Min. Order Reference FOB Price
1000 Pieces US$0.71 / Piece
Product Description
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 650V ID(25°C) 37A RDS(on) 60mΩ TO-247AB Fetures Applications YJD206560NCTG1Q Features - High speed switching - Essentially no switching losses - Reduction of heat sink requirements - Maximum working temperature at 175 °C - ...