Original Insulated Gate Bipolar IGBT 1200V 75A 300W pictures & photos

Original Insulated Gate Bipolar IGBT 1200V 75A 300W

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Price

Min. Order Reference FOB Price

30 Pieces US$11.211 / Piece

Sepcifications

Function IGBT Transistor
Transport Package Pallet/Tube
Specification Package
Fet Type N-Channel
Mounting Type Through Hole
Conductive Mode Enhanced
Description IGBT Transistors 75 AMPS 1200V 2.5 RDS
Product Category IGBT Transistor
Product Number Ixgh45n120
Detailed Description IGBT 1200V 75A 300W To247
Voltage - Collector Emitter Breakdown 1200V
Subcategory IGBT

Product Description

Product Attributes Mounting Style: Through Hole Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Maximum Gate Emitter Voltage: 20 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Packaging: Tube Continuous Collector Current Ic Max: 75 A ...

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Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Since 2016

Audited Supplier

Rating & Reviews： 5.0/5.0

(1 Reviews)

Business Type Trading Company
Main Products Transistor, IC, Rectifier
Number of Employees 18
Year of Establishment 2008-09-17
Plant Area 250 square meters
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays

IGBT Comparison

	Original Insulated Gate Bipolar IGBT 1200V 75A 300W Contact Now	Quick View Vds 650V RDS38mΩ Fast EV Charing Piles Mosfet Contact Now	Quick View Telecom Power Vds 650V RDS38mΩ Fast Recovery Diode Mosfet Contact Now	Quick View Moter Driver Aec-Q101 Vds 650V RDS99mΩ Mosfet Contact Now	Quick View Totem-Pole Bridgeless Synchronous Rectification Systems Fsmos Mosfet Contact Now

Transaction Info
	Original Insulated Gate Bipolar IGBT 1200V 75A 300W Contact Now	Quick View Vds 650V RDS38mΩ Fast EV Charing Piles Mosfet Contact Now	Quick View Telecom Power Vds 650V RDS38mΩ Fast Recovery Diode Mosfet Contact Now	Quick View Moter Driver Aec-Q101 Vds 650V RDS99mΩ Mosfet Contact Now	Quick View Totem-Pole Bridgeless Synchronous Rectification Systems Fsmos Mosfet Contact Now
Price	US $ 11.211/ Piece	US $ 0.2/ Piece	US $ 0.2/ Piece	US $ 0.2/ Piece	US $ 0.2/ Piece
Min Order	30 Pieces	660 Pieces	660 Pieces	660 Pieces	660 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal	T/T	T/T	T/T	T/T
Quality Control
Product Certification	-	RoHS, ISO	RoHS, ISO	RoHS, ISO	RoHS, ISO
Management System Certification	-	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001
Trade Capacity
Export Markets	South America, Europe, Southeast Asia/ Mideast, Others	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	-	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Function: IGBT Transistor; Fet Type: N-Channel; Mounting Type: Through Hole; Conductive Mode: Enhanced; Description: IGBT Transistors 75 AMPS 1200V 2.5 RDS; Product Category: IGBT Transistor; Product Number: Ixgh45n120; Detailed Description: IGBT 1200V 75A 300W To247; Voltage - Collector Emitter Breakdown: 1200V; Subcategory: IGBT;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Description: Extremely Low Switching Loss; Characteristics: Excellent Stability and Uniformity; Applications: PC Power; Industries: LED Lighting; Application: Car Inverter;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Description: Extremely Low Switching Loss; Characteristics: Excellent Stability and Uniformity; Applications: PC Power; Industries: LED Lighting; Application: Car Inverter;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Description: Extremely Low Switching Loss; Characteristics: Excellent Stability and Uniformity; Applications: PC Power; Industries: LED Lighting;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Description: Extremely Low Switching Loss; Characteristics: Excellent Stability and Uniformity; Applications: PC Power; Industries: LED Lighting;
Supplier Name	Shenzhen Jin Da Peng Technology Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.
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