2clg30kv/10mA Particle Accelerator Diode for Electrostatic Powder Coating, Electrostatic Flocking

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Details
Company Profile

Price

Min. Order Reference FOB Price

100 Pieces US$1.00-67.00 / Piece

Sepcifications

  • Application Diode, Rectification
  • Batch Number 2010+
  • Manufacturing Technology Discrete Device
  • Material Element Semiconductor
  • Model 2clg30kv/10mA
  • Package Through-Hole
  • Signal Processing Analog Digital Composite and Function
  • Type P-Type Semiconductor
  • Transport Package 50PCS in a Box
  • Trademark Leadsun
  • Origin Anshan China
  • Tj -40oc~+120oc
  • Use Laser
  • Feature More Size Available
  • Brand Leadsun

Product Description

2CLG30KV/10mA particle accelerator diode for electrostatic powder coating, electrostatic flocking Feature: 1. Avalanche characteristic 2. More size available 3. Vacuum molded, non-corrosive epoxy resin case ...

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Transaction Info
Price US $ 1.00-67.00/ Piece US $ 5.00-10.00/ pc US $ 16.00-21.00/ pc US $ 5.00-10.00/ pc US $ 7.00-12.00/ pc
Min Order 100 Pieces 100 pc 100 pc 100 pc 100 pc
Payment Terms T/T, Western Union T/T, Paypal T/T, Paypal T/T, Paypal T/T, Paypal
Quality Control
Management System Certification ISO 9001 ISO 9001, ISO 29001 ISO 9001, ISO 29001 ISO 9001, ISO 29001 ISO 9001, ISO 29001
Trade Capacity
Export Markets - - - - -
Annual Export Revenue - - - - -
Business Model - - - - -
Average Lead Time - - - - -
Product Attributes
Specification
Application: Diode, Rectification;
Batch Number: 2010+;
Manufacturing Technology: Discrete Device;
Material: Element Semiconductor;
Model: 2clg30kv/10mA;
Package: Through-Hole;
Signal Processing: Analog Digital Composite and Function;
Type: P-Type Semiconductor;
Tj: -40oc~+120oc;
Use: Laser;
Feature: More Size Available;
Brand: Leadsun;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 100±0.2mm;
Thickness: 400±25μm;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 150±0.2mm;
Thickness: 675±25μm;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 50±0.2mm;
Thickness: 280±25μm;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 76±0.2mm;
Thickness: 380±25μm;
Supplier Name

Anshan Leadsun Electronics Co., Ltd.

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier