HDQL80KV/0.2A Bridge High Power Rectifier Diode Module

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Details
Company Profile

Price

Min. Order Reference FOB Price

100 Pieces Negotiable

Sepcifications

  • Application Diode, Rectification
  • Batch Number 2010+
  • Manufacturing Technology Discrete Device
  • Material Element Semiconductor
  • Model Hdql80kv/0.2A
  • Package Through-Hole
  • Signal Processing Analog Digital Composite and Function
  • Type P-Type Semiconductor
  • Transport Package 50PCS in a Box
  • Trademark Leadsun
  • Origin Anshan China
  • Tj -40oc~+120oc
  • Use Electrostatic Cleaning
  • Feature More Size Available
  • Brand Leadsun

Product Description

HDQL80KV/0.2A bridge high power rectifier diode module Feature: 1. Avalanche characteristic 2. More size available 3. Vacuum molded, non-corrosive epoxy resin case 4. Tj: -40ºC~+120ºC Application: ...

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Hdql80kv/0.2A Comparison
Transaction Info
Price Negotiable US $ 10.00-100.00/ pc US $ 10.00-100.00/ pc US $ 10.00-100.00/ pc US $ 43.00-48.00/ pc
Min Order 100 Pieces 25 pc 25 pc 25 pc 100 pc
Payment Terms T/T, Western Union T/T, Paypal T/T, Paypal T/T, Paypal T/T, Paypal
Quality Control
Management System Certification ISO 9001 ISO 9001, ISO 29001 ISO 9001, ISO 29001 ISO 9001, ISO 29001 ISO 9001, ISO 29001
Trade Capacity
Export Markets - - - - -
Annual Export Revenue - - - - -
Business Model - - - - -
Average Lead Time - - - - -
Product Attributes
Specification
Application: Diode, Rectification;
Batch Number: 2010+;
Manufacturing Technology: Discrete Device;
Material: Element Semiconductor;
Model: Hdql80kv/0.2A;
Package: Through-Hole;
Signal Processing: Analog Digital Composite and Function;
Type: P-Type Semiconductor;
Tj: -40oc~+120oc;
Use: Electrostatic Cleaning;
Feature: More Size Available;
Brand: Leadsun;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 300±0.2mm;
Thickness: 775±25μm;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 300±0.2mm;
Thickness: 775±25μm;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 300±0.2mm;
Thickness: 775±25μm;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Front Side: Polished;
Backside: Etched;
Diameter: 150±0.3mm;
Thickness: 675±25mm;
Oxide Thickness: 10000A;
Ttv: ≤10μm;
Warp: ≤30μm;
Bow: ≤30μm;
Supplier Name

Anshan Leadsun Electronics Co., Ltd.

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier