High Voltage Rectifier Blocks with Mounting Slots Hc5

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Details
Company Profile

Price

Min. Order Reference FOB Price

100 Pieces Negotiable

Sepcifications

  • Application Rectification
  • Batch Number 2010+
  • Manufacturing Technology Discrete Device
  • Material Element Semiconductor
  • Model Hc5
  • Package Through-Hole
  • Signal Processing Analog Digital Composite and Function
  • Type P-Type Semiconductor
  • Transport Package 100PCS in One Carton
  • Trademark Leadun
  • Origin Anshan
  • Brand Leadsun

Product Description

HC5 High voltage rectifier blocks using high reliable mesa structure and diffusion craftwork, epoxy resin molded in compact structure. Feature: Avalanche characteristic More sizes to choose vacuum molded, non-corrosive epoxy resin case Tj:-40ºC--+120ºC ...

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High Voltage Modular Comparison
Transaction Info
Price Negotiable US $ 36.00-41.00/ pc US $ 10.00-100.00/ pc US $ 43.00-48.00/ pc US $ 10.00-100.00/ pc
Min Order 100 Pieces 100 pc 25 pc 100 pc 25 pc
Payment Terms T/T, Western Union T/T, Paypal T/T, Paypal T/T, Paypal T/T, Paypal
Quality Control
Management System Certification ISO 9001 ISO 9001, ISO 29001 ISO 9001, ISO 29001 ISO 9001, ISO 29001 ISO 9001, ISO 29001
Trade Capacity
Export Markets - - - - -
Annual Export Revenue - - - - -
Business Model - - - - -
Average Lead Time - - - - -
Product Attributes
Specification
Application: Rectification;
Batch Number: 2010+;
Manufacturing Technology: Discrete Device;
Material: Element Semiconductor;
Model: Hc5;
Package: Through-Hole;
Signal Processing: Analog Digital Composite and Function;
Type: P-Type Semiconductor;
Brand: Leadsun;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Front Side: Polished;
Backside: Etched;
Diameter: 150±0.3mm;
Thickness: 675±25mm;
Oxide Thickness: 5000A;
Ttv: ≤10μm;
Warp: ≤30μm;
Bow: ≤30μm;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 300±0.2mm;
Thickness: 775±25μm;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Front Side: Polished;
Backside: Etched;
Diameter: 150±0.3mm;
Thickness: 675±25mm;
Oxide Thickness: 10000A;
Ttv: ≤10μm;
Warp: ≤30μm;
Bow: ≤30μm;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 300±0.2mm;
Thickness: 775±25μm;
Supplier Name

Anshan Leadsun Electronics Co., Ltd.

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier