2sc4161 Switching Regulator Applications

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Price

Purchase Qty. Reference FOB Price

10-9,999 Pieces US$2.00

10,000+ Pieces US$0.80

Sepcifications

Certification RoHS
Encapsulation Structure Chip Transistor
Working Frequency High Frequency
Function Photosensitive, Darlington Tube, Power Triode, Switching Triode

Product Description

2SC4161 Switching Regulator Applications product information · High breakdown voltage, high reliability. · High-speed switching (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. ...

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Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Since 2016

Audited Supplier

Rating & Reviews： 5.0/5.0

(1 Reviews)

Business Type Trading Company
Main Products Transistor, IC, Rectifier
Number of Employees 18
Year of Establishment 2008-09-17
Plant Area 250 square meters
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays

Transformer Comparison

	2sc4161 Switching Regulator Applications Contact Now	Quick View Original Ixta34n65X2 N-Channel 650V 34A (Tc) 540W (Tc) 34n65 Transistor Mosfet Contact Now	Original Ncep15t14 in Stock 150V 140A 320W N-Channel to-220 Mosfet Transistor 15t14 Contact Now	Quick View Original Ao4459 P-Channel 30V 6.5A (Ta) 3.1W (Ta) Mosfet Transistor in Stock Contact Now	Transistor Sq2319ads-T1_Be3 Mosfet Transistor P-Channel 40V 4.6A Sot23-3 Contact Now

Transaction Info
	2sc4161 Switching Regulator Applications Contact Now	Quick View Original Ixta34n65X2 N-Channel 650V 34A (Tc) 540W (Tc) 34n65 Transistor Mosfet Contact Now	Original Ncep15t14 in Stock 150V 140A 320W N-Channel to-220 Mosfet Transistor 15t14 Contact Now	Quick View Original Ao4459 P-Channel 30V 6.5A (Ta) 3.1W (Ta) Mosfet Transistor in Stock Contact Now	Transistor Sq2319ads-T1_Be3 Mosfet Transistor P-Channel 40V 4.6A Sot23-3 Contact Now
Price	US $ 0.80-2.00/ Piece	US $ 2/ Piece	US $ 0.5/ Piece	US $ 0.05/ Piece	US $ 0.0615-0.08/ Piece
Min Order	10 Pieces	20 Pieces	100 Pieces	100 Pieces	100 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS	RoHS	RoHS	RoHS	RoHS, ISO
Management System Certification	-	GMP	GMP	GMP	GMP
Trade Capacity
Export Markets	South America, Europe, Southeast Asia/ Mideast, Others	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	-	OEM	OEM	OEM	OEM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	-	-
Product Attributes
Specification	Encapsulation Structure: Chip Transistor; Working Frequency: High Frequency; Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Power Level: Medium Power; Material: Silicon; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 650 V; Current - Continuous Drain (ID) @25c: 34A (Tc); Drive Voltage (Max RDS on, Min RDS on): 10V; RDS on (Max) @ ID, Vgs: 96mohm @ 17A, 10V; Vgs(Th) (Max) @ ID: 5V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 54 Nc @ 10 V; Vgs (Max): ±30V; Input Capacitance (CISS) (Max) @ Vds: 3000 PF @ 25 V; Power Dissipation (Max): 540W (Tc);	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Power Level: Medium Power; Material: Silicon; Drain Source Voltage (Vdss): 150V; Continuous Drain Current (ID): 140A; Drain Source on Resistance (RDS(on)@Vgs,: 6.2mΩ@10V,70A; Power Dissipation (Pd): 320W; Gate Threshold Voltage (Vgs(Th)@ID): 4V@250ua; Type: N Channel;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Power Level: Medium Power; Material: Silicon; Fet Type: N-Channelp-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 30 V; Current - Continuous Drain (ID) @25c: 6.5A (Ta); Drive Voltage (Max RDS on, Min RDS on): 4.5V, 10V; RDS on (Max) @ ID, Vgs: 46mohm @ 6.5A, 10V; Vgs(Th) (Max) @ ID: 2.5V @ 250µa; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 830 PF @ 15 V; Power Dissipation (Max): 3.1W (Ta);	Encapsulation Structure: Standard; Installation: SMD Triode; Working Frequency: Standard; Power Level: Standard; Function: Standard; Structure: Standard; Material: Silicon; Package: Sot23-3; Fet Type: P-Channel; Base Product Number: Sq2319; Technology: Mosfet (Metal Oxide);
Supplier Name	Shenzhen Jin Da Peng Technology Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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