High Voltage Diode 500kv

US$0.95 / Piece

Silicon Carbide Schottky Diode VRRM=650V IF(135°C)=3.6A QC=5.2nC fetures applications Zero forward recovery voltage YJD106502PQG3 pictures & photos

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What is Silicon Carbide Schottky Diode VRRM=650V IF(135°C)=3.6A QC=5.2nC fetures applications Zero forward recovery voltage YJD106502PQG3

Name: Silicon Carbide Schottky Diode VRRM=650V IF(135&deg;C)=3.6A QC=5.2nC fetures applications Zero forward recovery voltage YJD106502PQG3
Uploaded: 2024-05-05T18:08:33+08:00
Description: Silicon Carbide Schottky Diode VRRM=650V IF(135°C)=3.6A QC=5.2nC fetures applications Zero forward recovery voltage YJD106502PQG3 Features - Positive temperature coefficient - Temperature-indepe

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Price

Min. Order Reference FOB Price

1000 Pieces US$0.95 / Piece

Sepcifications

Certification RoHS
Function Switch Transistor
Material Silicon
Transport Package Plastic Package
Specification Customized
Trademark MR
Origin Guangdong, China
Features1 Extremely Low Switching Loss
Features2 Excellent Stability and Uniformity
Features3 100% Avalanche Tested
Features4 Built-in ESD Diode
Application1 Switch Mode Power Supply (SMPS)
Application2 Power Factor Correction (Pfc)
Application3 Uninterruptible Power Supply (UPS)
Application4 AC to DC Converters
Application5 Telecom
Application6 TV Power & LED Lighting Power

Product Description

Silicon Carbide Schottky Diode VRRM=650V IF(135°C)=3.6A QC=5.2nC fetures applications Zero forward recovery voltage YJD106502PQG3 Features - Positive temperature coefficient - Temperature-independent switching - Maximum working temperature at 175 °C - Unipolar devices and zero ...

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Dongguan Merry Electronic Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews: 5.0/5.0

(5 Reviews)

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics, Light Industry & Daily Use, Lights & Lighting
Main Products Diode, Transistor, Mosfet, Bridge, IC, Integrated Circuits, Microcontroller, Schottky Diodes, Super Junction Mosfets, Tvs ESD Protection
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

High Voltage Diode 500kv Comparison

	Silicon Carbide Schottky Diode VRRM=650V IF(135°C)=3.6A QC=5.2nC fetures applications Zero forward recovery voltage YJD106502PQG3 Contact Now	Bu208 8A 1500V Ultrasonic Power Transistor Bu208A Contact Now	Irfb4310zpbf to-220 New Original Irfb4310z N-Channel Field Effect Transistor Mosfet Contact Now	Mjl21193 Mjl21194 Bipolar Audio Amplifier Transistor 250V 16A Contact Now	NPN 25V 2A High Hfe Low Frequency Amplifier Transistor Contact Now

Transaction Info
	Silicon Carbide Schottky Diode VRRM=650V IF(135°C)=3.6A QC=5.2nC fetures applications Zero forward recovery voltage YJD106502PQG3 Contact Now	Bu208 8A 1500V Ultrasonic Power Transistor Bu208A Contact Now	Irfb4310zpbf to-220 New Original Irfb4310z N-Channel Field Effect Transistor Mosfet Contact Now	Mjl21193 Mjl21194 Bipolar Audio Amplifier Transistor 250V 16A Contact Now	NPN 25V 2A High Hfe Low Frequency Amplifier Transistor Contact Now
Price	US $ 0.95/ Piece	US $ 12/ Piece	US $ 1.30-1.50/ Piece	US $ 0.10-1.98/ Piece	US $ 0.04/ Piece
Min Order	1000 Pieces	10 Pieces	10 Pieces	10 Pieces	2000 Pieces
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	RoHS	-	RoHS	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	-	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	US$5 Million - US$10 Million	-	-	-	-
Business Model	OEM, ODM	-	-	-	-
Average Lead Time	Off Season Lead Time: within 15 workdays Peak Season Lead Time: within 15 workdays	Off Season Lead Time: within 15 workdays Peak Season Lead Time: within 15 workdays	Off Season Lead Time: within 15 workdays Peak Season Lead Time: within 15 workdays	Off Season Lead Time: within 15 workdays Peak Season Lead Time: within 15 workdays	Off Season Lead Time: within 15 workdays Peak Season Lead Time: within 15 workdays
Product Attributes
Specification	Function: Switch Transistor; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Air Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor; Working Frequency: Low Frequency; Structure: Alloy; Encapsulation Structure: Plastic Sealed Transistor; Material: Silicon (Si); Product Category: Bipolar Transistor - Bjt; Mounting Style: Through Hole; Transistor Polarity: NPN; Product Number: Bu208A; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post; Operating Temperature: 175 C (Tj); Emitter- Base Voltage Vebo: 10 V; Product Type: Bjts - Bipolar Transistors; Series: Bu208;	Shape: DIP; Shielding Type: /; Cooling Method: /; Function: High Back Pressure Transistor; Working Frequency: High Frequency; Structure: /; Encapsulation Structure: DIP; Fet Type: N-Channel; Power Dissipation (Max): 250W (Tc); Drain to Source Voltage (Vdss): 100 V; Category: Transistors;	Material: Germanium; Packaging: Tube; Subcategory: Transistors; Product Category: Bipolar Transistors; Transistor Polarity: NPN; Product Type: Transistors;	Function: Amplifier Transistor; Encapsulation Structure: Chip Transistor; Power Level: Medium Power; Material: Germanium; Brand Name: Original; Lead Free Status: RoHS Compliant; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post; Condition: Brand Newand Original;
Supplier Name	Dongguan Merry Electronic Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.
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