Original 10sq045 12sq045 15sq045 R-6 Solar Schottky Diode pictures & photos

Original 10sq045 12sq045 15sq045 R-6 Solar Schottky Diode

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Price

Min. Order Reference FOB Price

500 Pieces US$0.002-0.10 / Piece

Sepcifications

Certification RoHS
Encapsulation Structure Chip Transistor
Working Frequency High Frequency
Function Photosensitive, Darlington Tube, Power Triode, Switching Triode, Rectifier
Structure NPN
Material Silicon
Transport Package Standard Packaging-
Specification Flat type
Trademark CHN
Origin Chn
Application Area Electrical and Electronics
Lead Free Status RoHS Compliant
Shipping by DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
Package R6

Product Description

Product Paramenters Company Profile Product packaging FAQ 1.Who are you? We are Manufacturer of High Quality China's Own Chips Included IC,Transistor,Resistor,Capacitors, Memory,IGBT, Mosfet,Traic/SCR,Optoelectronics.Almost all components of electronics in our ...

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Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Since 2016

Audited Supplier

Rating & Reviews： 5.0/5.0

(1 Reviews)

Business Type Trading Company
Main Products Transistor, IC, Rectifier
Number of Employees 18
Year of Establishment 2008-09-17
Plant Area 250 square meters
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays

15sq045 Comparison

	Original 10sq045 12sq045 15sq045 R-6 Solar Schottky Diode Contact Now	Quick View Juxing Mmbta42 300V300mA Sot-23 Plastic-Encapsulate Switching Transistors (NPN) Contact Now	Quick View Juxing 1A 60V 2n7002K N-Channel Enhancement Mode Mosfet with Sot-23 Contact Now	Gw80h65dfb IGBT Transistor 650V 120A 469 W DIP to-247 80h65 80n65 80n60 Contact Now	Quick View Juxing 3A 20V Si2302 N-Channel Enhancement Mode Mosfet with Sot-23 Contact Now

Transaction Info
	Original 10sq045 12sq045 15sq045 R-6 Solar Schottky Diode Contact Now	Quick View Juxing Mmbta42 300V300mA Sot-23 Plastic-Encapsulate Switching Transistors (NPN) Contact Now	Quick View Juxing 1A 60V 2n7002K N-Channel Enhancement Mode Mosfet with Sot-23 Contact Now	Gw80h65dfb IGBT Transistor 650V 120A 469 W DIP to-247 80h65 80n65 80n60 Contact Now	Quick View Juxing 3A 20V Si2302 N-Channel Enhancement Mode Mosfet with Sot-23 Contact Now
Price	US $ 0.002-0.10/ Piece	US $ 0.0183-0.0486/ Piece	US $ 0.0051-0.0156/ Piece	US $ 0.8/ Piece	US $ 0.0055-0.0156/ Piece
Min Order	500 Pieces	3000 Pieces	3000 Pieces	1 Pieces	3000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal	T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal	L/C, T/T, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	-	RoHS, CE, ISO, CCC
Management System Certification	-	-	-	GMP	-
Trade Capacity
Export Markets	South America, Europe, Southeast Asia/ Mideast, Others	Domestic	Domestic	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	Domestic
Annual Export Revenue	-	-	-	-	-
Business Model	-	-	-	OEM	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	-	-
Product Attributes
Specification	Encapsulation Structure: Chip Transistor; Working Frequency: High Frequency; Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode, Rectifier; Structure: NPN; Material: Silicon; Application Area: Electrical and Electronics; Lead Free Status: RoHS Compliant; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post; Package: R6;	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: Low Frequency; Power Level: Small Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: 300V; V CEO: 300V; V Ebo: 5V; Package: Sot-23; Case: Molded Plastic; I C: 300mA;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; I D: 1A; V Dss: 60V; Package: Sot-23; Case: Molded Plastic;	IGBT Type: Trench Field Stop; Voltage - Collector Emitter Breakdown (M: 650 V; Current - Collector (IC) (Max): 120 a; Current - Collector Pulsed (Icm): 240 a; Vce(on) (Max) @ Vge, IC: 2V @ 15V, 80A; Power - Max: 469 W; Switching Energy: 2.1mj (on), 1.5mj (off); Gate Charge: 414 Nc; Td (on/off) @ 25°c: 84ns/280ns; Test Condition: 400V, 80A, 10ohm, 15V; Reverse Recovery Time (Trr): 85 Ns; Operating Temperature: -55°c ~ 175°c (Tj); Mounting Type: Through Hole; Package / Case: to-247-3; Base Product Number: Stgw80;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; I D: 3A; V Dss: 20V; Package: Sot-23; Case: Molded Plastic;
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