High Voltage Diode 500kv
US$0.18-1.19 / Piece
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What is N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG110G04HHQ

About this Item
Details
Company Profile

Price

Purchase Qty. Reference FOB Price

1-9 Pieces US$1.19

10-99 Pieces US$0.18

100+ Pieces US$0.93

Sepcifications

  • Certification RoHS
  • Function Switch Transistor
  • Encapsulation Structure PDFN5060-8L
  • Material Silicon
  • Transport Package Plastic Package
  • Specification Customized
  • Trademark YJ
  • Origin Guangdong, China
  • Features1 Extremely Low Switching Loss
  • Features2 Excellent Stability and Uniformity
  • Features3 100% Avalanche Tested
  • Features4 Built-in ESD Diode
  • Application1 Switch Mode Power Supply (SMPS)
  • Application2 Power Factor Correction (Pfc)
  • Application3 Uninterruptible Power Supply (UPS)
  • Application4 AC to DC Converters
  • Application5 Telecom
  • Application6 TV Power & LED Lighting Power

Product Description

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG110G04HHQ Product Summary - VDS 40V - ID 110A - RDS(ON)( at VGS=10V) <1.9mΩ - 100% EAS ...

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High Voltage Diode 500kv Comparison
Transaction Info
Price US $ 0.18-1.19/ Piece US $ 0.74/ Piece US $ 30.00-33.00/ Piece US $ 0.10-0.17/ Piece US $ 0.50-3.00/ Piece
Min Order 1 Pieces 10 Pieces 5 Pieces 10 Pieces 10 Pieces
Trade Terms - - - - -
Payment Terms L/C, T/T, D/P, Western Union, Paypal, Money Gram L/C, T/T, D/P, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification RoHS - - RoHS RoHS
Management System Certification - - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe South America, Europe, Southeast Asia/ Mideast, Others South America, Europe, Southeast Asia/ Mideast, Others South America, Europe, Southeast Asia/ Mideast, Others South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue - - - - -
Business Model OEM, ODM - - - -
Average Lead Time Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Product Attributes
Specification
Function: Switch Transistor;
Encapsulation Structure: PDFN5060-8L;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application2: Power Factor Correction (Pfc);
Application3: Uninterruptible Power Supply (UPS);
Application4: AC to DC Converters;
Application5: Telecom;
Application6: TV Power & LED Lighting Power;
Function: Microwave Transistor, Switch Transistor;
Material: Silicon;
Brand Name: Original;
Lead Free Status: RoHS Compliant;
Condition: Brand Newand Original;
Package Method: SMD Transistor;
Mounting Type: Surface Mount;
Package Outline: Cer-DIP / Ceramic DIP;
Encapsulation Structure: Chip Transistor;
Material: Silicon;
Product: Fsbs15CH60f;
Product Type: IGBT;
Power Supply Voltage: 600V;
Functional Description: Motor / Motion / Ignition;
Detailed Description: Power Driver Module IGBT 3 Phase 600 V 15 a;
Shape: ST;
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor;
Product Number: Ao4407A;
Detailed Description: P-Channel 30 V 12A (Ta) 3.1W (Ta) Surface Mount;
Technology: Mosfet (Metal Oxide);
Base Product Number: Ao4407;
Shape: ST;
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor;
Encapsulation Structure: Cer-DIP/Ceramic Inline;
Power Level: Enhanced;
Material: Germanium;
Product Number: Irgp4066dpbf;
Detailed Description: IGBT Trench 600 V 140 a 454 W Through Hole to-247A;
Category: Transistor IGBT;
Voltage - Collector Emitter Breakdown: 600 V;
Base Product Number: Irgp4066;
Supplier Name

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier