High Voltage Diode 500kv

US$0.738 / Piece

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What is Surface Mount Ultra Fast Recovery Rectifier Low profile package High forward surge capability fetures applications DO-214AC(SMA) UG1CQ

Name: Surface Mount Ultra Fast Recovery Rectifier Low profile package High forward surge capability fetures applications DO-214AC(SMA) UG1CQ
Uploaded: 2024-01-15T12:47:50+08:00
Description: Surface Mount Ultra Fast Recovery Rectifier Low profile package High forward surge capability fetures applications DO-214AC(SMA) UG1CQ Features - Low profile package - Ideal for automated placement -

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About this Item

Price

Min. Order Reference FOB Price

1000 Pieces US$0.738 / Piece

Sepcifications

Certification RoHS
Function Switch Transistor
Encapsulation Structure DO-214AC(SMA)
Material Silicon
Transport Package Plastic Package
Specification Customized
Trademark YJ
Origin Guangdong, China
Features1 Extremely Low Switching Loss
Features2 Excellent Stability and Uniformity
Features3 100% Avalanche Tested
Features4 Built-in ESD Diode
Application1 Switch Mode Power Supply (SMPS)
Application2 Power Factor Correction (Pfc)
Application3 Uninterruptible Power Supply (UPS)
Application4 AC to DC Converters
Application5 Telecom
Application6 TV Power & LED Lighting Power

Product Description

Surface Mount Ultra Fast Recovery Rectifier Low profile package High forward surge capability fetures applications DO-214AC(SMA) UG1CQ Features - Low profile package - Ideal for automated placement - Glass passivated chip junction - High forward surge capability - Meets MSL level 1, per ...

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Dongguan Merry Electronic Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics, Light Industry & Daily Use, Lights & Lighting
Main Products Diode, Transistor, Mosfet, Bridge, IC, Integrated Circuits, Microcontroller, Schottky Diodes, Super Junction Mosfets, Tvs ESD Protection
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

High Voltage Diode 500kv Comparison

	Quick View Surface Mount Ultra Fast Recovery Rectifier Low profile package High forward surge capability fetures applications DO-214AC(SMA) UG1CQ Contact Now	Irlml6244trpbf N-Channel 20 V 6.3A (Ta) 1.3W (Ta) SMD Micro3 Sot-23 Mosfet Transistor Irlml6244 Contact Now	Hy1906p 60V 120A 188W N Channel to-220fb-3L Mosfet Transistor Hy1906 Hy1904 Hy1908 Contact Now	Smmbta06lt1g Bipolar (BJT) Transistor NPN 80 V 500 Ma 100MHz 225 MW SMD Sot-23-3 Smmbta06lt3g Smmbta06lt Smmbta06 Contact Now	Quick View Sia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor Mosfet Contact Now

Transaction Info
	Quick View Surface Mount Ultra Fast Recovery Rectifier Low profile package High forward surge capability fetures applications DO-214AC(SMA) UG1CQ Contact Now	Irlml6244trpbf N-Channel 20 V 6.3A (Ta) 1.3W (Ta) SMD Micro3 Sot-23 Mosfet Transistor Irlml6244 Contact Now	Hy1906p 60V 120A 188W N Channel to-220fb-3L Mosfet Transistor Hy1906 Hy1904 Hy1908 Contact Now	Smmbta06lt1g Bipolar (BJT) Transistor NPN 80 V 500 Ma 100MHz 225 MW SMD Sot-23-3 Smmbta06lt3g Smmbta06lt Smmbta06 Contact Now	Quick View Sia433edj-T1-Ge3 P-Channel 20-V (D-S) Field-Effect Transistor Mosfet Contact Now
Price	US $ 0.738/ Piece	US $ 0.01-1.00/ Piece	US $ 0.01-1.00/ Piece	US $ 0.01-1.00/ Piece	US $ 0.10-1.09/ Piece
Min Order	1000 Pieces	1 Pieces	1 Pieces	1 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	RoHS	-	-	-	RoHS
Management System Certification	-	GMP	GMP	GMP	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM	OEM	OEM	OEM	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Function: Switch Transistor; Encapsulation Structure: DO-214AC(SMA); Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Shape: SMD; Function: Mosfet; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 20 V; Continuous Drain (ID) @ 25°c: 6.3A (Ta); Drive Voltage (Max RDS on, Min RDS on): 2.5V, 4.5V; RDS on (Max) @ ID, Vgs: 21mohm @ 6.3A, 4.5V; Vgs(Th) (Max) @ ID: 1.1V @ 10µa; Gate Charge (Qg) (Max) @ Vgs: 8.9 Nc @ 4.5 V; Vgs (Max): ±12V; Input Capacitance (CISS) (Max) @ Vds: 700 PF @ 16 V; Power Dissipation (Max): 1.3W (Ta); Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Surface Mount; Supplier Device Package: to-236-3, Sc-59, Sot-23-3; Base Product Number: Irlml6244;	Shape: SMD; Cooling Method: N/a; Function: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 60 V; Continuous Drain Current (ID): 120A; Power Dissipation (Pd): 188W; Drain Source on Resistance (RDS(on)@Vgs,: 7.5mΩ@10V,60A; Gate Threshold Voltage (Vgs(Th)@ID): 4V@250ua; Type: N Channel;	Shape: SMD; Cooling Method: N/a; Function: PNP; Current - Collector (IC) (Max): 500 Ma; Voltage - Collector Emitter Breakdown (M: 80 V; Vce Saturation (Max) @ Ib, IC: 250mv @ 10mA, 100mA; Current - Collector Cutoff (Max): 100na; DC Current Gain (Hfe) (Min) @ IC, Vce: 100 @ 100mA, 1V; Power - Max: 225 MW; Frequency - Transition: 100MHz; Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Surface Mount; Package / Case: to-236-3, Sc-59, Sot-23-3; Supplier Device Package: Sot-23-3 (to-236); Base Product Number: Smmbta06;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Water Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Diffusion; Encapsulation Structure: Chip Transistor; Material: Silicon; Product Number: Sia433edj-T1-Ge3; Description: P-Channel 20 V 12A (Tc) 3.5W (Ta), 19W (Tc); Category: Mosfet; Product: Sia433edj; Technology: Mosfet (Metal Oxide); Mounting Type: Surface Mount;
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