General Purpose Resistor-Capacitor Compensated 3hg10RC Ultra Fast Recovery High Voltage Rectifier Silicon Assembly

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Price

Min. Order Reference FOB Price

100 Pieces US$3.10-7.70 / Piece

Sepcifications

Application Rectification
Batch Number 2010+
Manufacturing Technology Discrete Device
Material Element Semiconductor
Model 3hg10RC
Package Through-Hole
Signal Processing Analog Digital Composite and Function
Type P-Type Semiconductor
Transport Package 50PCS in a Box
Trademark Leadsun
Origin Anshan China
Feature More Sizes to Choose
Use Electrostatic Cleaning
Max Forward Surge Current 150A
Max Forward Voltage 9.0V
Brand Leadsun

Product Description

Feature: Avalanche characteristic More sizes to choose vacuum molded, non-corrosive epoxy resin case Tj:-40ºC--+120ºC Application: High voltage rectifier used in electrostatic cleaning ...

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Anshan Leadsun Electronics Co., Ltd.

Gold Member Since 2014

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products High Voltage Diode
Number of Employees 24
Year of Establishment 2001-07-10
Management System Certification ISO9001:2015
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

3hg10RC Comparison

	General Purpose Resistor-Capacitor Compensated 3hg10RC Ultra Fast Recovery High Voltage Rectifier Silicon Assembly Contact Now	Quick View 6inch Wafer P-Type 150mm 100A Oxidized Silicon Wafer Contact Now	Quick View 8 Inch N/P Type Polished Silicon 200mm 300A Wafer Silicon Oxide Wafer Contact Now	Quick View 6 Inch P Type Polished Epi Wafer 300A Silicon Oxide Wafer Contact Now	Quick View 8 Inch Monocrystalline N Type Silicon Oxide Wafers Contact Now

Transaction Info
	General Purpose Resistor-Capacitor Compensated 3hg10RC Ultra Fast Recovery High Voltage Rectifier Silicon Assembly Contact Now	Quick View 6inch Wafer P-Type 150mm 100A Oxidized Silicon Wafer Contact Now	Quick View 8 Inch N/P Type Polished Silicon 200mm 300A Wafer Silicon Oxide Wafer Contact Now	Quick View 6 Inch P Type Polished Epi Wafer 300A Silicon Oxide Wafer Contact Now	Quick View 8 Inch Monocrystalline N Type Silicon Oxide Wafers Contact Now
Price	US $ 3.10-7.70/ Piece	US $ 35.00-40.00/ pc	US $ 35.00-40.00/ pc	US $ 35.00-40.00/ pc	US $ 36.00-41.00/ pc
Min Order	100 Pieces	100 pc	100 pc	100 pc	100 pc
Payment Terms	T/T, Western Union, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Management System Certification	ISO 9001	ISO 9001, ISO 29001	ISO 9001, ISO 29001	ISO 9001, ISO 29001	ISO 9001, ISO 29001
Trade Capacity
Export Markets	-	-	-	-	-
Annual Export Revenue	-	-	-	-	-
Business Model	-	-	-	-	-
Average Lead Time	-	-	-	-	-
Product Attributes
Specification	Application: Rectification; Batch Number: 2010+; Manufacturing Technology: Discrete Device; Material: Element Semiconductor; Model: 3hg10RC; Package: Through-Hole; Signal Processing: Analog Digital Composite and Function; Type: P-Type Semiconductor; Feature: More Sizes to Choose; Use: Electrostatic Cleaning; Max Forward Surge Current: 150A; Max Forward Voltage: 9.0V; Brand: Leadsun;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Front Side: Polished; Backside: Etched; Diameter: 150±0.3mm; Thickness: 675±25mm; Oxide Thickness: 100A; Ttv: ≤10μm; Warp: ≤30μm; Bow: ≤30μm;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Front Side: Polished; Backside: Etched; Diameter: 200±0.2mm; Thickness: 725±25mm; Oxide Thickness: 300A; Ttv: ≤25μm; Warp: ≤40μm; Bow: ≤40μm;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Front Side: Polished; Backside: Etched; Diameter: 150±0.3mm; Thickness: 675±25mm; Oxide Thickness: 300A; Ttv: ≤10μm; Warp: ≤30μm; Bow: ≤30μm;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Front Side: Polished; Backside: Etched; Diameter: 200±0.2mm; Thickness: 725±25mm; Oxide Thickness: 5000A; Ttv: ≤25μm; Warp: ≤40μm; Bow: ≤40μm;
Supplier Name	Anshan Leadsun Electronics Co., Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.
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