High Voltage Diode 500kv
US$0.22-1.08 / Piece
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What is 650V N-Channel Enhancement Mode Power MOSFET Super Junction structure technology Fetures Applications Silicongear-SJ650N360D2

About this Item
Details
Company Profile

Price

Purchase Qty. Reference FOB Price

1-9 Pieces US$1.08

10-99 Pieces US$0.92

100+ Pieces US$0.22

Sepcifications

  • Certification RoHS, CE, ISO, CCC
  • Function Switch Transistor
  • Structure Planar
  • Encapsulation Structure TO-252
  • Material Silicon
  • Transport Package Plastic Package
  • Specification Customized
  • Trademark Silicongear
  • Origin Guangdong, China
  • Features1 Extremely Low Switching Loss
  • Features2 Excellent Stability and Uniformity
  • Features3 100% Avalanche Tested
  • Features4 Built-in ESD Diode
  • Application1 Switch Mode Power Supply (SMPS)
  • Application2 Power Factor Correction (Pfc)
  • Application3 Uninterruptible Power Supply (UPS)
  • Application4 AC to DC Converters
  • Application5 Telecom
  • Application6 TV Power & LED Lighting Power

Product Description

650V N-Channel Enhancement Mode Power MOSFET Super Junction structure technology Fetures Applications Silicongear-SJ650N360D2 These devices are N-channel power MOSFET developed using Super Junction structure technology. There is high speed switching capacity, low RDSON parameter, excellent quality ...

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High Voltage Diode 500kv Comparison
Transaction Info
Price US $ 0.22-1.08/ Piece US $ 0.0125-0.0258/ Piece US $ 0.0125-0.0258/ Piece US $ 0.0125-0.0258/ Piece US $ 0.0125-0.0258/ Piece
Min Order 1 Pieces 3000 Pieces 3000 Pieces 3000 Pieces 3000 Pieces
Trade Terms - - - - -
Payment Terms L/C, T/T, D/P, Western Union, Paypal, Money Gram T/T, D/P, Western Union, Paypal, Money Gram T/T, D/P, Western Union, Paypal, Money Gram T/T, D/P, Western Union, Paypal, Money Gram T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC
Management System Certification - - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe Domestic Domestic Domestic Domestic
Annual Export Revenue - - - - -
Business Model OEM, ODM - - - -
Average Lead Time Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
- - - -
Product Attributes
Specification
Function: Switch Transistor;
Structure: Planar;
Encapsulation Structure: TO-252;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application2: Power Factor Correction (Pfc);
Application3: Uninterruptible Power Supply (UPS);
Application4: AC to DC Converters;
Application5: Telecom;
Application6: TV Power & LED Lighting Power;
Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Pppm: 600W;
Ifsm(Uni): 100A;
Case: SMB;
Stand-off Voltage: 24V;
Maximum Peak Pulse Current: 15.5A;
Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Pppm: 600W;
Ifsm(Uni): 100A;
Case: SMB;
Stand-off Voltage: 28V;
Maximum Peak Pulse Current: 13.3A;
Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Pppm: 600W;
Ifsm(Uni): 100A;
Case: SMB;
Stand-off Voltage: 30V;
Maximum Peak Pulse Current: 12.4A;
Shape: ST;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Protection;
Working Frequency: No;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Pppm: 600W;
Ifsm(Uni): 100A;
Case: SMB;
Stand-off Voltage: 5V;
Maximum Peak Pulse Current: 63.5A;
Supplier Name

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier