TM2G0080120D apply to Photovoltaic Inverter 1200V N-Channel Silicon Carbide Power MOSFET Video

Name: TM2G0080120D apply to Photovoltaic Inverter 1200V N-Channel Silicon Carbide Power MOSFET
Uploaded: 2023-08-22T11:37:28+08:00
Description: TM2G0080120D Apply To Photovoltaic Inverter 1200V N-Channel Silicon Carbide Power MOSFET Features: Optimized package with separate driver source pin High blocking voltage with low on-resistance High

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Price

Purchase Qty. Reference FOB Price

1,000-4,999 Pieces US$1.00

5,000+ Pieces US$0.10

Sepcifications

Certification RoHS, CE, ISO, CCC
Shape GT
Shielding Type Remote Cut-Off Shielding Tube
Cooling Method Naturally Cooled Tube
Function High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency High Frequency
Structure Planar
Encapsulation Structure Chip Transistor
Power Level High Power
Material Silicon
Transport Package Plastic Package
Specification Silicon Carbide
Trademark Merryelc
Origin Guangdong, China
Features1 Extremely Low Switching Loss
Features2 Excellent Stability and Uniformity
Features3 100% Avalanche Tested
Features4 Built-in ESD Diode
Application1 Switch Mode Power Supply (SMPS)
Application3 Power Factor Correction (Pfc)
Application4 Uninterruptible Power Supply (UPS)
Application5 AC to DC Converters
Application6 Telecom, Solar

Product Description

TM2G0080120D Apply To Photovoltaic Inverter 1200V N-Channel Silicon Carbide Power MOSFET Features: Optimized package with separate driver source pin High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) ...

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Dongguan Merry Electronic Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics, Light Industry & Daily Use, Lights & Lighting
Main Products Diode, Transistor, Mosfet, Bridge, IC, Integrated Circuits, Microcontroller, Schottky Diodes, Super Junction Mosfets, Tvs ESD Protection
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Silicon Carbide Mosfet Comparison

	Quick View TM2G0080120D apply to Photovoltaic Inverter 1200V N-Channel Silicon Carbide Power MOSFET Contact Now	Quick View Bat46wj, 115 Diode Schottky 250mA SMD Bat46wj 115 Bat46jfilm Bat46 Contact Now	Quick View Original Irf740bpbf Irf740 N-Channel 400V 10A 147W Mosfet Transistor Contact Now	Dmp2008ufg-7 Alternative Mosfet 19V 45A Dfn3X3 P Channel Mosfet Transistor Contact Now	Quick View Mosfet Manufacturer G16p03s P Channel 30V 16A Mosfet for Pd Contact Now

Transaction Info
	Quick View TM2G0080120D apply to Photovoltaic Inverter 1200V N-Channel Silicon Carbide Power MOSFET Contact Now	Quick View Bat46wj, 115 Diode Schottky 250mA SMD Bat46wj 115 Bat46jfilm Bat46 Contact Now	Quick View Original Irf740bpbf Irf740 N-Channel 400V 10A 147W Mosfet Transistor Contact Now	Dmp2008ufg-7 Alternative Mosfet 19V 45A Dfn3X3 P Channel Mosfet Transistor Contact Now	Quick View Mosfet Manufacturer G16p03s P Channel 30V 16A Mosfet for Pd Contact Now
Price	US $ 0.10-1.00/ Piece	US $ 0.01-1.00/ Piece	US $ 0.15/ Piece	US $ 0.08-0.09/ Piece	Negotiable
Min Order	1000 Pieces	1 Pieces	10 Pieces	20 Pieces	100 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Product Certification	RoHS, CE, ISO, CCC	-	RoHS	RoHS, ISO, SGS	RoHS, ISO
Management System Certification	-	GMP	GMP	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM	OEM	OEM	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	Off-season: 1 Month(s)	Off-season: 1 Month(s)
Product Attributes
Specification	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application3: Power Factor Correction (Pfc); Application4: Uninterruptible Power Supply (UPS); Application5: AC to DC Converters; Application6: Telecom, Solar;	Shape: SMD; Function: Circuit Protection; Diode Type: Schottky; Voltage - DC Reverse (Vr) (Max): 40 V; Current - Average Rectified (Io): 5A; Voltage - Forward (Vf) (Max) @ If: 550 Mv @ 5 a; Speed: Fast Recovery =< 500ns, > 200mA (Io); Current - Reverse Leakage @ Vr: 500 µa @ 40 V; Capacitance @ Vr, F: 300PF @ 4V, 1MHz; Mounting Type: Surface Mount; Supplier Device Package: Do-214ab, SMC; Package / Case: SMC; Base Product Number: B340; Operating Temperature - Junction: -55°c ~ 150°c;	Shape: DIP; Encapsulation Structure: DIP; Material: Silicon; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 400 V; Continuous Drain (ID) @ 25°c: 10A (Tc); Drive Voltage (Max RDS on, Min RDS on): 10V; RDS on (Max) @ ID, Vgs: 600mohm @ 5A, 10V; Vgs(Th) (Max) @ ID: 5V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 30 Nc @ 10 V; Vgs (Max): ±30V; Input Capacitance (CISS) (Max) @ Vds: 526 PF @ 100 V; Power Dissipation (Max): 147W (Tc); Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Surface Mount; Supplier Device Package: to-220ab; Package / Case: to-220-3;	Function: Switch Transistor; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Spq: 3000 PCS/Reel; Lead Time: 4~6 Weeks;	Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Plastic; Spq: 4000 PCS/Reel; Lead Time: 4~6 Weeks;
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