High Voltage Diode 500kv
US$0.76 / Piece
  • Recommend for you
  • What is -140V/-4A PNP General Purpose Amplifier, SOT-223, DPLS4140Z
  • What is -60V/-1A, PNP Plastic-Encapsulate Transistor, SOT-223, BCP52-16Q
  • What is 1200V/600A/2.8mΩ/18V SiC Mosfet Module, DWC3, ASC600N1200MD3

What is N-Channel Enhancement Mode Field Effect Transistor Halogen Free Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG65G04HJQ

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

1000 Pieces US$0.76 / Piece

Sepcifications

  • Certification RoHS
  • Function Switch Transistor
  • Encapsulation Structure PDFN5060-8L
  • Material Silicon
  • Transport Package Plastic Package
  • Specification Customized
  • Trademark YJ
  • Origin Guangdong, China
  • Features1 Extremely Low Switching Loss
  • Features2 Excellent Stability and Uniformity
  • Features3 100% Avalanche Tested
  • Features4 Built-in ESD Diode
  • Application1 Switch Mode Power Supply (SMPS)
  • Application2 Power Factor Correction (Pfc)
  • Application3 Uninterruptible Power Supply (UPS)
  • Application4 AC to DC Converters
  • Application5 Telecom
  • Application6 TV Power & LED Lighting Power

Product Description

N-Channel Enhancement Mode Field Effect Transistor Halogen Free Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG65G04HJQ Product Summary NMOS - VDS 40V - ID 65A - RDS(ON)( at VGS=10V) <6mohm ...

Learn More

High Voltage Diode 500kv Comparison
Transaction Info
Price US $ 0.76/ Piece US $ 0.15-2.45/ Piece US $ 0.0047/ Piece US $ 0.01/ Piece US $ 0.05/ Piece
Min Order 1000 Pieces 20 Pieces 1000 Pieces 10 Pieces 100 Pieces
Payment Terms L/C, T/T, D/P, Western Union, Paypal, Money Gram L/C, T/T, D/P T/T T/T, Western Union, Paypal T/T, Western Union, Paypal
Quality Control
Product Certification RoHS - RoHS, CE, ISO, CCC, SGS - RoHS
Management System Certification - - ISO 9001, HSE, GMP, QHSE, EICC, GAP, BREEAM, QSR, ISO 50001 GMP GMP
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, Eastern Europe, Africa, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue US$5 Million - US$10 Million - Above US$100 Million US$50 Million - US$100 Million US$50 Million - US$100 Million
Business Model OEM, ODM - OEM, ODM, Own Brand(ZG) OEM OEM
Average Lead Time Off Season Lead Time: within 15 workdays
Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Peak Season Lead Time: 1-3 months
- -
Product Attributes
Specification
Function: Switch Transistor;
Encapsulation Structure: PDFN5060-8L;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application2: Power Factor Correction (Pfc);
Application3: Uninterruptible Power Supply (UPS);
Application4: AC to DC Converters;
Application5: Telecom;
Application6: TV Power & LED Lighting Power;
Function: High Back Pressure Transistor, Switch Transistor;
Manufacturer Product Number: Ds2501;
Shape: ST;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Water Cooled Tube;
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor;
Working Frequency: Low Frequency;
Structure: Alloy;
Encapsulation Structure: Gold Sealed Transistor;
Power Level: Small Power;
Material: Silicon;
Shape: SMD;
Fet Type: P-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 30 V;
Current - Continuous Drain (ID) @ 25c: 100mA (Ta);
Drive Voltage (Max RDS on, Min RDS on): 2.5V, 4V;
RDS on (Max) @ ID, Vgs: 12ohm @ 10mA, 4V;
Vgs(Th) (Max) @ ID: 1.7V @ 100&micro;a;
Vgs (Max): &plusmn;20V;
Input Capacitance (CISS) (Max) @ Vds: 9.1 PF @ 3 V;
Power Dissipation (Max): 200MW (Ta);
Shape: SMT;
Material: Silicon;
Number of Channels: 1;
Voltage - Isolation: 2500vrms;
Current Transfer Ratio (Min): 100% @ 10mA;
Current Transfer Ratio (Max): 200% @ 10mA;
Turn on / Turn off Time (Typ): 7.5&micro;s, 5.7&micro;s;
Rise / Fall Time (Typ): 3.2&micro;s, 4.7&micro;s;
Input Type: DC;
Output Type: Transistor with Base;
Voltage - Output (Max): 30V;
Current - Output / Channel: 150mA;
Voltage - Forward (Vf) (Typ): 1.15V;
Current - DC Forward (If) (Max): 60 Ma;
Vce Saturation (Max): 400mv;
Operating Temperature: -40&deg;c ~ 100&deg;c;
Supplier Name

Dongguan Merry Electronic Co., Ltd.

Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Audited Supplier

Jiangsu Zhongxin Semiconductor Co., Ltd.

Gold Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Audited Supplier