Bridge Rectifier

US$0.14-0.15 / Piece

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30V/30A 7.5mΩ RU30C30M N-Channel Advanced Power Mosfet pictures & photos

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What is 30V/30A 7.5mΩ RU30C30M N-Channel Advanced Power Mosfet

Name: 30V/30A 7.5mΩ RU30C30M N-Channel Advanced Power Mosfet
Uploaded: 2023-09-18T13:47:24+08:00
Description: N-Channel Advanced Power Mosfet 30V/30A 7.5mΩ RU30C30M Company Profile Dongguan Merry Electronics Co., Ltd. was established in 2013 as a professional supplier of semiconductor discrete device

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Price

Purchase Qty. Reference FOB Price

5,000-9,999 Pieces US$0.15

10,000+ Pieces US$0.14

Sepcifications

Certification RoHS, CE, ISO, CCC
Shape GT
Shielding Type Remote Cut-Off Shielding Tube
Cooling Method Naturally Cooled Tube
Function High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency High Frequency
Structure Planar
Encapsulation Structure Chip Transistor
Power Level High Power
Material Silicon
Transport Package Plastic Package
Origin Guangdong, China
Features1 Extremely Low Switching Loss
Features2 Excellent Stability and Uniformity
Features3 100% Avalanche Tested
Features4 Built-in ESD Diode
Application1 Switch Mode Power Supply (SMPS)
Application3 Power Factor Correction (Pfc)
Application4 Uninterruptible Power Supply (UPS)
Application5 AC to DC Converters
Application6 Telecom, Solar

Product Description

N-Channel Advanced Power Mosfet 30V/30A 7.5mΩ RU30C30M Company Profile Dongguan Merry Electronics Co., Ltd. was established in 2013 as a professional supplier of semiconductor discrete device sales and technical services. The core management team has many years of industry background, ...

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Dongguan Merry Electronic Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics, Light Industry & Daily Use, Lights & Lighting
Main Products Diode, Transistor, Mosfet, Bridge, IC, Integrated Circuits, Microcontroller, Schottky Diodes, Super Junction Mosfets, Tvs ESD Protection
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Bridge Rectifier Comparison

	Quick View 30V/30A 7.5mΩ RU30C30M N-Channel Advanced Power Mosfet Contact Now	Quick View Gt110n06D3 60V 14A 2.4V Max N-Channel Dfn3*3-8L Power Transistor Electronic Component Mosfet Contact Now	Quick View Gt095n10t Substitute of Dmt10h Dmth10h 100V to-220 N Channel Power Transistor Mosfet Contact Now	Quick View Gt52n10t to-220 Power Transistor N Channel 100V, Electronic Component, Mosfet Contact Now	Quick View Gc11n65 to-252/220/220f N-Channel 650V 11A 78W Vgs (th) 4V Max Power Transistor Mosfet Contact Now

Transaction Info
	Quick View 30V/30A 7.5mΩ RU30C30M N-Channel Advanced Power Mosfet Contact Now	Quick View Gt110n06D3 60V 14A 2.4V Max N-Channel Dfn3*3-8L Power Transistor Electronic Component Mosfet Contact Now	Quick View Gt095n10t Substitute of Dmt10h Dmth10h 100V to-220 N Channel Power Transistor Mosfet Contact Now	Quick View Gt52n10t to-220 Power Transistor N Channel 100V, Electronic Component, Mosfet Contact Now	Quick View Gc11n65 to-252/220/220f N-Channel 650V 11A 78W Vgs (th) 4V Max Power Transistor Mosfet Contact Now
Price	US $ 0.14-0.15/ Piece	US $ 0.009-0.90/ Piece	US $ 0.009-0.90/ Piece	US $ 0.009-0.90/ Piece	US $ 0.009-0.90/ Piece
Min Order	5000 Pieces	20 Pieces	20 Pieces	20 Pieces	20 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Product Certification	RoHS, CE, ISO, CCC	RoHS, ISO	RoHS, ISO	RoHS, ISO	RoHS, ISO
Management System Certification	-	ISO 9001	ISO 9001	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: 1 Month(s)	Off-season: 1 Month(s)	Off-season: 1 Month(s)	Off-season: 1 Month(s)
Product Attributes
Specification	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application3: Power Factor Correction (Pfc); Application4: Uninterruptible Power Supply (UPS); Application5: AC to DC Converters; Application6: Telecom, Solar;	Function: Switch Transistor; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: 60V; ID: 14A; RDS: 10mΩ(Vgs=10V)(Max); Pd: 3.1W; Package: Dfn33-8L;* Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 5000 PCS/Steel; Vth: 2.4V(Max); CISS: 1300; Crss: 640;	Function: Switch Transistor; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: 100V; ID: 68A; RDS: 9mΩ(Vgs=10V); Pd: 78W; Package: to-220; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 50 PCS/Tube; Vth: 2.6V; CISS: 2018; Crss: 28;	Function: Switch Transistor; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: 100V; ID: 80A; RDS: 7.9mΩ(Vgs=10V); Pd: 75W; Package: to-220; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 50 PCS/Tube; Vth: 2.5V; CISS: 2626; Crss: 38;	Function: Switch Transistor; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: 650V; ID: 11A; RDS: 360mΩ(Vgs=10V)(Max); Pd: 78W; Package: to-252/220/220f; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 5000 PCS/Steel; Vth: 4V(Max); CISS: 901; Crss: 5.5;
Supplier Name	Dongguan Merry Electronic Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.
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