Quick View Gt52n10d5 Dfn5*6-8L Power Transistor Substitute of Bsc070n10ns5 100V N-Channel Mosfet Contact Now	Quick View Gt095n10K Substitute of Dmt10h010lk3 100V, to-252, D-Park, Power Transistor, Mosfet Contact Now	Quick View Gc11n65D5 Dfn5*6-8L 650V 11A 78W N-Channel Vgs (th) Max 4V Semiconductor Power Transistor Mosfet Contact Now
Price	US $ 0.10-0.20/ Piece	US $ 0.009-0.90/ Piece	US $ 0.009-0.90/ Piece	US $ 0.009-0.90/ Piece	US $ 0.009-0.90/ Piece
Min Order	1 Pieces	20 Pieces	20 Pieces	20 Pieces	20 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Product Certification	-	RoHS, ISO	RoHS, ISO	RoHS, ISO	RoHS, ISO
Management System Certification	-	ISO 9001	ISO 9001	ISO 9001	ISO 9001
Trade Capacity
Export Markets	South America, Europe, Southeast Asia/ Mideast, Others	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	-	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: 1 Month(s)	Off-season: 1 Month(s)	Off-season: 1 Month(s)	Off-season: 1 Month(s)
Product Attributes
Specification	Shape: DIP; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Working Frequency: High Frequency; Structure: Alloy; Encapsulation Structure: Ceramic Packaged Transistor; Power Level: High Power; Material: Iron and Plastic; Brand Name: Original; Product: Transistor; Subcategory: Igbts; Product Category: IGBT Transistors; Product Type: IGBT Transistor; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post;	Shape: SMD; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Vdss: 20V; ID: 26A; RDS: 9mr (@ 4.5V); Pd: 33W; Package: to-252; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 3000PCS/Reel;	Function: Switch Transistor; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: 100V; ID: 71A; RDS: 6.5mΩ(Vgs=10V); Pd: 75W; Package: Dfn 56-8L;* Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 5000 PCS/Reel; Vth: 2.5V; CISS: 2808; Crss: 23;	Function: Switch Transistor; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: 100V; ID: 60A; RDS: 9mΩ(Vgs=10V); Pd: 63W; Package: to-252; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 50 PCS/Tube; Vth: 2.5V; CISS: 2275; Crss: 162;	Function: Switch Transistor; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: 650V; ID: 11A; RDS: 360mΩ(Vgs=10V)(Max); Pd: 78W; Package: Dfn56-8L;* Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 5000 PCS/Steel; Vth: 4V(Max); CISS: 901; Crss: 5.5;
Supplier Name	Shenzhen Jin Da Peng Technology Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.
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