High Quality Package to-3p Fqa48n20 Mosfet Transistor

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Price

Min. Order Reference FOB Price

5 Pieces US$0.50-1.50 / Piece

Sepcifications

Function Microwave Transistor, Switch Transistor
Specification standard
Trademark /
Origin China
Product Number Fqa48n20
Description /
Product Category Transistors
Series Fqa48n20
Base Product Number Fqa4

Product Description

High Quality Package TO-3P FQA48N20 MOSFET Transistor FET Type;N-Channel Technology;MOSFET (Metal Oxide) Drain to Source Voltage (Vdss);200 V Current - Continuous Drain (Id) @ 25°C;48A (Tc) Drive Voltage (Max Rds On, Min Rds On);10V

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Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Since 2016

Audited Supplier

Rating & Reviews： 5.0/5.0

(1 Reviews)

Business Type Trading Company
Main Products Transistor, IC, Rectifier
Number of Employees 18
Year of Establishment 2008-09-17
Plant Area 250 square meters
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays

Transistor Comparison

	High Quality Package to-3p Fqa48n20 Mosfet Transistor Contact Now	Quick View Silicon Carbide Schottky Diode VRRM=1200V IF=62A QC=222nC fetures applications High-frequency operation YJD112040NGG2-B1-0000HF Contact Now	Quick View IGBT Power Module 10μs short circuit capability 1200V/300A 2 in one-package Fetures SEMICONDUCTOR Applications GD300HFX120C2S Contact Now	Quick View IGBT Power Module 6μs short circuit capability 650V/600A 2 in one-package Fetures SEMICONDUCTOR Applications GD600HFX65C6S Contact Now	Quick View Original Integrated Circuits Nsr0320MW2t1g 20V 500mv@900mA 1A SOD-323 Schottky Barrier Diodes (SBD) RoHS Bom Service Contact Now

Transaction Info
	High Quality Package to-3p Fqa48n20 Mosfet Transistor Contact Now	Quick View Silicon Carbide Schottky Diode VRRM=1200V IF=62A QC=222nC fetures applications High-frequency operation YJD112040NGG2-B1-0000HF Contact Now	Quick View IGBT Power Module 10μs short circuit capability 1200V/300A 2 in one-package Fetures SEMICONDUCTOR Applications GD300HFX120C2S Contact Now	Quick View IGBT Power Module 6μs short circuit capability 650V/600A 2 in one-package Fetures SEMICONDUCTOR Applications GD600HFX65C6S Contact Now	Quick View Original Integrated Circuits Nsr0320MW2t1g 20V 500mv@900mA 1A SOD-323 Schottky Barrier Diodes (SBD) RoHS Bom Service Contact Now
Price	US $ 0.50-1.50/ Piece	US $ 0.77/ Piece	US $ 330/ Piece	US $ 625/ Piece	US $ 0.1/ Piece
Min Order	5 Pieces	1000 Pieces	1 Pieces	1 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal
Quality Control
Product Certification	-	RoHS	RoHS	RoHS	RoHS, CE, ISO
Management System Certification	-	-	-	-	ISO 9001
Trade Capacity
Export Markets	South America, Europe, Southeast Asia/ Mideast, Others	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	-	OEM, ODM	OEM, ODM	OEM, ODM	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-
Product Attributes
Specification	Function: Microwave Transistor, Switch Transistor; Product Number: Fqa48n20; Description: /; Product Category: Transistors; Series: Fqa48n20; Base Product Number: Fqa4;	Function: Switch Transistor; Encapsulation Structure: TO-247AC; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Power Level: High Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Power Level: Small Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;
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