FRED Modules VRRM=600V IFAV=200A Low Forward Voltage High Surge Current Capability fetures applications MF200K06F2 Video

Name: FRED Modules VRRM=600V IFAV=200A Low Forward Voltage High Surge Current Capability fetures applications MF200K06F2
Uploaded: 2024-04-05T15:33:26+08:00
Description: FRED Modules VRRM=600V IFAV=200A Low Forward Voltage High Surge Current Capability fetures applications MF200K06F2 Features - Soft Reverse Recovery Characteristics - Ultrafast Reverse Recovery Time -

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Price

Min. Order Reference FOB Price

1000 Pieces US$3.85 / Piece

Sepcifications

Certification RoHS
Function Switch Transistor
Encapsulation Structure F2
Material Silicon
Transport Package Plastic Package
Specification Customized
Trademark MR
Origin Guangdong, China
Features1 Extremely Low Switching Loss
Features2 Excellent Stability and Uniformity
Features3 100% Avalanche Tested
Features4 Built-in ESD Diode
Application1 Switch Mode Power Supply (SMPS)
Application2 Power Factor Correction (Pfc)
Application3 Uninterruptible Power Supply (UPS)
Application4 AC to DC Converters
Application5 Telecom
Application6 TV Power & LED Lighting Power

Product Description

FRED Modules VRRM=600V IFAV=200A Low Forward Voltage High Surge Current Capability fetures applications MF200K06F2 Features - Soft Reverse Recovery Characteristics - Ultrafast Reverse Recovery Time - Low Reverse Recovery Loss - Low Forward Voltage - High Surge Current Capability - Low ...

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Dongguan Merry Electronic Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics, Light Industry & Daily Use, Lights & Lighting
Main Products Diode, Transistor, Mosfet, Bridge, IC, Integrated Circuits, Microcontroller, Schottky Diodes, Super Junction Mosfets, Tvs ESD Protection
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

High Voltage Diode 500kv Comparison

	Quick View FRED Modules VRRM=600V IFAV=200A Low Forward Voltage High Surge Current Capability fetures applications MF200K06F2 Contact Now	Quick View Original Transistor Irlml5203trpbf 30V 3A 1.25W 98mΩ @10V, 3A P Channel Sot-23 Mosfets RoHS Bom Service Contact Now	Quick View Original Transistor Irlml9303trpbf 30V 2.3A 1.25W 165mΩ @10V, 2.3A P Channel Sot-23 Mosfets RoHS Bom Service Contact Now	Ao4606L Mosfet Array N and P-Channel Transistor Complementary 30V 6A 2W Surface Mount 8-Soic Ao4606L_Delta Ao4614 Ao4606 Contact Now	Quick View Original Transistor Irfz24npbf 55V 17A 45W 70mΩ @10V, 10A N Channel to-220 Mosfets RoHS Bom Service Contact Now

Transaction Info
	Quick View FRED Modules VRRM=600V IFAV=200A Low Forward Voltage High Surge Current Capability fetures applications MF200K06F2 Contact Now	Quick View Original Transistor Irlml5203trpbf 30V 3A 1.25W 98mΩ @10V, 3A P Channel Sot-23 Mosfets RoHS Bom Service Contact Now	Quick View Original Transistor Irlml9303trpbf 30V 2.3A 1.25W 165mΩ @10V, 2.3A P Channel Sot-23 Mosfets RoHS Bom Service Contact Now	Ao4606L Mosfet Array N and P-Channel Transistor Complementary 30V 6A 2W Surface Mount 8-Soic Ao4606L_Delta Ao4614 Ao4606 Contact Now	Quick View Original Transistor Irfz24npbf 55V 17A 45W 70mΩ @10V, 10A N Channel to-220 Mosfets RoHS Bom Service Contact Now
Price	US $ 3.85/ Piece	US $ 0.5/ Piece	US $ 0.5/ Piece	US $ 0.01-1.00/ Piece	US $ 0.5/ Piece
Min Order	1000 Pieces	10 Pieces	10 Pieces	1 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal	T/T, Paypal	T/T, Western Union, Paypal	T/T, Paypal
Quality Control
Product Certification	RoHS	RoHS, CE, ISO	RoHS, CE, ISO	-	RoHS, CE, ISO
Management System Certification	-	ISO 9001	ISO 9001	GMP	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM	-	-	OEM	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	-	-
Product Attributes
Specification	Function: Switch Transistor; Encapsulation Structure: F2; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: SMD; Function: Mosfet; Fet Type: N and P-Channel Complementary; Fet Feature: Standard; Drain to Source Voltage (Vdss): 30V; Continuous Drain (ID) @ 25°c: 6A; RDS on (Max) @ ID, Vgs: 30mohm @ 6A, 10V; Vgs(Th) (Max) @ ID: 2.4V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 6nc @ 10V; Vgs (Max): ±25V; Input Capacitance (CISS) (Max) @ Vds: 310PF @ 15V; Power - Max: 2W; Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Surface Mount; Supplier Device Package: 8-Soic;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;
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